SHINDENGEN HVX-2 Series Power MOSFET 2SK2663 N-Channel Enhancement type OUTLINE DIMENSIONS ( F1E90HVX2 ) Case : E-pack (Unit : mm) 900V 1A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 240V input ● High voltage power supply ● Inverter RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（DC） IS P T Total Power Dissipation Repetitive Avalanche Current IAR Single Avalanche Energy EAS Repetitive Avalanche Energy EAR Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Pulse width≦10μs, Duty cycle≦1/100 Tch = 150℃ Tch = 25℃ Tch = 25℃ Ratings -55∼150 150 900 ±30 1 2 1 10 1 10 1 Unit ℃ V A W A mJ 2SK2663 ( F1E90HVX2 ) HVX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = ±30V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 1A VDS = 25V, VGS = 0V, f = 1MHZ ID = 0.5A, VDD = 150V, RL = 300Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 900 Typ. Max. 250 ±0.1 0.6 2.5 1.0 10.5 3.0 10.5 230 5 23 10 50 Unit V μA S Ω V 14 3.5 1.5 12.5 ℃/Ｗ nC pF 18 85 ns 2SK2663 Transfer Characteristics 2 Tc = −55°C 25°C Drain Current ID [A] 1.5 100°C 150°C 1 0.5 VDS = 25V TYP 0 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK2663 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 100 ID = 0.5A 10 1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2663 Gate Threshold Voltage 6 Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK2663 Safe Operating Area 10 Drain Current ID [A] 1 100µs 200µs R DS(ON) limit 0.1 1ms 10ms DC 0.01 Tc = 25°C Single Pulse 0.001 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 100 10-3 10-2 2SK2663 Time t [s] 10-1 100 Transient Thermal Impedance 101 2SK2663 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 100 80 60 40 20 0 0 50 100 Starting Channel Temperature Tch [°C] 150 2SK2663 Capacitance 1000 Capacitance Ciss Coss Crss [pF] Ciss 100 Coss 10 Crss f=1MHz Ta=25°C TYP 1 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 Single Avalanche Current IAS [A] 0.1 0.1 1 10 1 2SK2663 EAR = 1mJ Inductance L [mH] IAS = 1A 10 EAS = 10mJ VDD = 100V VGS = 15V → 0V Rg = 100Ω Single Avalanche Current - Inductive Load 100 2SK2663 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK2663 Gate Charge Characteristics 500 20 400 VGS 15 VDD = 400V 200V 300 100V 10 200 5 100 ID = 1A TYP 0 0 5 10 Gate Charge Qg [nC] 15 0 20 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS