IRF250 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on) 200V 30A Ω 0.085Ω FEATURES • HERMETICALLY SEALED TO–3 METAL PACKAGE 7.87 (0.310) 6.99 (0.275) 12.07 (0.475) 11.30 (0.445) 1.78 (0.070) 1.52 (0.060) 20.32 (0.800) 18.80 (0.740) dia. 1.57 (0.062) 1.47 (0.058) dia. 2 plcs. • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 30A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 19A 1 IDM Pulsed Drain Current PD Power Dissipation @ Tcase = 25°C 120A Linear Derating Factor EAS IAR 1.2W/°C Single Pulse Avalanche Energy 2 Avalanche Current 150W 2 200mJ 30A 2 EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature 1.6mm (0.63”) from case for 10 sec. 15mJ 5V/ns –55 to +150°C 300°C Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%. 2) @ VDD = 50V , L ≥ 330mH , RG = 25Ω , Peak IL = 30A , Starting TJ = 25°C. 3) @ ISD ≤ 30A , di/dt ≤ 190A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96 IRF250 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance 1 IDSS Zero Gate Voltage Drain Current IGSS IGSS Forward Gate – Source Leakage Reverse Gate – Source Leakage Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA Reference to 25°C ID = 1mA VGS = 10V ID = 19A VGS = 10V ID = 30A VDS = VGS ID = 250mA VDS > 15V ID = 19A VGS = 0 VDS = 0.8BVDSS TJ = 125°C VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 30A VDS = 0.5BVDSS trr Qrr ton LD LS PACKAGE CHARACTERISTICS Internal Drain Inductance (measured from 6mm down drain lead to centre of die) Internal Source Inductance (from 6mm down source lead to source bond pad) RθJC RθCS RθJA THERMAL CHARACTERISTICS Thermal Resistance Junction – Case Thermal Resistance Case – Sink Thermal Resistance Junction – Ambient VSD Typ. Max. Unit V 200 V/°C 0.029 0.085 0.090 4 2 9 25 250 100 –100 3500 700 110 55 8 30 Ω V S (É) µA nA pF 115 22 60 35 190 170 130 VDD = 100V ID = 30A RG = 2.35Ω SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current 2 IS = 30A TJ = 25°C Diode Forward Voltage 1 VGS = 0 Reverse Recovery Time IF = 30A TJ = 25°C Reverse Recovery Charge 1 di / dt ≤ 100A/µs VDD ≤ 50V Forward Turn–On Time IS ISM Min. nC ns 30 120 A 1.9 V 950 9.0 ns µC Negligible 5.0 13 nH 0.83 °C/W 0.12 30 Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 9/96