S102S11/S102S12/S202S11/S202S12 S102S11/S102S12 S202S11/S202S12 SIP Type SSR with Snubber Circuit and Mouning Capability for External Heat Sink ■ Features ■ Outline Dimensions 18.5 ± 0.2 3.2 ± 0.2 16.4 ± 0.3 φ 3.2 ± 0.2 * A 19.6 ± 0.2 (36.0) B 1 2 3 4.2MAX. + - - 1.1 ± 0.2 - 1.25 ± 0.3 - 0.8 ± 0.2 4 11.2MIN. 4 4 4 5.5 ± 0.2 5.0 ± 0.3 A (Model No.) B S102S11 8A135VAC S102S12 S202S11 8A250VAC S202S12 (5.08) (7.62) ■ Applications (Unit : mm ) * The metal parts marked * are common to terminal 1 . ❈ Do not allow external connection. ( ) : Typical dimensions ❈ 0.2 MAX. 1. High radiation resin mold package 2. Built-in snubber circuit 3. Built-in zero-cross circuit ( S102S12/S202S12) 4. High repetitive peak OFF-state voltage S102S11/S102S12 V DRM : 400V S202S11/S202S12 V DRM : 600V 5. RMS ON-state current I T : MAX. 8Arms at TC <= 88˚C ( With heat sink) 6. Isolation voltage between input and output ( Viso : 4 000Vrms ) 7. Recognized by UL, file No. E94758 Approved by CSA, No. LR63705 0.6 ± 0.1 (2.54) Internal connection diagram 1. Automatic vending machines 2. Amusement equipment 3. Programmable controllers S102S11 /S202S11 S102S12 /S202S12 Zero-cross circuit ■ Model line-ups 1 For 100V lines For 200V lines Built-in snubber circuit S102S11 S202S11 Built-in snubber circuit and zero-cross circuit S102S12 S202S12 1 2 3 4 2 3 4 Output ( Triac T2 ) Output ( Triac T1 ) Input ( + ) Input ( - ) 1 2 1 2 3 4 3 4 Output ( Triac T2 ) Output ( Triac T1 ) Input ( + ) Input ( - ) “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” (1.4) S102S11/S102S12/S202S11/S202S12 ■ Absolute Maximum Ratings Input ( Ta = 25˚C ) Parameter Forward current Reverse voltage RMS ON-state current *1 Peak one cycle surge current Symbol IF VR IT I surge S102S11/S102S12 S202S11/S202S12 S102S11/S102S12 S202S11/S202S12 Repetitive peak-OFF state voltage Output Non-repetitive peak-OFF state voltage Critical rate of rise of ON-state current Isolation voltage Operating temperature Storage temperature *3 Soldering temperature V DSM dI T /dt V iso T opr T stg T sol *2 Load supply voltage V DRM S102S11/S102S12 S202S11/S202S12 V out Rating 50 6 *4 8 80 400 600 400 600 50 4 000 - 20 to + 80 - 30 to + 100 260 135 250 Unit mA V A rms A V V A/µ s V rms ˚C ˚C ˚C V rms *1 50Hz sine wave, start at Tj= 25˚C *2 60Hz AC for 1 minute, RH= 40 to 60% , Apply voltages between input and output, by the dielectric withstand voltage tester with zero-cross circuit. ( Input and output shall be shorted respectively) . ( Note) When the isolation voltage is necessary at using external hear sink, please use the insulation sheet. *3 For 10 seconds *4 Tc <= 88˚C ■ Electro-optical Characteristics Input Parameter Forward voltage Reverse current ON-state voltage ( Ta = 25˚C ) Symbol VF IR VT S102S11/S102S12 I op S202S11/S202S12 S102S11/S102S12 Open circuit I leak leak current S202S11/S202S12 Output Critical rate of rise of OFF-state dV/dt voltage Critical rate of rise of ( dV/dt ) C Commutating OFF-state voltage Zero-cross voltage S102S12/S202S12 V OX S102S11/S202S11 Minimum trigger I FT current S102S12/S202S12 Transfer Isolation resistance R ISO characS102S11/S202S11 teristics Turn-on time t on S102S12/S202S12 Turn-off time t off Thermal resistance R th(j - c) ( Between junction and case ) Thermal resistance R th(j - a) ( Between junction and ambience ) Minimum Operating current Conditions I F = 20mA V R = 3V I T = 2Arms V out = 120Vrms V out = 240Vrms V out = 120Vrms V out = 240Vrms V D = 2/3V MIN. - TYP. 1.2 - MAX. 1.4 10 - 4 1.5 Unit V A V rms - - 50 mA rms - - 5 10 mA rms 30 - - V/µ s 5 - - V/µ s 10 10 - - 35 8 8 1 9.3 9.3 V mA mA Ω ms ms ms - - 4.0 - ˚C/W - - 40 - ˚C/W DRM Tj = 125 ˚C dI t /dt = - 4.0A/ms, *5 I F = 8mA VD = 12V, R L = 30 Ω VD = 6V, R L = 30 Ω DC500V, RH = 40 to 60 % AC60Hz AC60Hz *5 S102S11/S102S12 : V D= 400V S202S11/S202S12 : V D= 600V S102S11/S102S12/S202S11/S202S12 Fig. 1 RMS ON-state Current vs. Case Temperature Fig. 2 RMS ON-state Current vs. Ambient Temperature 5 RMS ON-state current I T ( Arms ) RMS ON-state current I T ( Arms ) 10 8 6 4 2 0 - 20 60 70 80 90 100 110 Case temperature T C ( ˚C) 120 4 3 2 1 0 - 20 130 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 4 Surge Current vs. Power-on Cycle Fig. 3 Forward Current vs. Forward Voltage ( Typical Value ) 100 100 f = 50H z Sine wave T j = 25˚C Start Surge current I surge ( A ) Forward current I F ( mA ) 80 T a = 100˚C 75˚C 50˚C 25˚C 0˚C - 25˚C 10 60 40 20 1 0 1.0 Forward voltage V F ( V ) 0 1 2.0 Fig. 5 Maximum ON-state Power Dissipation vs. RMS ON-state Current ( Typical Value) 10 2 12 Minimum trigger current I FT ( mA ) Maximum ON-state power dissipation ( W ) 100 V D = 12V R L = 30Ω 5 2 4 6 8 10 RMS ON-state current I T ( Arms ) 50 Fig. 6 Minimum Trigger Current vs. Ambient Temperature ( Typical Value ) ( S102S11/S202S11 ) T a = 25˚C 0 5 10 20 Power-on cycle ( Times ) 12 10 8 6 4 2 0 - 20 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 S102S11/S102S12/S202S11/S202S12 Fig. 7 Minimum Trigger Current vs. Ambient Temperature ( Typical Value ) (S102S12 / S202S12) 12 Fig. 8 Open Circuit Leak Current vs. Supply Voltage ( Typical Value ) ( S102S11/S102S12 ) 6 T a = 25˚C 10 Open circuit leak current Ileak ( mA rms ) Minimum trigger current I FT ( mA ) V D = 6V R L = 30Ω 8 6 4 2 0 - 20 0 20 40 60 80 Ambient temperature T a ( ˚C ) 100 Fig. 9 Open Circuit Leak Current vs. Supply Voltage ( Typical Value ) ( S202S11/S202S12 ) 6 Open circuit leak current I leak ( mA rms ) T a = 25˚C 5 4 3 2 1 0 0 200 Supply voltage ( Vrms ) 320 ● Please refer to the chapter “ Precautions for Use.” 5 4 3 2 1 0 0 100 Supply voltage ( Vrms ) 160