SHINDENGEN VX-2 Series Power MOSFET 2SK3009 (F8S60VX2) N-Channel Enhancement type OUTLINE DIMENSIONS Case :: STO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small. ● The switching time is fast. ● Avalanche resistance guaranteed. APPLICATION ● Switching power supply of AC 100-200V input ● Inverter ● Power Factor Control Circuit RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID Continuous Drain Current（Peak) IDP Continuous Source Current（ DC） IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch = 25℃ Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Conditions Ratings -55∼150 150 600 ±30 8 16 8 60 8 Unit ℃ V A W A VX-2 Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranｓconductance Static Drain-Source On-ｓtate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage θjc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff 2SK3009 ( F8S60VX2 ) Conditions ID = 1mA, VGS = 0V VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V ID = 4A, VDS = 10V ID = 4A, VGS = 10V ID = 1mA, VDS = 10V IS = 4A, VGS = 0V junction to case VGS = 10V, ID = 8A, VDD = 400V VDS = 10V, VGS = 0V, f = 1MHZ ID = 4A, VGS = 150V, RL = 37.5Ω Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Min. 600 Typ. Max. 250 ±0.1 2.4 2.5 5.5 0.9 3 42 1130 85 245 55 195 Unit V μA S Ω V 1.2 3.5 1.5 2.08 ℃/Ｗ nC pF 80 290 ns 2SK3009 Transfer Characteristics 24 Tc = −55°C 25°C Drain Current ID [A] 20 16 100°C 12 150°C 8 4 0 VDS = 25V pulse test TYP 0 5 10 15 Gate-Source Voltage VGS [V] 20 2SK3009 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [Ω] 10 ID = 4A 1 0.1 VGS = 10V pulse test TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK3009 Gate Threshold Voltage Gate Threshold Voltage VTH [V] 5 4 3 2 1 0 VDS = 10V ID = 1mA TYP -50 0 50 100 Case Temperature Tc [°C] 150 2SK3009 Safe Operating Area 100 Drain Current ID [A] 10 100µs 200µs R DS(ON) limit 1 1ms 10ms DC 0.1 Tc = 25°C Single Pulse 0.01 1 10 100 Drain-Source Voltage VDS [V] 1000 Transient Thermal Impedance θjc(t) [°C/W] 0.01 10-4 0.1 1 10 10-3 10-2 2SK3009 Time t [s] 10-1 100 Transient Thermal Impedance 101 102 2SK3009 Capacitance Capacitance Ciss Coss Crss [pF] 10000 Ciss 1000 Coss 100 Crss Tc=25°C TYP 10 0 20 40 60 80 Drain-Source Voltage VDS [V] 100 2SK3009 Power Derating 100 Power Derating [%] 80 60 40 20 0 0 50 100 Case Temperature Tc [°C] 150 2SK3009 Gate Charge Characteristics 500 20 400 15 VGS VDD = 400V 200V 300 100V 10 200 5 100 ID = 8A 0 0 20 40 60 Gate Charge Qg [nC] 80 0 100 Gate-Source Voltage VGS [V] Drain-Source Voltage VDS [V] VDS