GL4100 GL4100 Side View and Thin Flat Type Infrared Emitting Diode ■ Features ■ Outline Dimensions 3.0 Detector center 2 - C0.5 1. Mouses 2. Track balls 0.7 Pale red transparent epoxy resin 1.4 4.0 0.3MAX. 4˚ 4˚ 0.1MAX. (1.7 ) 2 - 0.45 +- 0.3 0.1 2 1 0.5MIN. Rugged resin 0.2 MAX. 2 - 4 +- 0.3 0.1 1 (2.54 ) 6˚ 6˚ 2.8 Symbol IF I FM VR P Topr Tstg Tsol * ( ) : Reference dimensions * Tolerance : ± 0.2 mm (Ta=25˚C) Rating 50 1 6 75 - 25 to + 85 - 40 to + 85 260 Unit mA A V mW ˚C ˚C ˚C 1.4mm Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperatur Storage temperature *2 Soldering temperature 1 Anode 2 Cathode 6˚ 6˚ ■ Absolute Maximum Ratings 2 4˚ 0.15 4˚ 1.4 ■ Applications 1.8 0.7 0.9MAX. Rugged resin Gate burr (Half intensity angle : ± 90˚ ) (Unit : mm) 17.5 +- 15 10 1. Compact flat package 2. Wide beam angle Soldering area * 1 Pulse width <=100µ s, Duty ratio=0.01 * 2 For 5 seconds at the position of 1.4 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” GL4100 ■ Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength (Ta=25 ˚C ) Symbol VF V FM IR Φe λp Conditions I F = 20mA I FM = 0.5A V R = 3V I F = 20mA I F = 5mA MIN. 1.0 - TYP. 1.2 3.0 950 MAX. 1.4 4.0 10 2.0 - Unit V V µA mW nm Half intensity wavelength ∆λ I F = 5mA - 45 - nm Terminal capacitance Response frequency Half intensity angle Ct fc ∆θ V R = 0, f = 1MH Z I F = 20mA - 50 300 - kH Z ˚ Fig. 2 Peak Forward Current vs. Duty Ratio Fig. 1 Forward Current vs. Ambient Temperature 60 Pulse width <=100 µ s Ta= 25˚C (mA) 1000 FM 40 Peak forward current I Forward current I F (mA) 50 30 20 10 0 - 25 ± 90 pF 0 25 50 75 85 Ambient temperature Ta (˚C ) 100 100 10 1 10 - 4 10 - 3 10 - 2 Duty ratio 10 - 1 1 GL4100 Fig. 3 Spectral Distribution Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 100 1000 I F = const. Peak emission wavelength λ p (nm) Relative radiant intensity (%) IF = 5mA Ta= 25˚C 80 60 40 20 0 880 900 940 920 960 975 950 925 900 - 25 980 1000 1020 1040 Wavelength λ (nm) 50˚C 100 IF = const. 10 25˚C 0˚C Relative radiant flux (mA) F Forward current I 75 a (˚C) 20 Ta= 75˚C 50 50 Fig. 6 Relative Radiant Flux vs. Ambient Temperature 500 100 25 Ambient temperature T Fig. 5 Forward Current vs. Forward Voltage 200 0 - 20˚C 20 10 5 5 2 1 0.5 2 0.2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V 3.0 0.1 - 25 3.5 (V) F Fig. 7 Radiant Flux vs. Forward Current 10 0 25 50 75 Fig. 8 Relative Radiant Intensity vs. Distance 100 Ta = 25˚C Ta = 25˚C Relative radiant intensity (%) 5 Radiant flux Φ e ( mW) 2 1 0.5 Pulse (pulse width <=100 µs) DC 100 Ambient temperature Ta (˚C) 0.2 0.1 0.05 10 1 0.02 0.01 1 10 100 Forward current I F ( mA) 1000 0.1 0.1 1 10 Distance to detector d (mm) 100 GL4100 Fig. 10 Radiation Diagram - 20˚ 100 Ta=25˚C Relative radiant intensity (%) - 30˚ 10 - 40˚ 1 - 50˚ - 60˚ 0.1 - 70˚ 0.01 0.1 1 10 100 Distance to detector d (mm) ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) - 10˚ Relative radiant intensity (%) Fig. 9 Relative Radiant Intensity vs. Distance (Detector : PT4110) 0˚ 200 (Ta=25˚C) 10˚ 180 20˚ 30˚ 160 140 120 40˚ 100 80 50˚ 60 60˚ 40 70˚ - 80˚ 20 80˚ - 90˚ 0 90˚ Angular displacement θ