SHINDENGEN VZ Series Power MOSFET 2SK2489 ( F10S18VZ ) N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 180V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. APPLICATION ● DC/DC converters ● Power supplies of DC 12-24V input ● Product related to Integrated Service Digital Network RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（DC） IS Total Power Dissipation PT Single Pulse Avalanche Current Tch = 25℃ IAS Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Ratings -55∼150 150 180 ±30 10 20 10 45 10 Unit ℃ V A W A VZ Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time 2SK2489 ( F10S18VZ ) Conditions ID = 1mA, VGS = 0V VDS = 180V, VGS = 0V VGS = ±30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 150V, VGS = 10V, ID = 10A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 20Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 180 Typ. Max. 250 ±0.1 3.0 2.0 7.0 0.17 3.0 25 720 80 280 50 140 Unit V μA S 0.25 Ω 4.0 V 1.5 2.77 ℃/Ｗ nC pF 100 280 ns 2SK2489 Transfer Characteristics 20 Tc = −55°C 25°C 100°C Drain Current ID [A] 15 150°C 10 5 0 VDS = 10V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2489 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [mΩ] 1000 ID = 5A 100 10 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2489 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2489 Safe Operating Area 100 Drain Current ID [A] 10 100µs R DS(ON) limit 200µs 1ms 1 10ms DC Tc = 25°C Single Pulse 0.1 1 10 Drain-Source Voltage VDS [V] 100 180 0.01 0.1 1 10 0.001 10-4 Transient Thermal Impedance θjc(t) [°C/W] 10-3 10-2 2SK2489 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK2489 Capacitance Capacitance Ciss Coss Crss [pF] 10000 1000 Ciss Coss 100 Crss Tc=25°C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK2489 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 Gate Charge Characteristics 200 20 150 15 VDD = 150V 100V 50V 100 10 VDS VGS 50 5 ID = 10A 0 0 10 20 30 Gate Charge Qg [nC] 40 50 0 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] 2SK2489