SKM 800GA125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
*<
>' %
SEMITRANSTM 3
Ultrafast IGBT Modules
SKM 800GA125D
Target Data
Features
!!
"##"
! "!" "$%&' %#
%
( ) Typical Applications
*
!! +,, -.
/" %"!
" %/! # 0 1,
-.
Remarks
2 3 4,, 5 %/ $& !
%
- "! # ! % "/
$& !& /"
"
" 6 147' % ! "#/
" 6 14 9, 7
6 + ?*5? 3 Values
Units
+1,,
:(, 4;,
+1,,
= 1,
@, AAA B+4, +14
5
5
7
@,,,
:1, 4,,
+1,,
5
5
4,,,
5
5' + A
Inverse diode
C
C*<
" 6 14 9, 7
6 + C<
6 +, D AD > 6 +4, 7
Characteristics
Symbol Conditions
IGBT
" 6 147' % ! "#/
?
!
6 ' 6 1@ 5
6 ,' 6 ' > 6 14 +14 7
> 6 14 +14 7
6 +4 ' > 6 14 +14 7
6 (,, 5' 6 +4 ' " % %
!
F
/! #%%
"
/
6 ,' 6 14 ' # 6 + <.
*GBG
!A' !
%" "6 14 +14 7
/
!
/##
#
6 (,, ' 6 (,, 5
*
6 *## 6 E' > 6 +14 7
= +4 min.
@'4
typ.
max.
Units
4'4
,'1
+'4 +':
1'9 ;'9
('4
,'(
+':4 +';
;'; 4'@
5
E
;'1 @
;':4 @'44
1,
C
C
C
;:
4'(
1'9
,'+9 ,'11
E
##
41 1(
H
Inverse diode
C 6 ?
!
**<
J!!
C
6 (,, 5D 6 , D > 6 14 +14
7
> 6 14 +14 7
> 6 14 +14 7
C
6 (,, 5D > 6 14 +14 7
/K/ 6 5KL
!!
6 , 1'; 1'+
1'4 1';
+'+ ,'I
1 1
+'; +',4
1 1'+
E
5
L
H
Thermal characteristics
*>"
*>"2
! ! ! 2/
,',;
,',:
MKN
MKN
*"
! /%
,',;9
MKN
4
4 1
;;,
Mechanical data
<
<
- <(
!
% <(<@
;
1'4 +'+
GA
1
14-06-2005 SEN
© by SEMIKRON
SKM 800GA125D
UL Recognized
File no. E 63 532
Dimensions in mm
2 4I
5
2 4I
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
2
14-06-2005 SEN
© by SEMIKRON