SEME-LAB IRF230

IRF230
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
1
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFET
6.35 (0.25)
9.15 (0.36)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Gate
Pin 2 – Source
Case – Drain
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDS
Drain – Source Voltage1
200
V
VDGR
Drain - Gate Voltage (RGS = 20KW)1
200
V
ID
9.0
A
ID
Continuous Drain [email protected] Tcase = 25°C
Continuous Drain [email protected] Tcase = 100°C
6.0
A
IDM
Pulsed Drain Current 3
36
A
VGS
Gate – Source Voltage
±20
V
PD
Maximum Power Dissipation @ Tcase = 25°C
Derate Linearly
75
W
0.6
W/°C
ILM
Inductive Current Clamped
36
A
EAS*
Single Pulse Avalanche energy Rating
150
mj
TJ , TSTG
TL
Operating and Storage Junction Temperature Range
–55 to 150
°C
300
°C
4
Lead Temperature : 0.063” from Case for 10 Sec.
THERMAL CHARACTERISTICS
Characteristic
RqJC
Junction to Case
RqCS
Case to Sink (Mounting Surface flat, smooth and greased.
RqJA
Junction to Ambient (Free air operation)
Min.
Typ.
Max. Unit
1.67
0.1
°C/W
30
NOTES
1 TJ = +25°C to + 150°C
2 Pulse Test PUlse Width # 300ms. Duty Cycle # 2%
3 Repetitive Ration Pulse Width Limited by Maximum Junction Temperature.
4 VDD = 20V starting TJ = +25°C , L = 3.37mH, RGS = 50W, IPEAK = 9A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 6/00
IRF230
ELECTRICAL (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain–Source Breakdown Voltage
VGS(TH) Gate Threshold Voltage
VGS = 0V , ID = 250mA
VDS = VGS , ID = 250mA
200
V
2
4
V
IGSS
Gate Source Leakage forward
VGS = 20V
100
IGSS
Gate Source Leakage Reverse
VGS = -20V
-100
VDS = Max rating
IDSS
Zero Gate Voltage Drain Current
VGS=0V
VGS = 10V
rDS(ON)2 Static Drain–Source On State Resistance VGS = 10V ,
Forward Transconductance
gts2
VDS> 50V
1000
TJ = +125°C
VDS> ID(ON) xrDS(ON) Max.
ID(ON)2 On-State Drain Current
250
VDS = Max rating x0.8,
VGS=0V
9
IDS = 5.0A
ID =5.0A
nA
A
0.25
3.0
mA
0.4
4.8
W
S(W)
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(ON)
Turn–On Delay Time
tr
Rise Time
VDD•100V,
td(OFF)
Turn-off Delay Time
RG = 7.5W
tf
Fall Time
VGS = 0V,
VDS = 25V
f = 1MHz
VGS = 10V
600
250
pF
80
ID = 9A
VDS = 0.8 VMax
19
30
10
nC
9.0
35
ID = 5.0A,
80
ns
60
40
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current (Body Diode) Modified MOSFET
9.0
symbol showing the integral
ISM
Pulsed Source Current1 (Body Diode)
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
tON
Forward Turn-on Time
A
reverse P-N junc. rectifier.
TJ = +25°C ,
36
IS = 9A
2.0
VGS = 0V
TJ = +150°C ,
IS = 9A
VGS = 0V dlF/dt = 100A/ms
TJ = +150°C ,
IS = 9A
VGS = 0V dlF/dt = 100A/ms
V
450
ns
3.0
mC
NEGLIGIBLE
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance
LS
Internal Source Inductance
Semelab plc.
5.0
(from 6mm down source lead to source bond pad)
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
12.5
nH
Prelim. 6/00