SML20T75 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 5.38 (0.212) 6.20 (0.244) 4.50 (0.177) MAX 2 2 VDSS 200V 100A ID(cont) RDS(on) 0.022W 3 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) 2.13 (0.084) 1.01 (0.040) 1.40 (0.055) 5.45 (0.215) BSC 2plcs 2.21 (0.087) 2.59 (0.102) Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D • • • • Faster Switching Lower Leakage 100% Avalanche Tested New T247clip Package (Clip–mounted TO–247 Package) StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 200 V ID Continuous Drain Current 100 A IDM Pulsed Drain Current 1 400 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 520 W Derate Linearly 4.16 W/°C PD –55 to 150 TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 100 EAR Repetitive Avalanche Energy 1 50 EAS Single Pulse Avalanche Energy 2 2500 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 500µH, RG = 25W, Peak IL = 100A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99 SML20T75 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250mA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 2.5mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 200 Typ. 2 Max. Unit V 100 mA A VGS = 10V , ID = 0.5 ID [Cont.] 0.022 W DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Min. Coss Output Capacitance VDS = 25V 1950 Crss Reverse Transfer Capacitance f = 1MHz 560 Qg Total Gate Charge3 VGS = 10V 290 Qgs Gate – Source Charge VDD = 0.5 VDSS 66 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 120 td(on) Turn–on Delay Time VGS = 15V 16 tr Rise Time VDD = 0.5 VDSS 25 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 48 tf Fall Time RG = 0.6W Typ. 8500 Max. Unit pF nC ns 5 SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. Typ. Max. Unit 100 A 400 1.3 IS = – ID [Cont.] , dls / dt = 100A/ms IS = – ID [Cont.] , dls / dt = 100A/ms V 330 ns 5.8 mC THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 0.24 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99