1T405A Variable Capacitance Diode Description The 1T405A is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). High capacitance ratio (C25/C28) is improved to support guard band. Features • Super-small-miniature flat package • Low series resistance 0.85 Ω Max. • Large capacitance ratio 12.5 Typ. 1.03 Min. • Small leakage current 10 nA Max. • Capacitance deviation within 2 % M-290 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 34 • Operating temperature Topr –20 to +75 • Storage temperature Tstg –65 to +150 (f=470 MHz) (C2/C25) (C25/C28) (VR=28 V) V °C °C Applications Electronic tuning of VHF band and wide-band CATV tuners Structure Silicon epitaxial planar type diode Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 C25/C28 rs ∆C (Ta=25 °C) Conditions VR=28 V IR=1 µA VR=2 V, f=1 MHz VR=25 V, f=1 MHz Min. 38.96 2.96 Unit nA V pF pF CD=14 pF, f=470 MHz 0.85 Ω VR=2 to 25 V, f=1 MHz 2 % 34 32.96 2.53 12.0 1.03 Typ. Max. 10 12.5 The continuous 20 pieces of ∆C are guaranteed. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E97109-TE 1T405A Diode capacitance vs. Reverse voltage Reverse current vs. Ambient temperature 100 1000 Ta=25°C, f=1MHz VR=28V 20 10 IR-Reverse current (pA) C-Diode capacitance (pF) 50 5 2 1 1 2 5 10 20 VR-Reverse voltage (V) 50 100 100 10 1 –20 Reverse current vs. Reverse voltage 10000.00 IR-Reverse current (pA) 1000.00 AAA AAA AAA Ta=80°C 100.00 Ta=60°C AAA 10.00 Ta=25°C 1.00 1 10 VR-Reverse voltage (V) 100 —2— 0 20 40 60 Ta-Ambient temperature (°C) 80 1T405A Reverse voltage vs. Ambient temperature Forward voltage vs. Ambient temperature 0.80 45 IR=10µA VR-Reverse voltage (V) VF-Forward voltage (V) IF=1mA 0.70 0.60 0.50 –20 0 20 40 60 Ta-Ambient temperature (°C) 35 30 –20 80 Diode capacitance vs. Ambient temperature 80 Thermal coefficient of diode capacitance 1.04 1000 f=1MHz f=1MHz 1.03 VR=1V VR=2V 1.02 VR=7V VR=15V VR=25V 1.01 1.00 0.99 Thermal coefficient (ppm/°C) C (Ta) / C (25°C)-Diode capacitance 0 20 40 60 Ta-Ambient temperature (°C) 100 0.98 0.97 –20 0 20 40 60 Ta-Ambient temperature (°C) 10 80 1 —3— 10 VR-Reverse voltage (V) 100 1T405A Package Outline Unit : mm 0.2 M A M-290 0.2 ± 0.05 10° MAX 1.7 ± 0.1 1.3 ± 0.1 A 0.8 ± 0.1 c b 10° MAX 0.7 ± 0.1 BASE METAL WITH PLATING c 0.11 ± 0.005 + 0.05 0.11 – 0.01 b 0.3 ± 0.025 0.05 0.3 –+ 0.02 PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER JEDEC CODE PACKAGE WEIGHT 0.002g SONY CODE M-290 MARK 1 S5 2 —4— 1 : Cathode 2 : Anode