SIGE SE2529L-EK1

SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Applications
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ƒ
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ƒ
Product Description
The SE2529L is a 2.4GHz, Silicon Germanium power
amplifier designed for use in the 2.4GHz ISM band for
wireless LAN and cordless telephone applications.
DSSS 2.4GHz WLAN (IEEE 802.11b)
OFDM 2.4GHz WLAN (IEEE 802.11g)
Access Points, PCMCIA, PC cards
2.4GHz cordless telephones
For wireless LAN applications, the device meets the
system requirements of IEEE802.11g and delivers
approximately +19dBm, at an EVM of 2.5%, while
achieving an adjacent channel power of better than –
26dBc @ 11MHz offset. The SE2529L meets this
performance and output power while adhering to the
FCC 15.209 restricted band requirements.
For
IEEE802.11b, the SE2529L delivers approximately
+23dBm @ ACPR = -32dBc.
Features
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ƒ
ƒ
ƒ
ƒ
Delivers industry leading output power:
+19dBm, 802.11g, 54 Mbps, EVM = 2.5%
+23dBm, 802.11b, ACPR < -32dBc
+25dBm CW P1dB at 3.3V
Superior harmonic performance, No band pass
filter required allowing for a lower BOM
31dB Gain
Exceptional temperature stability
Small plastic package, 12 pin QFN
The
SE2529L
typically
achieves
harmonic
performance of -65dBc with the recommended
discrete integrated output match and low pass filter,
thus not requiring an expensive and larger band pass
filter.
Ordering Information
Type
SE2529L
SE2529L-R
SE2529L-EK1
Package
Remark
12 - 4x4mm QFN
12 - 4x4mm QFN
Samples
Tape and Reel
Evaluation Kit
Functional Block Diagram
V0
IN
Vb 1
Vb 2
Vb 3
Current
Mirror
Current
Mirror
Current
Mirror
I/S
Match
Stage 1
VCC1
Stage 2
I/S
Match
Stage 3
OUT/VCC3
V CC2
Figure 1: SE2529L Functional Block Diagram
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Pin Out Diagram
GND
VCC2
VCC1
GND
11
12
GND
OUT/VCC3
8
2
IN
GND
7
3
Vb1
Die Pad
4
7
1
VCC0
3
9
5
Vb1
GND
Vb2
OUT/VCC3
10
VCC2
10
8
6
2
Vb3
IN
5
GND
Vb2
9
4
1
VCC0
GND
6
VCC1
11
SE2529L
Bottom View
Vb3
GND
12
SE2529L
Top View
Figure 2: SE2529L Pin-Out Diagram
Pin Out Description
Pin No.
Name
Note
Description
1
GND
2
IN
3
Vb1
4
VCC0
5
Vb2
1
Stage 2 bias
6
Vb3
1
Stage 3 bias
7
GND
8
OUT/ VCC3
9
GND
Ground
10
VCC2
Stage 2 collector supply
11
VCC1
Stage 1 collector supply
12
GND
Ground
Die Pad
GND
Exposed die pad; electrical and thermal ground
Ground
Power amplifier RF input
1
Stage 1 bias
Bias supply voltage
Ground
PA output and Stage 3 collector supply voltage; external output matching
network with DC feed required.
Notes: (1) Pin for injecting bias current – refer to SiGe Semiconductor’s applications support for optimum values
for particular applications.
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Equivalent Circuit Diagram
V CC1
V CC2
OUT/V CC3
IN
bias
VCC 0
Die Pad / Gnd
Vb 1
Vb 2
Vb 3
Figure 3: SE2529L Equivalent Circuit Diagram
Evaluation Board Equivalent Circuit Diagram
IN
I /P
Match
O /P
Match
SE2529L
Vb b
OUT/VCC3
VCC
Figure 4: SE2529L Evaluation Board Block Diagram
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected
workstations.
Symbol
Definition
Min.
Max.
Unit
VCC
Supply Voltage on VCC0, VCC1, VCC2 and OUT/VCC3
-0.3
+3.6
V
Vbb
Bias Voltage (Vb1, Vb2, Vb3)
-0.3
+3.6
V
IN
RF Input Power
+8
dBm
TA
Operating Temperature Range
-40
+85
°C
Storage Temperature Range
-40
+150
°C
+150
°C
Min.
Max.
Unit
TSTG
Tj
Maximum Junction Temperature
Recommended Operating Conditions
Symbol
Parameter
VCC
Supply Voltage (VCC0, VCC1, VCC2, OUT/VCC3)
3.0
3.6
V
TA
Ambient Temperature
-40
85
°C
DC Electrical Characteristics
802.11g DC Electrical Characteristics
Conditions: VCC = 3.3V, Vbb = 2.9V TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation
board, unless otherwise noted. “802.11g” mode, circuit tuning/biasing optimized for “g” full rate signal.
Symbol
Parameter
Note
Min.
Typ.
Max.
Unit
175
200
225
mA
ICC
Supply Current (POUT = 19 dBm, 54 Mbps
OFDM signal, 64QAM)
1
∆IccTEMP
Supply Current variation over temperature
from TA = 25°C (-40°C < TA < +85°C)
1
±10
%
Notes: (1) ICC refers to the total current into VCC0, VCC1, VCC2 and OUT/Vcc3
802.11b DC Electrical Characteristics
Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, as measured on SiGe Semiconductors SE2529L-EV1 evaluation
board, unless otherwise noted. “802.11b” mode, circuit tuning/biasing optimized for “g” full rate signal.
Symbol
ICC
∆IccTEMP
Parameter
Note
Min.
Typ.
Max.
Unit
Supply Current (POUT = 23dBm, 11Mbps
CCK signal)
1
240
280
305
mA
Supply Current variation over temperature
from TA = 25°C (-40°C < TA < +85°C)
1
±10
%
Notes: (1) ICC refers to the total current into VCC0, VCC1, VCC2 and OUT/Vcc3
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
AC Electrical Characteristics
802.11G AC Electrical Characteristics
Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, f = 2.45GHz, with RF tuning optimized for 802.11g mode operation.
Symbol
Parameter
fL-U
Frequency Range
P1dB
1dB Compressed CW Output Power
S21
Small Signal Gain (with output match and
harmonic filter included)
∆S21
Note
Typ.
2400
1
Gain Variation over band (2400-2485 MHz)
2f,3f,4f,5f
Min.
Max.
Unit
2500
MHz
23.5
25
28
dBm
28
31
37
dB
1.0
2.0
dB
Harmonics
2
-65
-55
dBc
S21OFF
Forward Gain when PA is off,
PIN ≤ 2dBm
3
-35
-30
dB
ACPR
Adjacent Channel Power Ratio (@ 19 dBm)
@ ±11MHz offsets from carrier
@ ±20MHz offsets from carrier
@ ±30MHz offsets from carrier
4
Error Vector Magnitude (@ 19dBm)
5
2.5
%
Restricted band spectral power (@ 19dBm)
6
-43
dBm/Mhz
EVM
P/1MHz
STAB
Stability (PIN ≤ 2dBm, Load VSWR = 6:1)
VSWR
Tolerance to output load mismatching
-30
-42
-52
dBc
All non-harmonically related outputs less than
-50 dBc/100kHz
10:1 (No damage)
Notes: (1)
(2)
(3)
(4)
Matching networks optimized for 802.11g mode operation.
With 802.11g OFDM signal at +19dBm output power.
Device in standby mode by applying Vb1, Vb2 and Vb3 < 1 V.
ACPR offsets are measured at stated offsets from center of channel. Measured with spectrum analyzer
settings of 100kHz (RBW) and 30kHz (VBW).
(5) EVM measured on Agilent 89611A PSA/VSA analysis system.
(6) FCC restricted bands exist at 2310-2390 MHz and 2483.5-2500 MHz.
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
802.11b Electrical Characteristics
Conditions: VCC = 3.3V, Vbb = 2.9V, TA = 25°C, f = 2.45GHz, 802.11 mode b operation, measured on SiGe
Semiconductors SE2529L-EV1 evaluation board
Symbol
Parameter
Note
Min.
fL-U
Frequency Range
2400
P1dB
1dB Compressed CW Output Power
23.5
S21
Small Signal Gain
28
∆S21
2f,3f,4f,5f
S21OFF
ACPR
Gain Variation over band (2400-2485 MHz)
Typ.
Max.
Unit
2500
MHz
25
28
dBm
31
37
dB
1.0
2.0
dB
Harmonics
1
-65
-55
dBc
Forward Gain when PA is off,
PIN ≤ 2dBm
2
-35
-30
dB
Adjacent Channel Power Ratio (@ 23dBm)
@ ±11MHz offsets from carrier
@ ±22MHz offsets from carrier
3
-35
-52
-30
-50
dBc
STAB
Stability (PIN ≤ 2dBm, Load VSWR = 6:1)
VSWR
Tolerance to output load mismatching
All non-harmonically related outputs less than
-50 dBc/100kHz
10:1 (No damage)
Notes: (1) With 802.11b CCK signal at +23dBm output power.
(2) Device in standby mode by applying Vb1, Vb2 and Vb3 < 1.0 V.
st
nd
(3) ACPR offsets are measured at ±1 side lobes and ±2 side lobes from center carrier. Measured with
spectrum analyzer settings of 100kHz (RBW) and 30kHz (VBW).
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Typical Performance Characteristics
The graphs below represent the performance of the SE2529L on the SE2529L-EV1 evaluation board that is matched
for optimal full-rate 54Mbps, 802.11g EVM performance. Vbb set point (2.9V) is also chosen for optimum 802.11g
mode performance levels.
Harmonics vs Output Power
CW Input Power Sweep
Pout [dBm]
Icc [mA]
2H
30
15
250
10
Harmonics (dBc)
20
325
175
5
0
-23
-21
-19
-17
-15
-13
-11
-9
-7
-60
-65
-70
-80
16
-5
18
Input Power (dBm)
3.3 V
22
24
802.11G ACPR vs. Output Power
3.6 V
ACPR-g11
7
-20
6
-25
ACPR-g20
ACPR-g30
-30
ACPR (dBc)
5
EVM (%)
20
Output Power (dBm)
802.11G EVM (%) vs. Output Power
3.0 V
5H
-75
100
-25
4H
-55
400
ICC (mA)
Pout (dBm)
25
3H
-50
475
4
3
-35
-40
-45
2
-50
1
-55
-60
0
14
15
16
17
18
19
20
21
12
22
13
14
15
Output Power (dBm)
3.3 V
17
18
19
20
802.11B ACPR-CH2 vs. Output Power
802.11B ACPR-CH1 vs. Output Power
3.0 V
16
Output Power (dBm)
3.0 V
3.6 V
3.3 V
3.6 V
-35
-26
-40
-30
ACPR (dBc)
ACPR (dBc)
-28
-32
-34
-45
-50
-55
-36
-60
-38
-40
19
20
21
22
23
Output Power (dBm)
63-DST-01 ƒ Rev 2.0 ƒ Nov 9/03
24
25
26
-65
19
20
21
22
23
24
25
26
Output Power (dBm)
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Package Information
Figure 5: SE2529L Package Information
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
Tape and Reel Information
Figure 6: SE2529L Tape and Reel Information
Branding Information
Part Number
("SE" prefix removed)
SiGe
2529L
XXXXX
Company Name
Lot Number
Figure 7: Branding Information
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SE2529L
RangeCharger™ 2.4GHz Power Amplifier
http://www.sige.com
Headquarters: Canada
Phone: +1 613 820 9244
Fax:
+1 613 820 4933
2680 Queensview Drive
Ottawa ON K2B 8J9 Canada
[email protected]
San Diego
United Kingdom
Phone: +1 858 668 3541
Fax:
+1 858 668 3546
South Building, Walden Court
Parsonage Lane, Bishop’s Stortford
Hertfordshire CM23 5DB
Hong Kong
Phone: +44 1279 464 200
Fax:
+44 1279 464 201
Phone: +852 2491 8637
Fax:
+852 2491 8937
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification.
Final
The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change
information at any time without notification. Production testing may not include testing of all parameters.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor Inc.
TM
TM
TM
TM
RangeCharger , StreamCharger , PointCharger , and LightCharger
are trademarks owned by SiGe Semiconductor Inc.
Copyright 2003 SiGe Semiconductor
All Rights Reserved
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