PD410PI PD410PI High Speed Photodiode ■ Features ■ Outline Dimensions 0.2 2.0 ± 0.2 R1.75 2.5 Rest of gate 0.4MAX. 2.4 8˚ 8˚ 2.15 17.15 +- 1.5 1.0 1. Infrared remote controllers for TVs, VCRs, audio equipment and air conditioners, etc. 1 8˚ 0.4 0.2 1 3.75± 8˚ 0.5MIN. 0.45 2.54 2 1 Anode 2 Cathode ■ Absolute Maximum Ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature ( Ta = 25˚C ) Symbol VR P Topr Tstg Tsol Rating 32 150 - 25 to + 85 - 40 to + 100 260 Unit V mW ˚C ˚C ˚C *1 For 5 seconds at the position of 2.15mm from the bottom face of resin package ■ Electro-optical Characteristics Parameter Shortcircuit current Short-circuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Half intensity angle Response time 0.5 0.8 ■ Applications 1.5 Black epoxy resin ( Visible light cut-off type ) 4.0± Detector center 5.0± 0.2 1. Peak sensitivity wavelength matching with infrared LED( λ p= 1 000nm ) 2. Built-in visible light cut-off filter ( Unit : mm ) Symbol I SC βT Id αT Ct λp K ∆θ tr , t f ( Ta = 25˚C ) Conditions E V = 100 lx E V = 100 lx V R = 10V, E V = 0 V R = 10V, E V = 0 V R = 3V, f= 1MHz MIN. 2.5 - λ = 1000nm R L = 1kΩ , VR = 10V - TYP. 3.0 0.2 0.5 3.5 20 1000 1 ± 45 200 MAX. 4.5 10 5.0 35 - Unit µA % /˚C nA times/10˚C pF nm A/W ˚ ns “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” 2 PD410PI Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity 200 100 Ta = 25˚C 80 150 Relative sensitivity(%) Power dissipation P ( mW ) 90 100 50 70 60 50 40 30 20 10 0 - 25 0 0 25 50 75 85 600 100 700 Ambient temperature Ta ( ˚C ) Fig. 3 Dark Current vs. Ambient Temperature 800 900 1000 Wavelength λ ( nm ) 1100 1200 Fig. 4 Dark Current vs. Reverse Voltage 10 -7 10 - 6 VR = 10V T a = 25˚C 5 10 - 7 2 10 - 8 5 Dark current I d (A) Dark current I d ( A ) 10 -8 10 - 9 10 - 10 2 10 -9 5 2 10 -10 10 - 11 5 10 - 12 10 -11 2 - 25 0 25 50 75 Ambient temperature Ta ( ˚C ) 100 5 10- 2 2 5 Fig. 6 Relative Output vs. Ambient Temperature ( Emitter : GL537 / GL538) Detector:PD410PI) Fig. 5 Terminal Capacitance vs. Reverse Voltage 60 160 f = 1MHz T a = 25˚C 140 50 Relative output ( % ) Terminal capacitance C t ( pF ) 5 10- 1 2 5 1 2 5 10 2 Reverse voltage VR ( V ) 40 30 20 ( Test circuit ) GL537 PD410Pl GL538 120 A 100 80 60 40 10 20 0 0.05 0.1 0.2 0.5 1 2 5 Reverse voltage VR ( V ) 10 20 50 0 - 25 Distance between infrared light emitting diode and photodiode shall be fixed when I SC = 100µ A at I = 20mA and T a = 25˚C. 0 25 50 75 Ambient temperature Ta ( ˚C ) F 100 PD410PI Fig. 7 Sensitivity Diagram - 20˚ - 10˚ 0 Fig. 8 Relative Output vs. Distance (Emitter : GL537/ GL538, Detector :PD410PI) ( Ta = 25 ˚C ) +10˚ +20˚ 100 100 - 40˚ - 50˚ - 60˚ + 30˚ 80 60 + 40˚ 40 + 50˚ + 60˚ GL538 Relative output ( % ) Relative radiant intensity (%) - 30˚ 10 GL537 1 20 - 70˚ + 70˚ - 80˚ + 80˚ + 90˚ - 90˚ 0 IF = 20mA Ta = 25˚C 0.1 10 - 4 Angular displacement θ 10 -3 10 -2 10 -1 Distance between emitter and detector d (m ) Fig. 9 Responce Time vs. Load Resistance 10 2 5 VR = 10V Responce time t r , t f ( µ s ) 2 Test Circuit for Responce Time T a = 25˚C 10 1 5 2 Laser diode 10 0 IOUT = 0.1mA PD410PI + Output 5 2 10 Input 10V 90% Output -1 10% RL 5 Pulse generator 2 10 -2 10 2 5 10 2 2 5 10 3 2 5 10 4 2 5 10 5 Load resistance R L ( Ω ) ● Please refer to the chapter “Precautions for Use. ” tr tr