SHINDENGEN Schottky Rectifiers (SBD) SBD Bridges OUTLINE DIMENSIONS D4SBS6 Case : 3S (Unit : mm) 60V 4A FEATURES ● Thin Single In-Line Package ● SBD Bridge ● Low VF APPLICATION ● Switching power supply ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load With heatsink Peak Surge Forward Current Repetitive Peak Surge Reverse Power Dielectric Strength Mounting Torque IFSM PRRSM Vdis TOR Tc=114℃ 50Hz sine wave, R-load Without heatsink Ta=46℃ 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 ℃ Pulse width 10μs, Rating of per diode, Tj=25℃ Terminals to case, AC 1 minute （Recommended torque：0.5N･m） ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage I =2A, Pulse measurement, Rating of per diode VF F Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode θjc junction to case With heatsink Thermal Resistance θjl junction to lead Without heatsink θja junction to ambient Without heatsink Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40∼150 150 60 65 4 2.3 60 330 2 0.8 Unit ℃ ℃ V V A A W kV N･m Ratings Unit Max.0.62 V Max.2 mA TYP 180 pF Max.5.5 Max.6 ℃/W Max.30 D4SBS6 Forward Voltage Forward Current IF [A] 10 1 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 10 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 D4SBS6 f=1MHz Tc=25°C TYP per diode D4SBS6 Reverse Current 1000 Tc=150°C [MAX] 100 Reverse Current IR [mA] Tc=150°C [TYP] Tc=125°C [TYP] 10 Tc=100°C [TYP] Tc=75°C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 D4SBS6 Reverse Power Dissipation Reverse Power Dissipation PR [W] 20 DC D=0.05 0.1 15 0.2 0.3 10 0.5 5 SIN 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T D4SBS6 Forward Power Dissipation 8 DC Forward Power Dissipation PF [W] 7 D=0.8 6 SIN 0.5 0.3 5 0.2 0.1 4 0.05 3 2 1 0 0 1 2 3 4 5 6 7 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T D4SBS6 Derating Curve Average Rectified Forward Current IO [A] 8 Heatsink Tc 120 140 Tc 7 DC 6 5 4 D=0.8 0.5 SIN 0.3 3 0.2 2 0.1 0.05 1 0 80 90 100 110 130 Case Temperature Tc [°C] Sine wave R-load with heatsink 150 160 D4SBS6 Derating Curve Average Rectified Forward Current IO [A] 5 PCB 4 DC Glass-epoxy substrate Soldering land 5mmφ D=0.8 3 0.5 2 SIN 0.3 0.2 0.1 1 0 0.05 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air 140 160 D4SBS6 Peak Surge Forward Capability IFSM 100 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied Peak Surge Forward Current IFSM [A] 80 60 40 20 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP