IRFY044 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 60V 20A Ω 0.035Ω FEATURES 0.89 1.14 2.54 BSC 2.65 2.75 • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ TC = 25°C 20A ID Continuous Drain Current @ TC = 100°C 20A IDM Pulsed Drain Current 128A PD Power Dissipation @ TC = 25°C 60W Linear Derating Factor 0.48W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RθJC Thermal Resistance Junction to Case 2.1°C/W max. RθJA Thermal Resistance Junction to Ambient 80°C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 11/95 IRFY044 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) Breakdown Voltage Static Drain – Source On–State Resistance VGS(th) Gate Threshold Voltage Test Conditions VGS = 0 ID = 1mA Min. Typ. Max. 60 Reference to 25°C V 0.68 ID = 1mA V / °C 0.035 Ω 4 V (Ω) S(Ω VGS = 10V ID = 20A VDS = VGS ID = 250µA 2 VDS ≥ 15V ID = 20A 17 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 2400 Coss Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1MHz 230 Qg Total Gate Charge VGS = 10V 39 88 Qgs Gate – Source Charge ID = 20A 6.7 15 Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 18 52 td(on) Turn–On Delay Time VGS = 10V 23 tr Rise Time VDD = 30V 130 td(off) Turn–Off Delay Time ID = 20A 81 tf Fall Time RG = 9.1Ω 79 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 20 ISM Pulse Source Current 128 VSD Diode Forward Voltage trr Reverse Recovery Time IF = 20A Qrr Reverse Recovery Charge di / dt ≤ 100A/µs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance (from 6mm down drain lead pad to centre of die) 8.7 LS Internal Source Inductance (from 6mm down source lead to centre of source bond pad) 8.7 Semelab plc. IS = 20A TJ = 25°C VGS = 0 TJ = 25°C Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Unit µA nA pF nC ns A 2.5 V 220 ns 1.6 µC nH Prelim. 11/95