SML10S75 D3PAK Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4.98 (0.196) 5.08 (0.200) 15.95 (0.628) 16.05 (0.632) 1.47 (0.058) 1.57 (0.062) 13.41 (0.528) 13.51 (0.532) 1.04 (0.041) 1.15 (0.045) 11.51 (0.453) 11.61 (0.457) 13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 2.67 (0.105) 2.84 (0.112) 1 2 3 VDSS 100V 75A ID(cont) RDS(on) 0.025W 1.27 (0.050) 1.40 (0.055) 1.22 (0.048) 1.32 (0.052) 3.81 (0.150) 4.06 (0.160) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs. Pin 1 – Gate Pin 2 – Drain Pin 3 – Source Heatsink is Drain. • • • • Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 100 V ID Continuous Drain Current 75 A IDM Pulsed Drain Current 1 300 A VGS Gate – Source Voltage ±20 VGSM Gate – Source Voltage Transient ±30 Total Power Dissipation @ Tcase = 25°C 300 W Derate Linearly 2.4 W/°C PD –55 to 150 TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 75 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 1500 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 0.53mH, RG = 25W, Peak IL = 75A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 5/99 SML10S75 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250mA Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 100 Typ. 2 Max. Unit V 75 mA A VGS = 10V , ID = 0.5 ID [Cont.] 0.025 W DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Min. Coss Output Capacitance VDS = 25V 1650 Crss Reverse Transfer Capacitance f = 1MHz 630 Qg Total Gate Charge3 VGS = 10V 155 Qgs Gate – Source Charge VDD = 0.5 VDSS 25 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 80 td(on) Turn–on Delay Time VGS = 15V 13 tr Rise Time VDD = 0.5 VDSS 22 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 43 tf Fall Time RG = 1.6W Typ. 4150 Max. Unit pF nC ns 9 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. Typ. Max. Unit 75 A 300 1.3 IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms V 160 ns 1.1 mC THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 0.42 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 5/99