SHINDENGEN Square In-line Package Bridge Diode OUTLINE DIMENSIONS S25VB20 Case : S25VB Unit : mm 200V 25A RATINGS ● Absolute Maximum Ratings Item Symbol Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage IO 50Hz sine wave, R-load Average Rectified Forward Current Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque Conditions With heatsink, Tc=85℃ 50Hz sine wave, R-load Without heatsink, Ta=40℃ IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ I2t 1ms≦t＜10ms Ｔc=25℃ Vdis Terminals to case, AC 1 minute TOR （Recommended torque : 1N･m） ● Electrical Characteristics (Tc=25℃) Item Symbol Conditions VF IF=12.5A, Pulse measurement, Rating of per diode Forward Voltage IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current θjc junction to case Thermal Resistance Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings Unit -40～150 ℃ 150 ℃ 200 V 25 A 6 400 A 800 A2ｓ 2 kV 2 N･m Ratings Unit Max.1.05 V Max.10 μA Max.1.5 ℃/W S25VBx Forward Voltage Forward Current IF [A] 100 Tc=150°C [TYP] 10 Tc=25°C [TYP] Pulse measurement per diode 1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 S25VBx Forward Power Dissipation Forward Power Dissipation PF [W] 60 50 SIN 40 30 20 10 0 0 5 10 15 20 25 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 30 S25VBx Derating Curve Average Rectified Forward Current IO [A] 30 * θfa = 1.0°C/W 25 20 15 10 without heatsink 5 0 0 20 40 60 80 100 120 Ambient Temperature Ta [°C] Sine wave R-load Free in air * with thermal compound, TOR=10kg-cm 140 160 S25VBx Peak Surge Forward Capability IFSM 500 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied Peak Surge Forward Current IFSM [A] 400 300 200 100 0 1 2 5 10 20 Number of Cycles [cycles] 50 100