Hall Device
LT135A
Hall Voltage 240mV GaAs Hall Device
LT135A
■ Features
¡Small temperature coefficient of the Hall voltage
¡Good linearity of the Hall voltage
¡Small imbalanced voltage
¡Directly DC voltage applicable
■ Outline Dimensions
(Unit : mm)
N
3
0.4
0.4
2
(0.95)
¡Brushless motors
VCR, CD, CD-ROM, FDD
¡Measuring equipment
Gauss meters, magnetic substance detectors
¡Noncontact sensors
Microswitches, tape-end detection
¡Other magnetic detection
4-R0.2
1.5±0.2
0.6
0.3
0.6
Unit
V
mA
mW
˚C
˚C
˚C
1.1 +0.2
-0.1
0.8
(Ta=25˚C)
Symbol
Rating
VC
12
IC
15
150
PD
-20 to +125
Topr
-55 to +150
Tstg
260
Tsol
Terminal connection
1:VC Input
2:VH Output
3:VC Input
4:VH Output
(0to0.15)
Parameter
Control voltage
Control current
Power dissipation
Operating temperature
Storage temperature
Soldering temperature*1
0.16+0.10
-0.06
■ Absolute Maximum Ratings
2.9±0.2
2.9±0.2
1.9
■ Applications
4
(0.85)
1
0.6
0.4
2.7±0.3
As for dimensions of tape-packaged products, refer to page 44 .
*1 Soldering time : 10 seconds
■ Electrical Characteristics
Parameter
No-load Hall voltage *1
Imbalanced voltage *2
Input resistance
Output resistance
(Ta=25˚C)
Symbol
VH
VHO
RIN
ROUT
Drift of imbalanced voltage vs. temperature
|∆VHO|
Temperature coefficient of Hall voltage
Temperature coefficient of input resistance
Linearity of Hall voltage
β
α
γ
Conditions
VC=6V, B=100mT
VC=6V, B=0mT
IM=1mA, B=0mT
IM=1mA, B=0mT
VC=6V, B=0mT, Ta=-20˚C to 25˚C
VC=6V, B=0mT, Ta=25˚C to 125˚C
IC=6mA, B=100mT, T1=-20˚C, T2=125˚C
IM=1mA, B=0mT, T1=-20˚C, T2=125˚C
IC=6mA, B1=50mT, B2=100mT
MIN
200
-15
650
1 300
TYP.
240
800
1 600
MAX.
280
15
950
1 900
Unit
mV
mV
Ω
Ω
-
5
-
mV
-
-0.03
0.2
2
-
%/˚C
%/˚C
%
*1 No-load Hall voltage is nearly proportional to Vc (within the range of 1 to 6V) at temperatures of -20˚C to + 125˚C.
Keep the voltage within the allowable power dissipation range.
*2 Imbalanced ratio is in +/-12% within the range of Vc=1 to 6V.
VH=VM-VHO
1
{VH(T2)-VH(T1)}
β=
X100
X
VH(T1)
(T2-T1)
{RIN(T2)-RIN(T1)}
1
X
X100
α=
(T2-T1)
RIN(T1)
{KH(B2)-KH(B1)}
VH
X2X100, KH=
γ=
(ICXB)
{KH(B1)+KH(B2)}
VM:Observed Hall voltage
VHO:Imbalanced voltage
KH:Sensitivity
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices
shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device spcification sheets before using any SHARP device.
Hall Device
Fig. 1
LT135A
Hall Voltage vs. Ambient
Temperature
Fig. 2
Input Resistance vs. Ambient
Temperature
2 000
B=100mT
B=0mT
IM=1mA
250
Input resistance RIN (Ω)
Hall voltage VH (mV)
300
VC=6V
200
IC=6mA
150
100
50
0
-20
Fig. 3
800
400
0
-20
Fig. 4
Hall voltage VH (mV)
1 200
1 000
800
600
400
0
40
80
120
Ambient temperature Ta (˚C)
Hall Voltage vs. Control Current
600
VC=6V
Ta=25˚C
1 400
1 200
120
Hall Voltage vs. Magnetic Flux
Density
1 600
Hall voltage VH (mV)
0
40
80
Ambient temperature Ta (˚C)
1 600
B=100mT
Ta=25˚C
400
300
200
100
200
0
Fig. 5
Hall Voltage vs. Control Voltage
B=100mT
Ta=25˚C
Hall voltage VH (mV)
600
500
400
300
200
100
0
0
0
100 200 300 400 500 600
Magnetic flux density B (mT)
2
4
6
8
10 12
Control voltage VC (V)
0
Fig. 6
4
8
12
Control current IC (mA)
Power Dissipation vs. Ambient
Temperature
200
Power dissipation PD (mW)
0
160
120
80
40
0
0
40
80
120
160
Ambient temperature Ta (˚C)
200