BDS16 BDS16SMD BDS17 BDS17SMD MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 1 0 .6 3.6 Dia. 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • • • • • 1.0 2 .5 4 BSC 2. 70 BSC 3 APPLICATIONS 2 Pin 1 – Base • POWER LINEAR AND SWITCHING APPLICATIONS • GENERAL PURPOSE POWER 9 .6 9 .3 1 1 .5 1 1 .2 TO220M SMD1 3 .6 0 (0 .1 4 2 ) M a x . 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVELS FULLY ISOLATED (METAL VERSION) 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) - TO220 Metal Package - Isolated - Ceramic Surface Mount Package Pin 2 – Collector Pin 3 – Emitter ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated) VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Semelab plc. Collector - Base voltage (IE = 0) Collector - Emitter voltage (IB = 0) Emitter - Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk BDS16 120V 120V BDS17 150V 150V 5V 8A 2A 50W –65 TO 200°C 200°C Prelim. 7/00 BDS16 BDS16SMD BDS17 BDS17SMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO ICEO IEBO VCEO(sus)* Test Conditions Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Collector - Emitter sustaining voltage (IB = 0) VBE(on)* Collector - Emitter saturation voltage Base - Emitter voltage hFE* DC Current gain fT Transition frequency VCE(sat)* BDS16 BDS17 BDS16 BDS17 Min. Typ. Max. Unit 20 20 0.1 0.1 mA VCB = 120V VCB = 150V VCE = 60V VCE = 75V VEB = 5V mA mA 10 BDS16 BDS17 IC = 100mA 120 IC = 1A IB = 0.1A 0.5 IC = 1A IC = 0.5A IC = 4A IC = 0.5A VCE = 2V VCE = 2V VCE = 2V VCE = 10V 1.0 250 150 V 150 40 15 30 V V V MHz *Pulsed : Pulse duration = 300 ms , duty cycle = 1.5% SWITCHING CHARACTERISTICS Parameter ton On Time ts tf Storage Time Fall Time Test Conditions (td + tr) IC = 2A VCC = 80V IB1 = 0.2A IC = 2A VCC = 80V IB1 = –IB2 = 0.2A Max. Unit 0.5 ms 3.0 0.4 ms ms THERMAL DATA RTHj-case Thermal resistance junction - case Max. 2.5°C/W RTHj-a Thermal resistance junction - ambient Max. 62.5°C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00