LT0H33P HOLOGRAM LASER Hologram Laser(3 beam) for MD players (Unit: mm) φ 8.2 4.8 0.25MIN. 0.25MIN. φ 6.63 Hologram glass 3.97 3.2 2.0 Cap glass 0.3 MAX. 4.77 LD chip Reference surface 4.6 (3) The adjustment during pickup assembly is eased and can easily be automated. Outline Dimensions 1.27 (1) Enables to design compact pick-up thanks to compact package. (Thickness; 4.8mm) (2) Since its semiconductor laser, signal detection photocell, and circuit array are assembled in a package, the optical pick is simple in assembling and adjustment ■ 1.2 Features 0.25 ■ ■ Applications (1) MD players 10 - φ 0.4 8.2 P1.4 ± 0.2 X 3 = 4.2± 0.2 2 3 4 9 8 7 2.8 5 4.8 1 10 6 4.9 [Terminal connection] LT0H33P 10 1 Laser diode 5 2 G 9: NC ■ D1 3 D2 4 D3 6 D4 8 D5 7 Absolute Maximum Ratings Parameter Symbol Ratings Units Optical power output *1 PO 7.0 mW Laser 2 Reverse Monitor photodiode VR 30 V voltage Photodiode for signal detection 15 Operating temperature*2 Topr -25 to +70 ˚C Storage temperature *2 Tstg -40 to +85 ˚C Soldering temperature *3 Tsol 260(5s or less) ˚C *1 Output power from hologram laser *2 Case temperature *3 At the position of 1.6mm from the bottom face of resin package. (Notice) • In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. • Specifications are subject to change without notice for improvement. (Internet) • Data for Sharp's optoelectronic/power devices is provided for internet. ( Address http://www.sharp.co.jp/ecg/) TEC940525 LT0H33P ■ Electro-optical Characteristics Parameter Threshold current Operating current Operating voltage Wavelength *2 Monitor current Laser (without hologram glass) Radiation Characteristics Angle Emission Point accuracy Symbol Ith Iop Vop λp Im Parallel θ// Perpenθ⊥ dicular ∆φ // Angle ∆φ ⊥ ∆x Positon ∆y ∆z Differentioal efficiency Monitor Photodiode Photodiode for signal detection Sensitivity Dark current Terminal capacitance Condition Po = 6mW *1 Po =6mW *1,VR=15V Po = 6mW *1 18.3mW η Iop(6mW)-Iop(6mW) S Id Ct VR=1.5V Reverse voltage VR IR=10µA Dark current Id VR=1.5V Terminal capacitance Ct VR=1.5V,f=1MHz Short circuit current*3 *4 Isc Ev=1000Lx Response time *5 tr,tf VR=1.5V, RL=180Ω A B C A B C A B C A B C A B C (Tc=25˚C) Units MAX 60 mA 85 mA 2.0 V 800 nm 1 mA 13 ˚ 43 ˚ ±1 ˚ ±3 ˚ ±20 µm ±20 µm ±80 µm MIN 770 0.15 8.5 29 - TYP 45 63 780 0.5 11 38 - 0.15 0.3 0.6 mW/mA - 0.08 20 150 - mA/mW nA pF 15 - - V - - 10 nA 1 - 8 0.6 - 6 120 40 60 - 210 80 115 - 660 - - 660 pF nA ns *1 Output power form LD chip *2 Oscillation mode, transverse single mode *6 Applicabledivisions correspond to pattern segment No. *3 Values in each element. Elements other than subject elemens shall be measured while the anode and the cathode are short-sircuited to each other *4 Short-circuit currents between segments D1 and D5 or D3 and D4 shall be within ±10% of the average *5 Measuring method is shown below. Laser diode λ=780nm Input 50% Input Output RL =180Ω VR=15V 90% Output tr 10% tf D1 D2 D3 D5 D4 Segment No. D1,D5 ••••••• A D2,D3 ••••••• B D4 ••••••••••• C Fig.1 LT0H33P ■ Electro-optical Characteristics *1 Parameter Focus error signal offsetting *2 Focus error noise *3 Radial error balance *4 RF Output amplitude *5 FES Output amplitude *6 RES Output amplitude *6 MIN -0.4 -20 6.0 3.3 0.6 Condition D2 + D3 + D4 D2 - D3 D1 - D5 TYP 19 10.6 5.5 1.3 MAX +0.4 +20 8.1 2.2 D1,D2,D3,D4,D5: Refer to pattern segment No. (Fig.1) *1 Measuring method is shown below. Actuator C.L. Disk Laser TCD-782 Driver (A-BEX) APC HL NA=0.17 NA=0.45 f=10.74mm f=3.4mm Measuring method of electro-optical characteristics *2 Distance between FES=0 and jitter Min. point a b *3 *4 (a - b) / 2 a+b a a b GND b *5 Focus/radial servo is ON-state *6 FES output amplitude: focus rocking condition RES output amplitude: under the condition that only focus servo is effected (Tc=25˚C) Units µm µm % µA p-p µA p-p µA p-p