IRFM5210 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) P–CHANNEL MOSFET IN A TO254 FOR HIGH RELIABILITY APPLICATIONS. 1 2 VDSS ID RDS(on) 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC FEATURES • FAST SWITCHING TO-254AA Pin 1 –Drain 100V 34A Ω 0.07Ω Pin 2 – Source • SCREENING OPTIONS AVAILABLE Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS EAR TJ , Tstg RθJC Gate – Source Voltage Continuous Drain Current (Tcase = 25°C) Continuous Drain Current (Tcase = 100°C) 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 2 Repetitive Avalanche Energy 1 Operating Junction and Storage Temperature Range Junction – Case Thermal Resistance ±20V -34A -21A -136A 125W 1.0W/°C 520mJ 12mJ –55 to +150°C 1.0W/°C Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) VDD = –25V , L = 3.5mH , RG = 25Ω , IAS = –21A , Starting TJ = 25°C, VGS = –10V Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2612 Issue 1 IRFM5210 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS V(BR)DSS Drain – Source Breakdown Voltage VGS = 0V ID = –250µA RDS(on) Static Drain to Source On Resistance 2 VGS = –10V ID = –21A VGS(th) Gate Threshold Voltage VDS = VGS ID = –250µA gfs Forward Transconductance VDS = –15V ID = –21A VDS = –100V VGS = 0V VDS = –80V VGS = 0V IDSS Drain to Source Leakage Current V –100 – 2.0 0.07 Ω –4.0 V S 10 –25 –250 TJ = 125°C IGSS Gate to Source Forward Leakage VGS = –20V –100 IGSS Gate to Source Reverse Leakage VGS = 20V 100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V 2700 Coss Output Capacitance VDS = –25V 790 Crss Reverse Transfer Capacitance f = 1MHz 450 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time VDD = –50V 17 28 tr Rise Time ID = –21A 86 150 td(off) Turn–Off Delay Time RG = 2.5Ω 79 100 tf Fall Time RG = 2.4Ω SOURCE – DRAIN CHARACTERISTICS 81 120 pF 180 ID = –21A VDS = –80V 25 VGS = –10V nC 97 VGS = –10V ns 100 D IS Continuous Source Current ISM Pulse Source Current 1 integral reverse p-n junction VSD Diode Forward Voltage 2 TJ = 25°C, IS = 21A, VGS = 0V trr Reverse Recovery Time 2 di / dt ≤ –100A/µs Qrr Reverse Recovery Charge 2 TJ = 25°C, IF = -21A ton Forward Turn–On Time –34 MOSFET symbol showing the G –136 S –1.6 V 170 260 ns 1.2 1.8 µC negligible — 5.0 PACKAGE CHARACTERISTICS A 17 LD Internal Drain Between lead, 6mm(0.25in.) from 4.5 LS Internal Source Inductance package and center of die contact 7.5 nH Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) Pulse Test: Pulse Width ≤ 300ms, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2612 Issue 1