TetraFET D2089UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W – 28V – 2GHz SINGLE ENDED H 4 B 3 1 G (2 pls) D 2 FEATURES F C (2 p ls) • SIMPLIFIED AMPLIFIER DESIGN E A PIN 1 SOURCE PIN 2 GATE PIN 3 SOURCE PIN 4 DRAIN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS DIM A B C D E F G H Millimetres 25.40 45° 0.76 5.21 DIA 1.02 0.13 3.18 3.18 Tol. 0.25 5° 0.05 0.13 0.13 0.02 0.13 REF Inches 1.00 45° 0.030 0.205 0.040 0.005 0.125 0.125 Tol. 0.010 5° 0.002 0.005 0.005 0.001 0.005 REF • LOW NOISE • HIGH GAIN APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from DC to 2 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 4W 65V ±20V 1A –65 to 150°C 200°C Prelim. 5/96 D2089UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit VGS = 0 |D = 10mA VDS = 28V VGS = 0 1 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.2A Pout Power Output VDS = 28V IDQ = 75mA f = 30MHz Pin = 5mW Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current * Pulse Test: VDS = 0V VGS = –5V f = 1MHz VDS = 28V VGS = 0 f = 1MHz 65 1 V 0.18 mhos 750 mW 12 6 pF 0.5 Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 30°C / W Prelim. 5/96