PC355NT PC355NT Mini-Flat Package, High Sensitivity Photocoupler ■ Features ■ Outline Dimensions PC355NT 2.54 ± 0.25 355 1 Anode mark 1 2 3 4 2 0.4 ± 0.1 3.6 ± 0.3 5. Recognized by UL (NO. E64380) 1 C0.4 Input side Anode Cathode Emitter Collector 2 5.3 ± 0.3 0.2 ± 0.05 3 4.4 ± 0.2 4 Internal connection diagram 4 3 0.1 ± 0.1 2.6 ± 0.2 1. High current transfer ratio ( CTR : MIN. 600% at I F = 1mA, V CE = 2V) 2. Opaque type, mini-flat package PC355NT ( 1-channel ) 3. Subminirature type ( The volume is smaller than that of our conventional DIP type by as far as 30%) 4. Isolation voltage between input and output PC355NT •••Viso : 3 750V rms ( Unit : mm ) 0.5 +- 0.4 0.2 7.0 +- 0.2 0.7 6˚ ■ Package Specifications Model No. Taping specifications PC355NT Taping reel diameter 178mm (750pcs.) ■ Applications 1. Hybrid substrates that require high density mounting. 2. Programmable controllers “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PC355NT ■ Absolute Maximum Ratings Output Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Symbol IF I FM VR P V CEO V ECO IC PC P tot V iso T opr T stg T sol Rating 50 1 6 70 35 6 80 150 170 3 750 - 30 to + 100 - 40 to + 125 260 Unit mA A V mW V V mA mW mW V rms ˚C ˚C ˚C Soldering area 0.2mm or more Input ( Ta = 25˚C ) *1 Pulse width <=100 µs, Duty ratio : 0.001 *2 40 to 60% RH, AC for 1 minute *3 For 10 senconds ■ Electro-optical Characteristics Input Output Transfercharacteristics Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Collector-emitter breakdown voltage Emitter-collector breakdown voltage Current transfer ratio Collector-emitter saturation voltage Isolation resistance Floating capacitance Rise time Response time Fall time ( Ta = 25˚C ) Symbol VF IR Ct I CEO BV CEO BV ECO CTR V CE(sat) R ISO Cf tr tf Conditions I F = 20mA V R = 4V V = 0, f = 1kHz V CE = 10V, I F = 0 I C = 0.1mA, I F = 0 I E = 10 µA, I F = 0 I F = 1mA, V CE = 2V I F = 20mA, I C = 1mA DC500V, 40 to 60% RH V = 0, f = 1MHz V CE = 2V, I C = 2mA R L = 100Ω MIN. 35 6 600 5 x 1010 - TYP. 1.2 30 1 600 0.8 1011 0.6 60 53 MAX. 1.4 10 250 10 - 6 7 500 1.0 1.0 300 250 Unit V µA pF A V V % V Ω pF µs µs PC355NT Fig. 2 Diode Power Dissipation vs. Ambient Temperature Fig. 1 Forward Current vs. Ambient Temperature 70 Diode power dissipation P ( mW ) Forward current I F ( mA ) 60 50 40 30 20 100 80 70 60 40 20 10 0 - 30 0 25 50 75 100 0 - 30 125 0 Fig. 3 Collector Power Dissipation vs. Ambient Temperature ( mW ) 250 tot 150 Total power dissipation P Collector power dissipation P C ( mW ) ( ˚C) 300 100 50 0 - 30 0 25 50 75 100 200 170 150 100 50 0 - 30 125 0 Ambient temperature Ta ( ˚C) 10000 50 100 Fig. 6 Forward Current vs. Forward Voltage 500 Pulse width <=100 µs T a = 25˚C 5000 25 Ambient temperature T a ( ˚C) Fig. 5 Peak Forward Current vs. Duty Ratio T a = 75˚C 200 2000 Forward current I F ( mA ) Peak forward current I FM ( mA ) 100 a Fig. 4 Total Power Dissipation vs. Ambient Temperature 200 1000 500 200 100 50 50˚C 100 25˚C 0˚C 50 - 25˚C 20 10 5 2 20 10 5 50 55 Ambient temperature T Ambient temperature T a ( ˚C ) 1 5 10 -3 2 5 10 -2 2 Duty ratio 5 10 -1 2 5 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V) 3.0 3.5 PC355NT Fig. 7 Current Transfer Ratio vs. Forward Current Fig. 8 Collector Current vs. Collectoremitter Voltage 100 5000 T a = 25˚C T a = 25˚C 4000 Collector current I C ( mA ) Current transfer ratio CTR ( % ) V CE = 2V 3000 2000 I F = 10mA 80 P C ( MAX. ) A 5m 60 2mA 40 20 1000 0 1mA 0 1 0.1 10 0 100 Forward current I F ( mA ) Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature 50 20 40 80 60 I C = 1mA 1.2 1.0 0.8 0.6 0.4 0.2 0 - 30 100 5 10 Response time ( µ s ) Collector dark current I CEO ( A) V CE = 2V 200 I C = 2mA T = 25˚C 100 a V CE = 10V -6 -8 5 5 10 80 60 40 100 500 5 -7 20 Fig.12 Responce Time vs. Load Resistance -5 10 0 Ambient temperature T a ( ˚C ) Fig.11 Collector Dark Current vs. Ambient Temperature 10 5 I F = 20mA Ambient temperature T a ( ˚C ) 10 4 1.4 100 0 3 1.6 I F = 1mA V CE = 2V 0 - 30 2 Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage V CE(sat ) ( V) Relative current transfer ratio ( % ) 150 1 Collector-emitter voltage V CE ( V ) 20 td 10 5 5 1 10 - 10 0.5 10 - 11 5 tf 50 ts 2 -9 tr 0.2 0.1 - 30 0 20 40 Ambient temperature T 60 a 80 ( ˚C ) 100 0.01 0.1 1 Load resistance R 10 L (kΩ ) 100 PC355NT Fig.13 Collector-emitter Saturation Voltage vs. Forward Current Test Circuit For Response Time 6.4 VCC Input Input RD RL Output Output 10% 90% td ts tr tf Collector-emitter saturation voltage V CE(sat ) ( V) T a = 25˚C I C = 0.5mA 1mA 4.8 3mA 5mA 7mA 3.2 30mA 50mA 1.6 0 0 0.8 1.6 2.4 3.2 Forward current I F ( mA ) ■ Temperature Profile of Soldering Reflow ( 1 ) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230˚C 200˚C 180˚C 1 minute 25˚C 2 minutes 1.5 minutes 1 minute ( 2 ) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above ( 1 ) . ● Please refer to the chapter “ Precautions for Use.” 4.0