IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 12.70 19.05 1 2 3 0.89 1.14 2.54 BSC 2.65 2.75 • SIMPLE DRIVE REQUIREMENTS IRFY430 • LIGHTWEIGHT Pin 2 – Drain Pin 3 – Source Pin 2 – Source Pin 3 – Gate IRFY430M Pin 1 – Drain FEATURES • HERMETICALLY SEALED TO–220 METAL PACKAGE TO–220M – Metal Package Pin 1 – Gate 500V 3.7A 1.6W • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) 3.7A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 2.4A IDM Pulsed Drain Current 1 14A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC Thermal Resistance Junction to Case 0.36W/°C –55 to 150°C 300°C 1.67°C/W max. Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99 IRFY430M IRFY430M ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) ID = 1mA VGS(th) Gate Threshold Voltage 1 Max. V / °C VGS = 10V ID = 2.4A 1.6 VGS = 10V ID = 3.7A 1.84 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 2.4A 1.5 VGS = 0 V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 610 Coss Output Capacitance VDS = 25V 135 Crss Reverse Transfer Capacitance f = 1MHz 65 Qg Total Gate Charge 1 Qgs Gate – Source Charge 1 ID =3.7A VDS = 0.5BVDSS VGS = 10V 1 ID = 3.7A VDS = 0.5BVDSS 19.8 29.5 2.2 4.6 5.5 19.7 Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time VDD = 250V 35 tr Rise Time ID =3.7A 30 td(off) Turn–Off Delay Time RG = 7.5W 55 tf Fall Time VGS = 10V 30 IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 3.7 2 ISM Pulse Source Current VSD Diode Forward Voltage trr Reverse Recovery Time IS = 3.7A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (6mm down drain lead to centre of die) 8.7 LS Internal Source Inductance (6mm down source lead to centre of source bond pad) 8.7 VGS = 0 TJ = 25°C nC nC ns 14 TC = 25°C nA pF Qgd IS = 3.7A W 4 gfs VGS = 10V Unit V 0.78 ID = 1mA 1 Typ. 500 Reference to 25°C Static Drain – Source On–State Resistance VGS = 0 Min. A 1.4 V 900 ns 7.0 mC Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 6/99