3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.) at 800MHz • High gain: Ga = 20dB (typ) at 800MHz • High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 8 • Gate 1 to source voltage VG1S –6 • Gate 2 to source voltage VG2S –6 • Drain current ID 80 • Allowable power dissipation PD 150 • Channel temperature Tch 150 • Storage temperature Tstg –55 to +150 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Y12-PS 3SK165A Electrical Characteristics (Ta = 25°C) Item Symbol Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Input capacitance Feedback capacitance Noise figure Associated gain Min. VDS = 8V VG1S = –4V VG2S = 0V VG1S = –4V IG1SS VG2S = 0V VDS = 0V VG2S = –4V IG2SS VG1S = 0V VDS = 0V VDS = 5V IDSS VG1S = 0V VG2S = 0V VDS = 5V VG1S (OFF) ID = 100µA VG2S = 0V VDS = 5V VG2S (OFF) ID = 100µA VG1S = 0V VDS = 5V ID = 10mA gm VG2S = 1.5V f = 1kHz VDS = 5V Ciss ID = 10mA VG2S = 1.5V Crss f = 1MHz VDS = 5V NF ID = 10mA VG2S = 1.5V Ga f = 800MHz Typ. Max. Unit 100 µA –20 µA –20 µA 20 55 mA –1 –4 V –1 –4 V IDSX Drain cut-off current Forward transfer admittance Condition 15 16 22 ms 0.5 1.0 pF 7.5 25 fF 1.2 2.5 dB 20 dB ∗ IDSS classification Product name classification IDSS RANK 3SK165A-0 20 to 55mA 3SK165A-1 20 to 35mA Typical Characteristics (Ta = 25°C) ID vs. VDS ID vs. VG1S 50 50 (VG2S = 1.5V) (VDS = 5V) VG1S = 0V 40 ID – Drain current [mA] ID – Drain current [mA] 40 –0.2V –0.4V 30 –0.6V –0.8V 20 –1.0V 10 –1.2V 0 –1.4V –1.6V –1.8V 0 2 4 6 VDS – Drain to source voltage [V] VG2S = 1.5V 1.0V 0.5V 30 0V 20 –0.5V –1.0V 10 –1.5V 0 –2.0 8 –2– –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] 0 3SK165A ID vs. VG2S gm vs. VG1S 50 50 (VDS = 5V) gm – Forward transfer admittance [ms] (VDS = 5V) VG1S = 0V –0.2V –0.4V –0.6V –0.8V 30 20 –1.0V 10 –1.2V 40 VG2S = 1.5V 30 20 1.0V 0.5V 10 0V –0.5V –1.0V –1.4V 0 –2.0 –1.5 –1.0 –0.5 VG2S – Gate 2 to source voltage [V] 0 –2.0 0 –1.5 –1.0 –0.5 VG1S – Gate 1 to source voltage [V] NF vs. VG1S Ga vs. VG1S 6 30 (VDS = 5V, f = 800MHz) (VDS = 5V, f = 800MHz) VG2S = 0.5V 25 VG2S = 1.5V 4 Ga – Gain [dB] NF – Noise figure [dB] 5 1.0V 3 1.5V 2 20 1.0V 15 0.5V 10 1 5 0 –2.0 –1.8 –1.6 –1.4–1.2 –1.0–0.8 –0.6 –0.4–0.2 0 0.2 VG1S – Gate 1 to source voltage [V] 0 –2.0–1.8 –1.6 –1.4–1.2–1.0–0.8 –0.6 –0.4–0.2 0 0.2 VG1S – Gate 1 to source voltage [V] NF, Ga vs. ID NF, Ga vs. f 30 3.0 NFmin – Minimum noise figure [dB] (VDS = 5V, VG2S = 1.5V, ID = 10mA) 25 2.5 20 15 1.5 NF 1.0 10 0.5 5 Ga – Gain [dB] Ga 2.0 0 0 0 2 4 40 3.0 (VDS = 5V, VG2S = 1.5V, f = 800MHz) NF – Noise figure [dB] 0 35 2.5 2.0 Ga 25 1.5 1.0 NFmin 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 f – Frequency [GHz] –3– 20 15 0.5 0 6 8 10 12 14 16 18 20 22 ID – Drain current [mA] 30 Ga – Gain [dB] ID – Drain current [mA] 40 3SK165A S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) S11 S21 (Z0 = 50Ω) S12 S22 f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.999 0.998 0.991 0.984 0.980 0.970 0.964 0.956 0.949 0.938 0.927 0.911 0.898 0.882 0.868 0.856 0.838 0.824 0.809 0.792 –1.8 –3.7 –5.7 –7.8 –10.0 –12.2 –14.1 –16.1 –17.9 –19.7 –21.3 –22.8 –24.4 –25.8 –27.4 –29.0 –30.2 –31.5 –32.9 –34.1 2.110 2.105 2.097 2.094 2.083 2.070 2.058 2.048 2.039 2.021 2.008 1.990 1.973 1.954 1.941 1.928 1.901 1.888 1.865 1.846 176.7 173.0 169.7 166.4 162.7 159.5 156.1 152.8 149.4 146.0 142.8 139.6 136.3 133.3 130.0 126.8 123.7 120.6 117.3 114.1 0.001 0.002 0.004 0.004 0.005 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.011 0.011 0.011 0.011 0.012 0.012 0.013 0.013 73.3 91.6 80.5 85.0 84.9 84.7 83.2 82.5 82.0 78.1 84.4 76.7 77.8 80.9 80.0 80.5 74.3 79.2 80.6 79.5 0.970 0.968 0.965 0.963 0.961 0.958 0.958 0.958 0.958 0.958 0.954 0.953 0.950 0.949 0.947 0.947 0.946 0.945 0.942 0.941 –0.7 –1.6 –2.4 –3.2 –4.2 –4.9 –5.8 –6.7 –7.3 –8.3 –9.0 –9.6 –10.5 –11.2 –12.1 –12.9 –13.9 –14.5 –15.3 –15.9 Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) NFmin (dB) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.72 0.75 0.81 0.84 0.90 0.94 0.98 1.02 1.07 1.13 1.17 1.22 1.26 1.31 1.38 1.42 1.48 1.52 1.57 Gamma Optimum ANG MAG Rn (Ω) 0.97 0.95 0.93 0.91 0.88 0.86 0.84 0.83 0.81 0.80 0.79 0.78 0.78 0.77 0.77 0.77 0.76 0.76 0.75 4.4 6.4 8.2 9.9 11.4 12.8 14.2 15.5 16.7 17.9 19.1 20.3 21.5 22.8 24.2 25.6 27.1 28.8 30.6 63.7 63.0 62.2 61.5 60.7 59.9 59.1 58.4 57.6 56.8 56.0 55.2 54.3 53.5 52.7 51.9 51.0 50.2 49.3 –4– 3SK165A Unit: mm M-254 2.9 ± 0.2 1.9 ( 0.95 ) ( 0.95 ) 0.6 + 0.2 1.1 – 0.1 4 2.8 ± 0.2 2 3 + 0.2 1.6 – 0.1 Package Outline 0 to 0.1 1 + 0.1 0.4 – 0.05 + 0.1 0.6 – 0.05 ( 0.95 ) + 0.1 0.10 – 0.01 ( 0.85 ) 1.8 1. Source 2. Gate1 3. Gate2 4. Drain SONY CODE M-254 PACKAGE MASS EIAJ CODE JEDEC CODE –5– 0.01g