SHINDENGEN Switching Power Transistor HSV Series OUTLINE DIMENSIONS 2SA1880 Case : ITO-220 (TP10T8) Unit : mm -10A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj V CBO V CEO V EBO IC ICP IB I BP PT Vdis TOR ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage V CEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current I EBO DC Current Gain hFE Collector to Emitter Saturation Voltage V CE(sat) Base to Emitter Saturation Voltage V BE (sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Tc = 25℃ Terminal to case, AC 1 minute (Recommended torque : 0.3N･m) Conditions I C = -0.1A At rated Voltage At rated Voltage VCE = -2V, IC =-5A I C = -5A I B = -0.5A Junction to case VCE = -10V, IC = -1A I C = -5A I B1 = -0.5A, I B2 = -0.5A R L = 5Ω, VBB2 = -4V Ratings -55∼150 150 -80 -80 -7 -10 -20 -1.5 -2 25 2 0.5 Unit ℃ ℃ V V V A A A A Ratings Min -80 Max -0.1 Max -0.1 Max -0.1 Min 70 Max -0.3 Max -1.2 Max 5 TYP 50 Max 0.3 Unit V mA Max 1.5 Max 0.2 W kV N･m mA V V ℃/W MHz μs DC Current Gain hFE -0.01 −55°C −25°C 0°C 25°C Tc = 150°C 100°C 50°C 10 -0.001 100 1000 hFE - I C Collector Current IC [A] -0.1 2SA1880 -1 -10 -20 VCE = −2V Collector-Emitter Voltage VCE [V] Tc = 25°C -0.01 −10A −10A −7A −7A −15A −15A -1 −20A −20A -2 -2.5 0 -0.001 -0.5 -1 Base Current IB [A] -0.1 0 -0.5 -1 -1.5 −5A −5A -1.5 −3A −3A -3 -2 IC = −1A IC = −1A Saturation Voltage -2 -2.5 -3 2SA1880 Base-Emitter Voltage VBE [V] 2SA1880 Switching Time - IC 1 Switching Time tSW [µs] ts ton 0.1 tf IB1 = 0.1IC IB2 = 0.1IC VBB2 = −4V VCC = −25V Tc = 25°C 0.01 0 -2 -4 -6 Collector Current IC [A] -8 -10 2SA1880 Switching Time - Tc 1 Switching Time tSW [µs] ts ton 0.1 tf IC = −5A IB1 = −0.5A IB2 = −0.5A VBB2 = −4V R L = 5Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-5 0.1 1 10 10-4 10-3 2SA1880 Time t [s] 10-2 10-1 100 Transient Thermal Impedance 101 2SA1880 Forward Bias SOA -20 10ms 1ms 100µs -10 DC Collector Current IC [A] PT limit -1 IS/B limit -0.1 Tc = 25°C Single Pulse -0.01 -1 -10 Collector-Emitter Voltage VCE [V] -80 2SA1880 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150