Si2333CDS Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 Qg (Typ.) APPLICATIONS RoHS COMPLIANT • Load Switch • PA Switch 9 nC TO-236 (SOT-23) G 1 3 S D 2 Top View Si2333CDS (O3)* * Marking Code Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Limit - 12 ±8 - 7.1 - 5.7 ID - 5.1b, c - 4.0b, c - 20 - 1.0 IDM Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation IS - 0.63b, c 2.5 1.6 PD 1.25b, c 0.8b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit V A W °C THERMAL RESISTANCE RATINGS Parameter b, d ≤5s Steady State Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W. Document Number: 68717 S-81445-Rev. A, 23-Jun-08 Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W www.vishay.com 1 Si2333CDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient V - 13 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2.6 - 0.4 - 20 µA A VGS = - 4.5 V, ID = - 5.1 A 0.0285 0.035 VGS = - 2.5 V, ID = - 4.5 A 0.036 0.045 VGS = - 1.8 V, ID = - 2.0 A 0.046 0.059 VDS = - 5 V, ID = - 1.9 A 1.6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 1225 VDS = - 6 V, VGS = 0 V, f = 1 MHz tr Rise Time td(off) Turn-Off Delay Time 15 25 9 15 VDS = - 6 V, VGS = - 2.5 V, ID = - 5.1 A 1.9 f = 1 MHz 4.0 nC 3.8 13 VDD = - 6 V, RL = 6 Ω ID = - 1 A, VGEN = - 4.5 V, RG = 1 Ω tf Fall Time pF 260 VDS = - 6 V, VGS = - 4.5 V, ID = - 5.1 A td(on) Turn-On Delay Time 315 Ω 20 35 60 45 70 12 20 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C - 1.0 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 20 IS = - 1.0 A IF = - 1.0 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.7 - 1.2 V 32 50 ns 20 40 nC 16 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68717 S-81445-Rev. A, 23-Jun-08 Si2333CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 2.0 VGS = 5 thru 2.5 V 15 I D - Drain Current (A) I D - Drain Current (A) VGS = 2 V 10 VGS = 1.5 V 5 1.5 TC = 25 °C 1.0 0.5 TC = 125 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 TC = - 55 °C 0.0 0.0 2.0 0.3 VDS - Drain-to-Source Voltage (V) 1.2 1.5 Transfer Characteristics 2400 0.10 0.08 C - Capacitance (pF) 1800 0.06 VGS = 1.8 V VGS = 2.5 V 0.04 Ciss 1200 600 VGS = 4.5 V 0.02 Coss Crss 0.00 0 0 5 10 15 0 20 3 ID - Drain Current (A) 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 8 1.6 ID = 5.1 A ID = 5.1 A VDS = 3 V VDS = 6 V 4 VDS = 9 V 2 (Normalized) 1.4 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 0.9 VGS - Gate-to-Source Voltage (V) Output Characteristics R DS(on) - On-Resistance (Ω) 0.6 VGS = 2.5 V 1.2 VGS = 4.5 V 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 68717 S-81445-Rev. A, 23-Jun-08 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2333CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.14 100 ID = 5.1 A 0.12 I S - Source Current (A) 1 R DS(on) - On-Resistance (Ω) TJ = 150 °C 10 TJ = 25 °C 0.1 TJ = - 55 °C 0.01 0.10 0.08 0.06 TJ = 125 °C 0.04 0.02 0.001 0.0 TJ = 25 °C 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10 0.4 0.3 8 ID = 250 µA 0.2 Power (W) VGS(th) Variance (V) 2 ID = 1 mA 0.1 6 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.01 150 TA = 25 °C 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 s, 10 s 100 s, DC BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 68717 S-81445-Rev. A, 23-Jun-08 Si2333CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68717. Document Number: 68717 S-81445-Rev. A, 23-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1