TetraFET D2204UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 900MHz SINGLE ENDED C D (2 pls) E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1 SOURCE (COMMON) PIN 2 GATE PIN 3 SOURCE (COMMON) PIN 4 SOURCE (COMMON) PIN 5 DRAIN DIM A B C D E F G H I J K M N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 70W 40V ±20V 16A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3038 Issue 1 D2204UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 8 mA VGS = 20V VDS = 0 8 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 7 V gfs Forward Transconductance* VDS = 10V ID = 1.6A 1.44 S GPS Common Source Power Gain PO = 20W 10 dB η Drain Efficiency VDS = 12.5V 40 % VSWR Load Mismatch Tolerance f = 900MHz 20:1 — IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 1.6A Ciss Input Capacitance VDS = 0 Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: 40 VGS = –5V f = 1MHz 96 pF f = 1MHz 80 pF f = 1MHz 8 pF Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 2.5°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3038 Issue 1