SKM 200GB125D Absolute Maximum Ratings Symbol Conditions IGBT 7$3 $ $2: 7;3 (#= )(, 7 ( 4 -5 )9., 6$ 4 * (>?32%( > @ ( !2: !: 4 *. E CE (= 4 *5. 6$ SKM 200GB125D !2: ( 4 -5 )9., 6$ 4 * !: 4 *. E E (= 4 *5. 6$ SKM 200GAL125D Characteristics Symbol Conditions IGBT SKM 200GAR125D 7;3), Features ! " # $% &$' & $ ' ( )*+ , )-. , Typical Applications *-.. -.. )*., +.. < -. A B. CCC D *5. )*-5, 7 % % 7 6$ B... 7 -.. )*+., +.. % % *B5. % -.. )*+., +.. % % *B5. % Freewheeling diode ! Units %$ * C ( 4 -5 )9., 6$ 4 * ! Ultra Fast IGBT Modules Values Inverse diode SEMITRANSTM 3 ( 4 -5 6$ / -. 01 2 # *.. 01 # 3 / -. 01 $3 7$3)(>, $3 7$3), 7;3 4 7$3 $ 4 % 7;3 4 . 7$3 4 7$3 (= 4 -5 )*-5, 6$ (= 4 -5 )*-5, 6$ 7;3 4 *5 7 (= 4 -5 )*-5, 6$ $ ( 4 -5 6$ min. typ. max. B5 55 .*5 *5 *- 5 .B5 *F5 *B ++ +95 7 *. *5 .9 *+ *-. ! ! ! 4 *5. % 7;3 4 *5 7 # $ $ $ $3 7;3 4 . 7$3 4 -5 7 4 * :1 2$$HD33H C A (4 -5 )*-5, 6$ ), ), 7$$ 4 .. 7 $ 4 *5. % 2; 4 2; 4 B G (= 4 *-5 6$ 7;3 4 < *5 7 3 )3, Units 7 % 7 G .+5 ).5, G F5 + B-. -5 *B )9, I Inverse diode 7! 4 73$ J ! 4 *5. %E 7;3 4 . 7E (= 4 -5 )*-5, 6$ (= 4 -5 )*-5, 6$ (= 4 -5 )*-5, 6$ ! 4 *5. %E (= 4 *-5 ) , 6$ K 4 55.. %KL 3 7;3 4 . 7 7)(>, ( 22: - )*9, -5 7 ** -+. -B *9F 7 G % L$ + I FWD 7! 4 73$ 7)(>, ( J ! 4 *5. %E 7;3 4 . 7 (= 4 -5 )*-5, 6$ (= 4 -5 )*-5, 6$ (= 4 -5 )*-5, 6$ ! 4 *5. %E (= 4 *-5 ) , 6$ K 4 55.. %KL 3 7;3 4 . 7 22: - )*9, ** -+. -B -5 *9F + 7 7 G % L$ I Thermal characteristics 2)=A, 2)=A,& 2)=A,!& ;'( # & !O& ..M .-5 .-5 NKO NKO NKO 2)A, ..+9 NKO 5 5 +-5 Mechanical data GB GAL GAR : : 0 : : 1 14-09-2005 RAA + -5 © by SEMIKRON SKM 200GB125D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 2 14-09-2005 RAA © by SEMIKRON SKM 200GB125D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD Zthp(j-c) = f (tp); D = tp/tc = tp*f Zthp(j-c) = f (tp); D = tp/tc = tp*f Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current 3 14-09-2005 RAA © by SEMIKRON SKM 200GB125D Fig. 13 Typ. CAL diode recovered charge UL Recognized File no. E 63 532 Dimensions in mm ;' $ & 5 ;% $ & 5F )P & 5 , ;%2 $ & 59 )P & 5 , $ & 5 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 14-09-2005 RAA © by SEMIKRON