SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1027 Case : MTO-3P (T15L20) Unit : mm 15A NPN RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current DC Collector Current Peak Base Current DC Base Current Peak Total Transistor Dissipation Mounting Torque Symbol Tstg Tj VCBO VCEO VEBO IC ICP IB IBP PT TOR ●Electrical Characteristics (Tc=25℃) Item Symbol ICBO Collector Cutoff Current ICEO Emitter Cutoff Current IEBO hFE DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Thermal Resistance Transition Frequency Turn on Time VCE(sat) VBE(sat) θjc fT ton Storage Time ts Fall Time tf Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Tc = 25℃ (Recommended torque : 0.5N･m） Conditions VCB = 200V VCE = 200V VEB = 7V VCE = 3V, IC = 10A IC = 10A IB = 30mA Junction to case VCE = 10V, IC = 1.5A IC = 10A IB1 = IB2 = 30mA RL = 3Ω VBB2 = 4V Ratings -55～+150 +150 200 200 7 15 22 1 2 100 0.8 Unit ℃ ℃ V V V A A A A W N･m Ratings Max 0.1 Max 0.1 Max 5 Min 1,500 Max 30,000 Max 1.5 Max 2.0 Max 1.25 TYP 20 Max 2 Unit mA Max 8 Max 5 mA V V ℃/W MHz μs −55°C 0°C 100°C −25°C Tc = 150°C 100 0.1 1000 10000 DC Current Gain hFE 25°C 50°C hFE - I C Collector Current IC [A] 1 2SD1027 10 VCE = 3V 22 Collector-Emitter Voltage VCE [V] 1 10A 10 15A 15A 22A 22A 100 1.5 2 2.5 0 0.1 Tc = 25°C Base Current IB [mA] 0 1000 2000 0.5 7.5A 7.5A 10A 0.5 5A 5A 3 1 IC = 0.5A 1.5A IC = 0.5A 1.5A Saturation Voltage 1 1.5 2 2.5 3 2SD1027 Base-Emitter Voltage VBE [V] 2SD1027 Switching Time - IC Switching Time tSW [µs] 10 ts tf 1 ton IB1 = 0.333IC IB2 = 0.333IC VBB2 = 4V VCC = 50V Tc = 25°C 0.1 0 5 10 15 Collector Current IC [A] 20 2SD1027 ts 10 Switching Time tSW [µs] Switching Time tf 1 ton IC = 10A IB1 = 0.033A IB2 = 0.033A VBB2 = 4V Tc = 25°C 0.1 0 50 100 150 Collector Voltage VCC [V] 200 2SD1027 Switching Time - Tc ts Switching Time tSW [µs] 10 tf ton 1 IC = 10A IB1 = 0.033A IB2 = 0.033A VBB2 = 4V R L = 5Ω 0.1 0 50 100 Case Temperature Tc [°C] 150 Transient Thermal Impedance θjc(t) [°C/W] 10-2 0.1 1 10-1 2SD1027 Time t [s, ms] 0.01~10 [ms] 0.01~10 [s] 100 Transient Thermal Impedance 101 2SD1027 22 10ms Forward Bias SOA 1ms 15 10 150µs DC Collector Current IC [A] PT limit IS/B limit 1 0.1 Tc = 25°C Single Pulse 10 Collector-Emitter Voltage VCE [V] 100 200 2SD1027 Collector Current Derating Collector Current Derating [%] 100 80 60 IS/B limit 40 PT limit 20 VCE = fixed 0 0 50 100 Case Temperature Tc [°C] 150 2SD1027 Reverse Bias SOA 24 20 Collector Current IC [A] 16 12 8 4 0 IB1 = 0.002IC IB2 = 0.03A VBB2 = 5V Tc = 25°C 0 50 100 150 Collector-Emitter Voltage VCE [V] 200