PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Applications Product Description Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.7 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.7 dB between amplifier output and antenna tm input in class 1 Bluetooth applications. The amplifier features: Features an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. +22.7 dBm at 45% Power Added Efficiency Low current 80mA typical @ Pout=+20 dBm Temperature stability better than 1dB Power-control and Power-down modes Single 3.3 V Supply Operation Temperature Rating: -40C to +85C 8 lead Exposed Pad MSOP Plastic Package An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423MB operates at 3.3V DC. At typical output power level (+22.7 dBm), its current consumption is 125 mA. Ordering Information Type PA2423MB Package 8 - MSOP The silicon/silicon-germanium structure of the PA2423MB – and its exposed-die-pad package, soldered to the system PCB – provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent. Shipping Method Tape and reel Tubes -samples PA2423MB-EV Evaluation kit Functional Block Diagram V CTL Bias Generator IN Stage 1 GND DOC# 05PDS001 Rev 9 Interstage Match V CC1 07/26/2001 V CC0 V RAMP Ramp Circuitry Stage 2 OUT/ V CC2 GND Page 1 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Pin Out Diagram – top view VCTL 1 VRAMP 2 Die Pad 8 OUT/VCC2 7 NC NC 3 6 VCC1 IN 4 5 VCC0 Ground Pin Out Description Pin No. Name Description 1 VCTL 2 VRAMP 3 NC No connection 4 IN Power amplifier RF input, external input matching network with DC blocking is required 5 VCCO Bias supply voltage 6 VCC1 Stage 1 collector supply voltage, external inter-stage matching network is required 7 NC Controls the output level of the power amplifier. An analog control signal between 0V and Vcc varies the PA output power between minimum and maximum values Enable/Disable the power amplifier. A digital control signal with Vcc logic high (power up) and 0V logic low (power down) is used to turn the device on and off. No connection 8 OUT/VCC2 Die Pad GND DOC# 05PDS001 PA Output and Stage2 collector supply voltage, external output matching network with DC blocking is required Heatslug Die Pad is ground Rev 9 07/26/2001 Page 2 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Absolute Maximum Ratings Symbol Parameter Min. Max. Unit VCC Supply Voltage -0.3 +3.6 V VCTL Control Voltage -0.3 VCC V VRAMP Ramping Voltage -0.3 VCC V IN RF Input Power TA Operating Temperature Range TSTG Storage Temperature Range Tj Maximum Junction Temperature +8 dBm -40 +85 °C -40 +150 °C +150 °C Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. DC Electrical Characteristics Conditions: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2dBm,TA =25°C, f = 2.45GHz, Input and Output externally matched to 50Ω ,unless otherwise noted. Symbol Note VCC Supply Voltage ICC 1 ∆ICCtemp 3 VCTL ICTL VRAMP Istby Parameter Typ. Max. Unit 3 3.3 3.6 V 125 150 mA Supply Current (ICC = IVCC0 + IVCC1 +I VCC2), VCTL = 3.3V Supply Current variation over temperature from TA = 25°C 25 (-40°C <TA <+85°C) PA Output Power Control Voltage Range 1 Current sourced by VCTL Pin 3 Logic High Voltage 3 Logic Low Voltage 1 Leakage Current when Vramp = 0V, Vctl = high DOC# 05PDS001 Min. Rev 9 0 200 % VCC V 250 µA 2.0 07/26/2001 V 0.5 0.8 V 10 µA Page 3 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information AC Electrical Characteristics Conditions Symbol fL-U Pout ∆Ptemp dPOUT /dVCTL VCC0 = VCC1 = VCC2 = VRAMP =3.3V, VCTL = 3.3V, PIN =+2 dBm, TA =25°C, f =2.45 GHz, Input and Output externally matched to 50Ω, unless otherwise noted. Note Parameter 3 Frequency Range 1 Output Power @ PIN =+2 dBm, VCTL = 3.3V 1 Output Power @ PIN =+2 dBm, VCTL =0.4V 3 Output Power variation over temperature (-40°C <TA <+85°C) 3 Control Voltage Sensitivity PAE Min. Typ. 2400 21 Max. Unit 2500 MHz 22.7 23.5 dBm -20 0 dBm 1 2 dB 120 dBm/V Power Added Efficiency at +22.5 dBm Output Power 45 % GVAR 3 Gain Variation over band (2400-2500 MHz) 0.7 1.0 dB 2f, 3f, 4f, 5f 3,4 Harmonics -35 -30 dBc IS21 IOFF 2 Isolation in “OFF” State, PIN = +2dBm, VRAMP = 0V 20 25 dB IS12I 2 Reverse Isolation 32 42 dB STAB 2 Stability (PIN = +2dBm, Load VSWR = 6:1) All non-harmonically related outputs less than -50 dBc Notes: (1) Guaranteed by production test at TA =25°C. (2) Guaranteed by design only (3) Guaranteed by design and characterization (4) Harmonic levels are greatly affected by topology of external matching networks. DOC# 05PDS001 Rev 9 07/26/2001 Page 4 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Typical Performance Characteristics Test Conditions using SiGe PA2423MB-EV: VCC00=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25°C, f = 2.45GHz, Input and Output externally matched to 50Ω, unless otherwise noted. Icc vs Frequency Pout vs Frequency Supply Current (mA) Output Power (dBm) 140.00 23 130.00 22 120.00 21 110.00 20 100.00 19 90.00 18 17 80.00 16 70.00 15 2.3 2.3 2.4 2.4 2.5 2.5 2.6 2.6 60.00 2.7 2.3 Frequency (GHz) 2.3 2.4 2.4 2.5 2.5 2.6 2.6 2.7 Frequency (GHz) PAE vs Input Power Output Power, Gain vs Input Power (Frequency=2.45GHz) 50 20 25.00 15 20.00 10 15.00 5 10.00 0 40 PAE (%) 30.00 Gain (dB) Output Power (dBm) 45 25 35 30 25 20 15 10 5 0 -28 -24 -20 -16 -12 -8 -4 0 4 8 Input Power(dBm) 5.00 -28 Pout Gain -24 -20 -16 -12 -8 -4 0 4 8 Input Power (dBm) DOC# 05PDS001 Rev 9 07/26/2001 Page 5 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Output Pow er vs Control Voltage 150 23 142 22 134 21 126 20 118 19 110 18 102 17 94 16 86 15 78 14 Output Power (dBm) 24 Suply current (mA) Output Power (dBm) Pout, Icc vs Supply Voltage 25 20 15 10 5 0 -5 -10 -15 -20 -25 0.4 0.9 1.4 2.6 Pout 2.8 Icc 3 3.2 3.4 2.4 2.9 3.4 Vctl(V) 70 2.4 1.9 3.6 Pin=-4dBm Pin=+2dBm Vcc(V) Pin=0dBm RF Output Power vs Frequency Supply Current vs. Control Voltage 25 20 120 100 80 60 40 20 0 0.4 0.9 1.4 1.9 2.4 2.9 3.4 RFout power (dBm) Supply current (mA) 30 140 Vctl(V) Pin=-4dBm Pin=+2dBm 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 Pin=0dBm -50 0 1 2 3 4 5 6 7 8 9 10 11 Frequency (GHz) 12 13 14 15 PA output spectrum with BT modulated signal RF Output Power (dBm) into 50R 30 20 10 0 -10 -20 -30 -40 -50 -60 2.4475 2.4485 2.4495 2.4505 2.4515 2.4525 Frequency (GHz) DOC# 05PDS001 Rev 9 07/26/2001 Page 6 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information Package Dimensions The PA2423MB is packaged in a 3.0 mm x 3.0 mm 8 lead MSOP package. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below. DOC# 05PDS001 Rev 9 07/26/2001 Page 7 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information MSOP 8 PCB Footprint Layout Applications Information For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423MB. The order part number is PA2423MB-EV. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 05AN005 provides the supporting information for using the evaluation board. It contains information on the schematic, bill of materials and recommended layout for the power amplifier and the input and output matching networks. To assist in the design process, this layout is available, upon request, in gerber file format. In addition, a new optimized layout is available which reduces the number of components used. It achieves this reduction by using printed inductors on the PCB. This layout is available as a gerber file to aid in a quick design cycle. The application note, 05AN008, provides information on this space optimized layout. Using VRAMP VRAMP is a digital pin used to power-up and power-down the PA2423MB in Time Duplex systems such as Bluetoothtm 1.1. During receive mode, VRAMP voltage is pulled down, PA2423MB acts as a 25 dB isolation block between the radio and the antenna while consuming a modest 1uA. In transmit mode, VRAMP voltage is pulled to VCC and PA2423MB offers 19 dB to 21dB of large signal gain. The rise and fall time are in the order of 1-2usec. Using VCTL VCTL is an analog pin that is designed to control the gain of PA2423MB. Applying a voltage between 0V and Vcc will adjust the gain between -15dB and 21 dB. Used in combination with a variable drive level to DOC# 05PDS001 Rev 9 07/26/2001 Page 8 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information PA2423MB, the VCTL function can greatly optimize the PAE of the system at all four Bluetoothtm transmitted power levels. By applying approximately 1.4V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with the PA2423MB consuming only 15mA. By implementing a resistor DAC, the VCTL pin can interface with Bluetoothtm transceivers offering digital and programmable outputs. DOC# 05PDS001 Rev 9 07/26/2001 Page 9 of 10 PA2423MB 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information http://www.sige.com Headquarters: Canada Phone: +1 613 820 9244 Fax: +1 613 820 4933 2680 Queensview Drive Ottawa ON K2B 8J9 Canada [email protected] U.S.A. United Kingdom 19925 Stevens Creek Blvd. Suite 135 Cupertino, CA 95014-2358 1010 Cambourne Business Park Cambourne Cambridge CB3 6DP Phone: +1 408 973 7835 Fax: +1 408 973 7235 Phone: +44 1223 598 444 Fax: +44 1223 598 035 Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. The Bluetooth trademarks are owned by Bluetooth SIG Inc., USA. Copyright 2001 SiGe Semiconductor All Rights Reserved DOC# 05PDS001 Rev 9 07/26/2001 Page 10 of 10