SUD25N15-52 Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS D Primary Side Switch TO-252 D Drain Connected to Tab G D G S Top View S Ordering Information: N-Channel MOSFET SUD25N15-52 SUD25N15-52—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current 14.5 50 Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range V 25 ID IDM Repetitive Avalanche Energy (Duty Cycle v 1%) Unit EAR A 31 mJ 136b PD W 3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case (Drain) Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. Document Number: 71768 S-40272—Rev. C, 23-Feb-04 www.vishay.com 1 SUD25N15-52 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 150 V, VGS = 0 V 1 VDS = 150 V, VGS = 0 V, TJ = 125_C 50 VDS = 150 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V 50 VGS = 10 V, ID = 5 A Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb rDS(on) DS( ) gfs 4 V nA mA m A 0.042 0.052 VGS = 10 V, ID = 5 A, TJ = 125_C 0.109 VGS = 10 V, ID = 5 A, TJ = 175_C 0.145 VGS = 6 V, ID = 5 A 0.047 VDS = 15 V, ID = 25 A 40 W 0.060 S Dynamica Input Capacitance Ciss 1725 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 100 Total Gate Chargec Qg 33 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 216 pF 40 9 VDS = 75 V,, VGS = 10 V,, ID = 25 A nC 12 1 3 td(on) 15 25 tr 70 100 25 40 60 40 td(off) VDD = 50 V, RL = 3 W ID ^ 25 A, VGEN = 10 V, Rg = 2.5 W tf W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 25 A, VGS = 0 V 0.9 1.5 V trr IF = 25 A, di/dt = 100 A/ms 95 140 ns Source-Drain Reverse Recovery Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71768 S-40272—Rev. C, 23-Feb-04 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 6V VGS = 10 thru 7 V 40 I D − Drain Current (A) I D − Drain Current (A) 40 30 20 5V 10 30 TC = 125_C 20 25_C 10 −55_C 4V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 2 Transconductance 4 5 6 7 On-Resistance vs. Drain Current 0.10 TC = −55_C 25_C 40 r DS(on)− On-Resistance ( W ) 50 125_C 30 20 10 0 0.08 VGS = 6 V 0.06 0.04 VGS = 10 V 0.02 0.00 0 10 20 30 40 50 0 10 20 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) Ciss 1500 1000 Crss 40 50 Gate Charge 20 2000 500 30 ID − Drain Current (A) Capacitance 2500 C − Capacitance (pF) 3 VGS − Gate-to-Source Voltage (V) 60 g fs − Transconductance (S) 1 Coss 0 VDS = 75 V ID = 25 A 16 12 8 4 0 0 30 60 90 120 VDS − Drain-to-Source Voltage (V) Document Number: 71768 S-40272—Rev. C, 23-Feb-04 150 0 10 20 30 40 50 60 Qg − Total Gate Charge (nC) www.vishay.com 3 SUD25N15-52 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3.0 100 VGS = 10 V ID = 5 A I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.5 2.0 1.5 1.0 TJ = 150_C 10 TJ = 25_C 0.5 0.0 −50 −25 0 25 50 75 100 125 150 1 175 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 30 I D − Drain Current (A) 100 ms 20 15 10 10 1 ms 10 ms 1 100 ms 1 s, dc TC = 25_C Single Pulse 5 0 0 25 50 75 100 125 150 0.1 175 0.1 1 10 100 1000 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance 10 ms Limited by rDS(on) 25 I D − Drain Current (A) Safe Operating Area 100 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71768 S-40272—Rev. C, 23-Feb-04