BUX82 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 3 (case) Applications 3.84 (0.151) 4.09 (0.161) The BUX82 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. 7.92 (0.312) 12.70 (0.50) TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. This device is especially suitable for switching–control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.Other recommended applications include DC–RF amplifiers and power oscillators. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCESM Collector – Emitter Voltage VCER Collector – Emitter Voltage VCEO Collector – Emitter Voltage(open base) IC Collector Current (d.c) ICM Peak Collector Current IB Base Current (d.c) Ptot Total Power Dissipation Tmb = 50°C TSTG Storage Temperature Range TJ Maximum Junction Temperature Semelab plc. VBE = 0 RBE = 100W 800V 500V 400V 6A tp = 2ms Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 8A 2A 60W -65 to +150°C +150°C Prelim.9/99 BUX82 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter VCEOsust VCERsust VCE(sat) IC = 100mA Voltage L = 25mH Collector - Emitter Sustaining IC = 100mA Voltage L = 15mH IB = 0 RBE = 100W Min. Typ. Base – Emitter V 500 V 1.5 IC = 2.5A IB = 0.5A 1.4 Saturation Voltage VCE(sat) VBE(sat)* V Collector – Emitter Saturation Voltage Base – Emitter Max. Unit 400 Collector – Emitter Saturation Voltage VBE(sat)* Test Conditions Collector - Emitter Sustaining 3 IC = 4A IB = 1.25A 1.6 Saturation Voltage IEBO Emitter Cut-off Current IC = 0 VEB = 10V 10 mA ICES Collector Cut-off Current VCESMmax VBE = 0 1 mA hFE DC Current Gain IC = 0.6A VCE = 5V 30 — fT Transition Frequency IC = 0.2A VCE = 10V 6 MHz ton Turn–On Time IC ON = 2.5A VCC = 250V 0.3 0.5 ts Storage Time IB1 = 0.5A IB2 = 1A 2 3.5 tf Fall Time ms 0.3 THERMAL CHARACTERISTICS Rth j-mb Thermal Resistance Junction to Case Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 1.65 °C/W Prelim. 3/94