SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4060 Case : MTO-3P (T20W45FX) Unit : mm 20A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO VCEO VCEX VEBO IC ICP IB IBP PT TOR ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current IEBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Transition Frequency fT Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions VEB = 5V Tc = 25℃ Conditions IC = 0.2A At rated Voltage At rated Voltage VCE = 5V, IC = 10A VCE = 5V, IC = 1mA IC = 10A IB = 2A Junction to case VCE = 10V, IC = 2A IC = 10A IB1 = 2A, IB2 = 4A RL = 15Ω, VBB2 = 4V Ratings -55～150 150 600 450 600 7 20 40 7 14 150 0.8 Unit ℃ ℃ V V Ratings Min 450 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 5 Max 1.0 Max 1.5 Max 0.83 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V mA V A A W N･m mA V V ℃/W MHz μs DC Current Gain hFE −55°C −25°C 0°C 25°C 50°C 100°C Tc = 150°C 1 0.001 10 100 0.01 1 hFE - I C Collector Current IC [A] 0.1 2SC4060 10 VCE = 5V 40 Collector-Emitter Voltage VCE [V] 2A 5A 10A 10A 1 20A 20A 30A 30A 10 14 2.5 Tc = 25°C 0 0.01 0.5 1 0.1 Base Current IB [A] 0 0.5 1 1.5 5A 1.5 2A 3 2 IC = 1A IC = 1A Saturation Voltage 2 2.5 3 2SC4060 Base-Emitter Voltage VBE [V] 2SC4060 Switching Time - IC ts Switching Time tSW [µs] 1 ton 0.1 tf IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25°C 0.01 0 5 10 Collector Current IC [A] 15 20 2SC4060 Switching Time - VCC ts Switching Time tSW [µs] 1 ton 0.1 tf IC = 10A IB1 = 2A IB2 = 4A VBB2 = 4V Tc = 25°C 0.01 0 50 100 150 200 Collector Voltage VCC [V] 250 300 2SC4060 Switching Time - Tc ts 1 Switching Time tSW [µs] ton tf 0.1 IC = 10A IB1 = 2A IB2 = 4A VBB2 = 4V R L = 15Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 2SC4060 L-Load Switching Time - IC ts Switching Time tSW [µs] 1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 25°C 0.1 tf + tvs tf 0.01 0 5 10 Collector Current IC [A] 15 20 2SC4060 L-Load Switching Time - IC (At High Temperature) ts Switching Time tSW [µs] 1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCE (clamp) = 300V Tc = 100°C 0.1 tf + tvs tf 0.01 0 5 10 Collector Current IC [A] 15 20 0.01 0.1 1 10 0.001 Transient Thermal Impedance θjc(t) [°C/W] 102 103 2SC4060 Time t [µs] 104 105 Transient Thermal Impedance 106 2SC4060 40 10ms Forward Bias SOA 1ms 50µs 150µs DC PT limit Collector Current IC [A] 10 IS/B limit 1 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 450 2SC4060 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC4060 Reverse Bias SOA 40 35 Collector Current IC [A] 30 25 20 15 10 IB1 = 0.3IC IB2 = 4A VBB2 = 5V Tc < 150°C 5 0 0 100 200 300 400 500 Collector-Emitter Voltage VCE [V] 600