SEME BUL62A LAB MECHANICAL DATA Dimensions in mm (inches) 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in electronic ballast applications 5.97 (0.235) 6.22 (0.245) 1 2 3 • • • • 0.76 (0.030) 1.14 (0.045) 8.89 (0.350) 9.78 (0.385) 0.64 (0.025) 0.89 (0.035) 2.31 (0.091) Typ. 2.31 (0.091) Typ. 4.60 (0.181) Typ. 0.46 (0.018) 0.61 (0.024) 1.04 (0.041) 1.14 (0.045) I–PAK (TO–251) Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. • Ion implant and high accuracy masking for tight control of characteristics from batch to batch. • Triple Guard Rings for improved control of high voltages. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 1000V VCEO Collector – Emitter Voltage (IB = 0) 500V VEBO Emitter – Base Voltage (IC = 0) 10V IC Continuous Collector Current 6A IC(PK) Peak Collector Current 10A IB Base Current 2.5A Ptot Total Dissipation at Tcase = 25°C 25W Tstg Operating and Storage Temperature Range Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. –55 to +150°C Prelim. 3/95 SEME BUL62A LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. VCEO(sus) ELECTRICAL CHARACTERISTICS Collector – Emitter Sustaining Voltage IC = 10mA 500 V(BR)CBO Collector – Base Breakdown Voltage IC = 1mA 1000 V(BR)EBO Emitter – Base Breakdown Voltage IE = 1mA 10 ICBO Collector – Base Cut–Off Current ICEO Collector – Emitter Cut–Off Current IEBO Emitter Cut–Off Current hFE* DC Current Gain Typ. Unit V VCB = 1000V IB = 0 Max. 10 TC = 125°C 100 VCE = 500V 100 VEB = 9V 10 IC = 0 TC = 125°C 100 IC = 0.1A VCE = 5V 18 20 IC = 1A VCE = 5V 12 15 IC = 2.5A VCE = 1V 5 9 µA µA µA — TC = 125°C IB = 20mA 0.05 0.1 IB = 0.2A 0.1 0.3 IC = 2.5A IB = 0.5A 0.4 0.8 IC = 1A IB = 0.2A 0.8 1.0 IC = 2.5A IB = 0.5A 0.9 1.2 IC = 100mA VCE(sat)* Collector – Emitter Saturation Voltage IC = 1A V VBE(sat)* Base – Emitter Saturation Voltage V ft DYNAMIC CHARACTERISTICS Transition Frequency IC = 0.2A VCE = 4V 20 MHz Cob Output Capacitance VCB = 20V f = 1MHz 45 pF * Pulse test tp = 300µs , δ < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 SEME BUL62A LAB Collector-Emitter Saturation Voltage DC Current Gain Forward Bias Safe Operating Area Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/95 SEME BUL62A LAB DC Current Gain Base-Emitter Saturation Voltage Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Prelim. 3/95