SHINDENGEN Switching Power Transistor OUTLINE DIMENSIONS 2SC5382 Case : FTO-220 Unit : mm 6A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Dielectric Strength Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB I BP PT Vdis TOR ●Electrical Characteristics (Tc=25℃) Item Symbol Collector to Emitter Sustaining Voltage VCEO(sus) Collector Cutoff Current ICBO ICEO Emitter Cutoff Current I EBO DC Current Gain hFE hFEL Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Saturation Voltage VBE(sat) Thermal Resistance θjc Turn on Time ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Terminals to case, AC 1 minute (Recommended torque) Conditions IC = 0.1A VCB = 1200V VCE = 550V VEB = 9V VCE = 5V, IC = 3A VCE = 5V, IC = 1mA IC = 3A IB = 0.6A Junction to case IC = 3A IB1 = 0.6A, IB2 = 1.2A RL = 50Ω, VBB2 = 4V Ratings -55∼150 150 1200 550 9 6 12 3 6 40 2 0.5(0.3) Unit ℃ ℃ V V V A Ratings Min 550 Max 0.1 Max 0.1 Max 0.1 Min 10 Min 10 Max 1.0 Max 1.5 Max 3.13 Max 1.3 Max 4.0 Max 0.3 Unit V mA A W kV N･m mA V V ℃/W μs DC Current Gain hFE −55°C 25°C 0°C −25°C 50°C 100°C Tc = 150°C 1 0.001 10 100 0.01 0.1 hFE - I C Collector Current IC [A] 2SC5382 1 10 12 VCE = 5V Collector-Emitter Voltage VCE [V] 0 0.01 Base Current IB [A] 1 6 0 0.5 0.5 2.5 1 9A 1 6A 1.5 0.1 3A 1.5 1.5A 3 2 Tc = 25°C IC = 0.5A Saturation Voltage 2 2.5 3 2SC5382 Base-Emitter Voltage VBE [V] 2SC5382 Switching Time - IC 10 ts Switching Time tSW [µs] 1 ton tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25°C 0.01 0 1 2 3 4 Collector Current IC [A] 5 6 2SC5382 Switching Time - VCC 10 ts ton Switching Time tSW [µs] 1 tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V Tc = 25°C 0.01 0 50 100 150 200 Collector Voltage VCC [V] 250 300 2SC5382 Switching Time - Tc 10 ts ton Switching Time tSW [µs] 1 tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V R L = 50Ω 0.01 0 50 100 Case Temperature Tc [°C] 150 2SC5382 Forward Bias SOA 12 10ms 10 1ms 200µs 100µs DC Collector Current IC [A] PT limit 1 IS/B limit 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Collector-Emitter Voltage VCE [V] 550 2SC5382 Collector Current Derating Collector Current Derating [%] 100 IS/B limit 80 60 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SC5382 Reverse Bias SOA 12 10 Collector Current IC [A] 8 6 4 2 0 IB1 = 0.3IC IB2 = 1.8A VBB2 = 5V Tc < 150°C 0 100 200 300 400 500 600 Collector-Emitter Voltage VCE [V] 700 800 0.01 0.1 1 10 0.001 Transient Thermal Impedance θjc(t) [°C/W] 10-4 10-3 10-2 2SC5382 Time t [s] 10-1 100 Transient Thermal Impedance 101 102