IRFN130SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1 3 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) VDSS ID(cont) RDS(on) 100V 11A 0.19W FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS SMD1 Pad 1 – Source Pad 2 – Drain Pad 3 – Gate • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE * Also available as IRF130SM with Pin1(Source) and Pin3 (Gate) reversed. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 11A ID Continuous Drain Current @ Tcase = 100°C 7A IDM Pulsed Drain Current 44A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RqJC Thermal Resistance Junction to Case 2.8°C/W max. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Prelim. 7/00 IRFN130SMD ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25°C V 0.1 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 7A 0.19 Resistance VGS = 10V ID = 11A 0.22 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 7A 3 VGS = 0 VGS(th) Gate Threshold Voltage V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 650 Coss Output Capacitance VDS = 25V 240 Crss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 11 ISM Pulse Source Current 43 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 11A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 11A nA pF 12.8 28.5 ID = 11A 1.0 6.3 VDS = 0.5BVDSS 3.8 16.6 VDS = 0.5BVDSS nC nC 30 VDD = 50V 75 ID = 11A ns 40 RG = 7.5W IS = 11A W 4 gfs VGS = 10V Unit 45 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk A 1.5 V 300 ns 3 mC nH Prelim. 7/00