SHINDENGEN VR Series Power MOSFET 2SK1931 N-Channel Enhancement type OUTLINE DIMENSIONS ( F5E20 ) Case : E-pack (Unit : mm) 200V 5A FEATURES ● Applicable to 4V drive. ● The static Rds(on) is small. ● Built-in ZD for Gate Protection. APPLICATION ● DC/DC converters ● Power supplies of DC 12-24V input ● Product related to Integrated Service Digital Network RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（ DC） IS Total Power Dissipation PT Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Ratings -55∼150 150 200 ±30 5 10 5 20 Unit ℃ V A W VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff 2SK1931 ( F5E20 ) Conditions ID = 1mA, VGS = 0V VDS = 200V, VGS = 0V VGS = ±30V, VDS = 0V ID = 2.5A, VDS = 10V ID = 2.5A, VGS = 10V ID = 1mA, VDS = 10V IS = 2.5A, VGS = 0V junction to case VGS = 10V, ID = 5A, VDD = 150V VDS = 10V, VGS = 0V, f = 1MHZ ID = 2.5A, VGS = 10V, RL = 40Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 200 Typ. Max. 250 ±0.1 0.9 2 1.8 0.45 3 11 360 45 190 55 75 Unit V μA S Ω V 0.65 4 1.5 6.25 ℃/Ｗ nC pF 110 150 ns 2SK1931 Transfer Characteristics 10 Tc = −55°C Drain Current ID [A] 8 25°C 100°C 150°C 6 4 2 0 VDS = 10V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 Static Drain-Source On-state Resistance RDS(ON) [Ω] 2SK1931 Static Drain-Source On-state Resistance 1 ID = 2.5A 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK1931 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK1931 Safe Operating Area 10 Drain Current ID [A] 100µs 200µs R DS(ON) limit 1 1ms 10ms 100ms 0.1 DC Tc = 25°C Single Pulse 1 10 100 Drain-Source Voltage VDS [V] Transient Thermal Impedance θjc(t) [°C/W] 10-4 0.1 1 10 10-3 2SK1931 10-2 Time t [s] 10-1 Transient Thermal Impedance 100 2SK1931 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss Crss 10 Tc=25°C TYP 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK1931 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150