PT495F Intermediate Acceptance High Sensitivity Phototransistor PT495F ■ Outline Dimensions ■ Features 1. Epoxy resin package type 2. Compact 2-C0.5 1.55 1.15 0.75 4.0 1.5 2.8 ) 2-0.8 (3.0) (1.7 ) Visible light cut-off resin (black) (2-0.6 ) 43.0 ±1 5 . Visible light cut-off type ( 18.5 ) ( R1.25±0.1 3.0 1.4 3. Intermediate acceptance (∆θ : TYP.± 40˚ ) 4. Long lead pin type MAX. lead length of 51.5 mm acceptable to order (Unit : mm) ■ Applications 1. VCRs 2-0.45 2. Optoelectronic switches + 0.15 + 0.15 - 0.05 2-0.4 - 0.05 (2.54) 2 1 2 2 Collector 1 Emitter 2.8 (Note) MAX. lead length of 51.5 mm acceptable to order ■ Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol (Ta=25˚C) Rating 35 6 50 75 - 25 to +85 - 40 to +85 260 Unit V V mA mW ˚C ˚C ˚C *1 1 For 3 seconds at the position of 1.4 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” 1 PT495F ■ Electro-optical Characteristics Parameter *2 Collector current Dark current *2 Collector-emitter saturation voltage Peak sensitivity wavelength Rise Fall Response time (Ta=25˚C) Symbol Conditions V CE = 2V, E V = 2 lx IC V CE = 10V, E e = 0 I CEO I C = 0.8mA, V CE(sat) E e = 1mW/cm2 λp tr V CE = 2V, I C = 5mA R L = 100Ω tf ∆θ - Half intensity angle MIN. 0.2 TYP. - MAX. 0.8 Unit mA - - 10 -6 A - - 1.0 V - 860 80 70 ± 40 400 350 - nm - µs ˚ *2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp) Fig. 1 Collector Power Dissipation vs. Ambient temperature Fig. 2 Dark Current vs. Ambient temperature 10 - 4 5 VCE = 10V 10 - 5 5 (A) 70 CEO 60 50 Dark current I Collector power dissipation PC ( mW ) 80 40 30 20 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 0 - 25 10 - 6 5 0 25 50 75 85 10 - 11 5 - 25 100 Ambient temperature Ta (˚C) 50 175 50 75 100 VCE = 2V T a = 25˚C VCE = 2V EV = 2 1x 150 Collector current I C (mA) Relative collector current (%) 25 Fig. 4 Collector Current vs. Irradiance Fig. 3 Relative Collector Current vs. Ambient temperature 125 100 75 50 - 25 0 Ambient temperature Ta (˚C) 20 10 5 2 0 25 50 75 Ambient temperature Ta (˚C) 100 1 2 5 10 - 1 2 Irradiance E e ( mW/cm 2) 5 1 PT495F Fig. 5 Collector Current vs. Collector-emitter voltage Fig. 6 Spectral Sensitivity 50 100 T a = 25˚C T a = 25˚C 40 35 80 Ee = 0.5mW/cm2 Relative sensitivity (%) Collector current I C (mA) 45 30 PC (MAX.) 25 0.25mW/cm2 20 15 0.2mW/cm 10 0.15mW/cm2 0.1mW/cm2 2 5 0 0 1 2 60 40 20 3 4 5 6 0 500 7 600 700 Fig. 7 Response Time vs. Load Resistance 800 900 1000 1100 1200 Wavelength λ (nm) Collector-emitter voltage VCE (V) Test Circuit for Response Time 1000 Response time (µ s) VCE = 2V IC = 5mA T a = 25˚C tr 100 tf Output Input td VCC 10 90% RL ts Output td tr + 10˚ Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance + 20˚ 100 - 40˚ - 50˚ + 30˚ Relative sensitivity (%) - 30˚ 80 60 40 - 60˚ - 70˚ + 40˚ + 50˚ + 60˚ 20 + 70˚ - 80˚ + 80˚ - 90˚ + 90˚ 0 Angular displacement θ ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 2.2 T a = 25˚C 2.0 1.8 1.6 1.4 1.2 5mA 0˚ 2mA - 10˚ 3mA - 20˚ ( Ta = 25˚C) (V) Fig. 8 Radiation Diagram 5000 1mA 1000 IC = 0.5mA 100 Load resistance R L ( Ω ) CE ( sat ) 10 Collector-emitter saturation voltage V 1 10% ts tf 1.0 0.8 0.6 0.4 0.01 0.1 Irradiance Ee ( mW/cm 2) 1