SHARP GP1S30

GP1S30
GP1S30
Subminiature Photointerrupter
■ Features
■ Outline Dimensions
( Unit : mm )
1. Compact package
2. PWB mouning type
3. Double-phase phototransistor output type for
detecting of rotation direction and count
4. Detecting pitch : 0.6mm
Internal connection diagram
PT1
1
PT2
2
AA'Section
3.8
1.45
(C0.6)
0.9
B
A
4.0
2.5
(1.0)
Center of
light path
B'
A'
5.0
(0.8)
3 Emitter2
4 Emitter1
5 Collector
BB'Section
4.0
(1.0)
2 - (0.37)
(C0.3) Rest of gate
(2)
5- 0.15 +- 0.2
5 - 0.4
0.1
❈
2.54
❈ 1.27
4.0MIN.
Slit width of
emitter side
1. Mouses
2. Cameras
4
3
1 Anode
2 Cathode
■ Applications
5
❈ 1.27
1
5
4
3
2
* Tolerance :± 0.2mm
* Burr's dimensions: 0.15MAX.
* Rest of gate : 0.3MAX.
* ( ) : Reference dimensions
* The dimensions indicated by ❈ refer
to those measured from the lead base.
■ Absolute Maximum Ratings
Collector-emitter voltage
Output
Emitter-collector Voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
IF
VR
P
V CE 1O
V CE 2O
V E 1CO
V E 2CO
Rating
50
6
75
Unit
mA
V
mW
35
V
6
V
IC
PC
P tot
T opr
T stg
T sol
20
75
100
- 25 to + 85
- 40 to + 100
260
mA
mW
mW
˚C
˚C
˚C
1mm or more
Input
Prameter
Forward current
Reverse voltage
Power dissipation
( Ta = 25˚C )
Soldering area
*1 For MAX. 5 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
GP1S30
■ Electro-optical Characteristics
( Ta = 25˚C )
Parameter
Forward voltage
Reverse current
Collector dark current
Collector current
Collector-emitter saturation voltage
Rise time
Response time
Fall time
Input
Output
Transfer
characteristics
Symbol
VF
IR
I CEO
IC
V CE(sat)
tr
tf
TYP.
1.2
50
50
MAX.
1.4
10
100
1 000
0.4
150
150
60
120
50
100
40
30
20
10
P tot
P, P c
80
60
40
20
0
- 25
0
25
75 85
50
0
- 25
100
Ambient temperature T a ( ˚C )
0
25
50
75 85
100
Ambient temperature T a ( ˚C )
Fig. 3 Forward Current vs. Forward Voltage
Fig. 4 Collector Current vs. Forward Current
500
Collector current I C ( mA )
50˚C
100
VCE = 5V
T a = 25˚C
10.0
25˚C
0˚C
- 25˚C
T a = 75˚C
200
Forward current I F ( mA )
Unit
V
µA
nA
µA
V
µs
µs
Fig. 2 Power Dissipation vs.
Ambient Temperature
Power dissipation P ( mW )
Forward current I F ( mA )
Fig. 1 Forward Current vs. Ambient
Temperature
MIN.
250
-
Conditions
I F = 20mA
V R = 3V
V CE = 20V
V CE = 5V, I F = 4mA
I F = 8mA, I C = 125 µ A
V CC = 5V, I C = 100 µ A
RL = 1 000 Ω
50
20
10
8.0
6.0
4.0
5
2.0
2
1
0
0
0.5
1
1.5
2
Forward voltage V F ( V )
2.5
3
0
10
20
30
40
Forward current I F ( mA )
50
GP1S30
Fig. 5 Collector Current vs.
Collector-emitter Voltage
Fig. 6 Collector Current vs.
Ambient Temperature
600
T a = 25˚C
10
Collector current IC (µ A)
Collector current I C ( mA )
500
8
I F = 50mA
40mA
6
30mA
4
20mA
400
300
200
10mA
2
100
4mA
0
0
2
4
6
10
8
- 25
0
Collector-emitter voltage V CE ( V )
25
50
75 85
Ambient temperature Ta ( ˚C )
Fig. 8 Collector Dark Current vs.
Ambient Temperature
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
10 - 6
I F = 8mA
I C = 125 µ A
V CE = 20V
( A)
5
2
10 - 7
CEO
0.16
0.15
5
Collector dark current I
Collector-emitter saturation voltage VCE(sat) ( V )
0.17
0.14
0.13
0.12
0.11
2
10 - 8
5
2
10 - 9
5
0.10
2
10 - 10
- 25
0
25
50
75 85
0
25
Ambient temperature Ta ( ˚C )
50
75
100
Ambient temperature T a ( ˚C )
Fig. 9 Response Time vs.
Load Resistance
Response time ( µ s )
500 VCE = 5V
I C = 100µ A
T a = 25˚C
tr
Test Circuit for Response Time
tf
100
td
ts
10
Input
VCC
Input
RD
RL
Output
Output
10%
90%
td
ts
tr
1
0.5
1
10
Load resistance R L ( kΩ )
50
tf
GP1S30
Fig.10 Relative Collector Current vs.
Shield Distance ( 1 )
100
90
80
L
70
L= 0
60
I F = 4mA
50
VCE = 5V
40
30
Relative collector current ( % )
Relative collector current ( % )
Moving distance
Shield
100
80
Please refer to the chapter “Precautions for Use”.
I F = 4mA
50
VCE = 5V
40
30
10
3
L= 0
60
20
2
L
70
10
1
Shield
90
20
Shield distance L ( mm )
●
Fig.11 Relative Collector Current vs.
Shield Distance ( 2 )
0.5
1
1.5
Shield distance L ( mm )
2