TetraFET D2053UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 R 3 6 F 5 A 4 Q O N M J K GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL L I FEATURES P H G • SIMPLIFIED AMPLIFIER DESIGN DBC4 Package • SUITABLE FOR BROAD BAND APPLICATIONS PIN 1 Source (Common) PIN 5 Source (Common) PIN 2 Drain 1 PIN 6 Gate 2 • VERY LOW Crss PIN 3 Drain 2 PIN 7 Gate 1 • SIMPLE BIAS CIRCUITS PIN 4 Source (Common) PIN 8 Source (Common) DIM A B C D E F G H I J K L M N O P Q R mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13 0.25 Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max 0.07 Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 0.010 Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max .003 • LOW NOISE • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 15W 65V ±20V 1A –65 to 150°C 200°C Prelim. 9/00 D2053UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current V VGS = 0 ID = 10mA VDS = 28V VGS = 0 1 mA 1 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 0.2A 65 1 0.18 S 13 dB 40 % 20:1 — TOTAL DEVICE Common Source Power Gain h PO = 5W Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 1GHz GPS IDQ = 0.2A PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 12 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 6 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 0.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 12°C / W Prelim. 9/00