SONY CXA1829N

CXA1829N
8ch. Read/Write Amplifier for Thin Film Heads of Hard Disk Drive
For the availability of this product, please contact the sales office.
Description
The CXA1829N is a Read/Write amplifier for hard
disk drive thin-film heads and is designed to handle
up to 8-channel heads.
Features
• Operates on a single 5V power supply.
• Low power consumption.
Read: 115 mW
Write (IW = 15 mA): 160 mW + IW × 5
Power Save: 7 mW
• Write current can be varied through an external
resistor. Built-in stabilizer circuit provides stable
current, preventing voltage and temperature drift.
• Drives up to 8 heads.
• Supports thin film heads or 2-pin MIG heads.
• Emitter follower-type Read amplifier features 290
times gain (typ.).
• Write-unsafe detection circuit.
• Damping resistance is switched at Write (315 Ω).
• Simultaneous Write function.
• Supply voltage monitor circuit prohibits error
writing during power surge or abnormal voltage.
• IC protection circuit for head-to-ground short circuit
protection.
• Differential input capacitance at Read: 14 pF (typ.).
• Write data input minimum pulse width: 10 ns
• Read data output in Write mode becomes a high
impedance due to the improved Read data offset
when Write is switched to Read.
• Non-selected head DC voltage falls to GND level.
30 pin SSOP (Plastic)
Absolute Maximum Ratings (Ta=25°C)
• Supply voltage
VCC
7.0
V
• Write current
IW
20
mAo-p
• Operating temperature Topr –20 to +75
°C
• Operating temperature at Simultaneous Write
Topr –20 to +30
°C
• Storage temperature
Tstg –55 to +150
°C
• Allowable power dissipation
PD
480
mW
Recommended Operating Conditions
• Supply voltage
VCC 5V±10%
V
Structure
Bipolar silicon monolithic IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E94433A49-TE
CXA1829N
Block Diagram and Pin Configuration
GND
1
H0X
2
H0Y
3
H1X
4
H1Y
5
30
GND
29
PS
28
R/W
27
WC
26
RDY
25
RDX
24
HS0
23
HS1
22
HS2
POWER
ON/OFF
DETECTOR
21
VCC
T - FF
20
WDI
WRITE
UNSAFE
DETECTOR
19
WUS
WRITE
SERVO
18
WSER
17
H7X
16
H7Y
DRIVER
MODE
AMP
CONTROL
WRITE
CURRENT
SOURCE
DRIVER
AMP
AMP
H2X
6
H2Y
7
DRIVER
AMP
HEAD
H3X
8
DRIVER
SELECT
H3Y
9
H4X
10
H4Y
11
H5X
12
AMP
DRIVER
AMP
DRIVER
H5Y
13
H6X
14
H6Y
15
AMP
IC
PROTECTOR
DRIVER
DRIVER
AMP
AMP
—2—
CXA1829N
Pin Description
No.
Symbol
1, 30
2, 3
4, 5
6, 7
8, 9
10, 11
12, 13
14, 15
16, 17
GND
H0X, H0Y
H1X, H1Y
H2X, H2Y
H3X, H3Y
H4X, H4Y
H5X, H5Y
H6X, H6Y
H7X, H7Y
19
Equivalent circuit
Description
VCC
10
2
12
4
14
6
16
8
11
3
13
5
15
7
17
9
GND connection.
Head input.
8 channels provided.
330
2k
2k
330
200k
GND
WUS
Write-unsafe detection output.
Open collector output. When it is
high in Write mode, an error is
detected.
VCC
19
GND
20
WDI
VCC
Write data input.
When high changes to low, input
is triggered.
20
2.1V
1.4V
GND
21
VCC
22
23
24
HS2
HS1
HS0
VCC
5 V power supply.
Head select signal input. Eight
heads are selected as shown in
Table 2.
22
23
100k
24
28
R/W
29
PS
2.1V
GND
VCC
Read/Write signal input.
Read at high; Write at low.
28
Power save signal input.
Power save at high.
29
2.1V
GND
—3—
CXA1829N
No.
Symbol
18
WSER
Equivalent circuit
Description
VCC
100k
Simultaneous Write signal input.
Set to low for simultaneous Write
mode.
18
2.1V
GND
25
26
RDX
RDY
VCC
Read amplifier output.
Becomes a high impedance at
Write.
25
26
GND
27
WC
VCC
27
1.25V
GND
—4—
A setting resistor for the Write
current value is connected
between this pin and GND.
CXA1829N
Electrical Characteristics (unless otherwise specified, VCC = 5 V, Ta = 25°C, Write current IW = 15 mA)
Refer to Measurement Circuit 1.
Item
Current consumption for
Read
Current consumption for
Write
Current consumption for
Servo
Current consumption for
Power save
Digital low input voltage
Symbol
Measurement conditions
Measurement
point
Min.
Typ.
Max.
17
23
33
24
32
45
+IW
+IW
+IW
71
91
111
+4×IW
+4×IW
+4×IW
0.8
1.4
2.0
IR
R/W="H"
E
IW
R/W="L"
E
ISE
WSER="L"
E
IP
PS="H"
E
B
VIL
F
VIH
mA
0.8
D
Digital high input voltage
Unit
V
2.0
G
Digital low input current
Digital high input current
Write-unsafe output
saturation voltage
Write-unsafe output leak
current
Power ON/OFF detector
threshold voltage
Write current setting
range
Write current accuracy
Read amplifier differential
voltage gain
Bandwidth (-3 dB)
Input conversion noise
voltage
Common mode rejection
ratio
IL
IH
VWUS
H
High applied voltage: 5 V
Low applied voltage: 0 V
Output current: 1 mA
IWUS
µA
J
70
C
0.5
V
C
10
µA
4.3
V
VCC
VTH
-70
I
A
3.6
3.9
IW
Current flowing between head pins.
A
5
15
mAo-p
∆Iw
When Write current is IW [mA], then:
K
___
(Rw:Ω),
IW=
Rw
Refer to Fig. 12 (Characteristics) for K.
A
-8
8
%
K
245
335
V/V
60
AV
Input voltage SG1:1mVp-p,300kHz
BW
Frequency at which Av drops by 3dB
K
EN
Head impedance: 0 Ω
K
CMRR
290
Load resistance (RDX, RDY): 1kΩ
In-phase input voltage SG2:100mVp-p,
10 MHz
—5—
K
MHz
0.55
50
77
0.7
nV
√Hz
dB
CXA1829N
Refer to Measurement Circuit 1.
Item
Symbol
Measurement conditions
Measurement
point
Min.
Typ.
K
45
55
Max.
Unit
Ripple voltage SG3: 5 V ± 100 mVp-p,
Supply voltage rejection
ratio
10 MHz
PSRR When Read amplifier output is Vp
(mVp-p), then: PSRR = 20 log (100/Vp)
+ 20 log Av
dB
Selected head input voltage: 0 mVp-p
Non-selected head input voltage SG1:
Channel separation
CS
100 mVp-p, 10 MHz
When Read amplifier output is Vcs
K
45
55
(mVp-p), then: CS = 20 log (100/Vcs) +
20 log Av
Non-selected head voltage
Non
selected
VHUS
head
—6—
0.2
V
CXA1829N
Unless otherwise specified, VCC = 5 V, Ta = 25 °C, fWD (Write data frequency) = 5 MHz, IW = 15 mA, LH (head
inductance) = 1 µH, RH (head DC resistance) = 30 Ω
Refer to Measurement Circuit 2 and Timing Chart.
Item
Symbol
Measurement conditions
Min.
Typ.
Head differential
voltage amplitude
VSW
Potential difference between HX and
HY pins when Write current is
switched.
4.4
5.2
Write-unsafe detection
maximum frequency
FWUS
FWUS is the Write data frequency
when WUS pin is high in Write mode.
Mode switching time
Read to Write
TRW
Mode switching time
Read to Simultaneous
Write
TRS
Mode switching time
Write to Read
TWR
Mode switching time
Safe to Unsafe
TSA1
Mode switching time
Unsafe to Safe
TSA2
Mode switching time
Power save to Read
TPR
Head switching time
TH
Write current
propagation delay time
TPD
Write current rise/fall
time
TR/TF
Time required for Write current to
reach 90% after Read mode is
switched to Write mode.
Time required for Write current to
reach 90% after Read mode is
switched to Simultaneous Write
mode.
Time required for Write current to
reach 10% after Write mode is
switched to Read mode.
Time required for WUS pin to
become high after the Write data is
stopped in Write mode.
Time required for WUS pin to
become low after the Write data is
input in Write mode.
Time required for RD output to reach
90% after Power Save mode is
switched to Read mode.
Time required for RD output to reach
90% when the selected head is
changed in Read mode.
LH = 0, RH = 0
Time required for Write current to
reach 90% after the Write data falling
edge.
LH = 0, RH = 0
T R is the time required for Write
current to reach 90% from 10%; TF is
the time required for it to reach 10%
from 90%.
—7—
280
Max.
Unit
Vp-p
1000
kHz
0.6
0.6
0.6
µs
3
7
11
1.0
1.0
0.6
16
30
ns
5
10
CXA1829N
Measurement Circuit 1
1k
×1
1k
AMP
K
VCC
5V
5V
A
SG3
E
1µ
1µ
II
J
H
G
F
D
C
B
20
19
18
H3Y
H4X
H4Y
H5X
H5Y
H6X
H6Y
3
4
5
6
7
8
9
10
11
12
13
14
15
H7Y
WSER
WDI
H7X
HS1
H3X
2
WUS
HS0
H2Y
1
VCC
RDX
16
H2X
17
RDY
21
H1Y
22
WC
23
H1X
24
R/W
25
H1Y
26
PS
27
H0X
28
GND
29
GND
30
HS2
10k
A
A
SG2
SG1
Measurement Circuit 2
1k
×1
1k
VCC
5V
AMP
1µ
1µ
H6Y
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
1µH
1µH
1µH
1µH
—8—
1µH
1µH
H7X
H6X
WSER
H5Y
WUS
H5X
WDI
H4Y
VCC
16
H4X
17
H3Y
18
HS1
19
H3X
20
HS0
21
H2Y
22
RDX
23
H2X
24
RDY
25
H1Y
26
WC
27
H1X
28
R/W
29
H1Y
30
1µH
PG
PS
PG
H0X
PG
GND
PG
GND
PG
HS2
10k
3.9k
H7Y
K
1µH
CXA1829N
Timing Chart 1
WDI
R/W
(WSER)
50%
50%
50%
PS
TRW (TRS)
TWR
90%
90%
IWX
IWY
10%
10%
TWR
TPR
90%
RDX
RDY
90%
Fig. 3
Timing Chart 2
WDI
50%
50%
TPD
90%
IWX
IWY
90%
10%
10%
TR
WUS
90%
TF
TSA1
50%
50%
TSA2
Fig. 4
—9—
CXA1829N
Description of Functions
Read amplifier
This is a low-noise amplifier for amplifying the faint signals from the heads, and is an emitter follower output. It
outputs the signals differentially to the RDX and RDY pins, and the X side of the head and RDX pin and the Y
side of the head and RDY pin have the same polarity. RDX and RDY outputs in Write mode become high
impedance. (The outputs should be capacitor-coupled.)
Write circuit
The Write data input to the WDI pin passes through a T flip-flop where its frequency is halved. It then drives
the Write switch circuit and supplies the Write current to the heads.
The Write data is triggered at the transition from high to low and the Write current is switched.
The Write current flows from the X side when the mode changes from Read to Write.
Mode control
The modes are set as shown in Table 1 by the R/W, PS and WSER pins.
Table 1. Mode selection
R/W
L
H
X
X
X
PS
L
L
H
L
L
WSER
H
H
X
L
L
HSO
X
X
X
L
H
Mode
Write
Read
Power save
0, 2, 4, 6-head simultaneous Write
1, 3, 5, 7-head simultaneous Write
The WSER pin has a built-in pull-up resistor (100 kΩ).
Head selection
The heads are selected as shown in Table 2 by the HS0, HS1 and HS2 pins.
Table 2. Head selection
HS0
L
H
L
H
L
H
L
H
HS1
L
L
H
H
L
L
H
H
HS2
L
L
L
L
H
H
H
H
—10—
Head
0
1
2
3
4
5
6
7
CXA1829N
Write-unsafe detection circuit (refer to the “Notes on Operation.”)
This circuit detects write errors.
In normal Write mode, the WUS output is low; in the conditions listed below, it is high.
• Head input is open.
• Head input is shorted to GND or VCC.
• Write data frequency is abnormally low.
• There is no Write current.
• In Read mode
• In Power save mode
• Supply voltage is abnormal (refer to the “Power supply ON/OFF detection.”)
Power supply ON/OFF detection
This circuit monitors VCC to detect erroneous Writes.
The error status is established when VCC falls below the threshold voltage (VTH) of the power supply ON/OFF
detector, in which case the recording and playback functions are prohibited.
When VCC rises above VTH, the prohibition of these functions is released.
Application Circuit
+5V
PULSE
DETECTOR
1µ
10k
3.9k
H5Y
H6X
H6Y
5
6
7
8
9
10
11
12
13
14
15
H7X
H5X
4
WSER
H4Y
3
WUS
H4X
2
WDI
H3Y
1
VCC
HS1
H3X
H7Y
16
HS0
17
H2Y
18
RDX
19
H2X
20
RDY
21
H1Y
22
WC
23
H1X
24
R/W
25
H1Y
26
PS
27
H0X
28
GND
29
GND
30
HS2
RW
Fig. 5
Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for
any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.
—11—
CXA1829N
Notes on Operation
• This IC handles high frequency and high gain signals. Please note the following;
◊ Connect VCC decoupling capacitor of approximately 1000 pF near the IC.
◊ Make the grounding area as large as possible.
• Short-circuit the X and Y sides of unused head pins or leave them open.
• Write data pulse width
Set the pulse width to 10 ns or more at 1.5 V to prevent misoperation.
• The WC pin is a constant voltage pin. When noise affects this pin, it creates noise in Write current.
Therefore, locate Rw as close to the IC as possible.
• Write-unsafe detection circuit
The WUS detection circuit operates by voltage waveform of head pin.
1.5V
Write data waveform
T1
Voltage waveform
VFB
of head pin
VTH=2V
VTH
GND
Fig. 6
◊ Use the IC at T1 > 10 ns for normal operation of the WUS detecting circuit.
◊ Use the IC with VFB of 2V or more. If the VFB is less than 2V, the write-unsafe detection maximum
frequency may become 1 MHz or more.
◊ Please apply to the reference mentioned on this back cover since the operation range of the writeunsafe detection circuit is greatly affected by the head inductance, head DC resistance and Write
current.
• Use the IC with Ta at 30°C or less in Simultaneous Write mode.
—12—
CXA1829N
Application Notes
Use the following characteristics for reference.
Item
Write mode
Read mode
Differential
output capacitance
Differential output
resistance
Differential input
capacitance
Differential input
resistance
Output resistance
VCC=5V, Ta=25°C
Symbol Measurement conditions
C0
R0
C1
R1
RRD
Non-selected head differential
current in Write mode
IUS
Write current symmetry
TAS
Between head input
pins
Between head input
pins
Min.
235
0.7
—13—
Max.
Unit
15
pF
315
395
Ω
14
20
pF
1.4
40
RDX or RDY
LH=1µH, RH=30Ω
IW=15mA
LH=0µH, RH=0Ω
IW=15mA
Typ.
-1
kΩ
60
Ω
0.2
mAp-p
1
ns
CXA1829N
Example of Representative Characteristics
Fig. 8 Normalized Write current
vs. Ambient temperature
Fig. 7 Normalized Write current
vs. Supply voltage
VCC=5V
RW=10k Ω
1.01
Normalized Write current
Normalized Write current
Ta=25°C
RW=10k Ω
1.00
0.99
4.0
5.0
VCC-Supply voltage (V)
25
50
1.04
1.02
1.00
0.98
0.96
0.94
5.0
VCC-Supply voltage (V)
6.0
VCC=5V
Vin=1mVp-p
f=300kHz
1.06
1.04
1.02
1.00
0.98
0.96
0.94
-25
0
25
50
Fig. 12 Write current setting constant K
vs. Write current
VCC=5V
K=IW•RW
IW: mA, RW: k Ω
K-Write current setting constant
VTH ON
3.9
VTH OFF
3.8
150
148
146
144
142
140
0
25
50
75
Ta-Ambient temperature (°C)
4.0
-25
75
Fig. 10 Normalized Read amplifier differential voltage gain
vs. Ambient temperature
Fig. 11 Power supply ON/OFF detector threshold voltage
vs. Ambient temperature
Power supply ON/OFF detector threshold voltage (V)
0
Ta-Ambient temperature (°C)
Normalized Read amplifier differential voltage gain
Normalized Read amplifier differential voltage gain
0.98
-25
Ta=25°C
Vin=1mVp-p
f=300kHz
4.0
1.00
6.0
Fig. 9 Normalized Read amplifier differential voltage gain
vs. Supply voltage
1.06
1.02
75
5
Ta-Ambient temperature (°C)
—14—
10
15
IW-Write current (mA)
CXA1829N
Package Outline
Unit : mm
30PIN SSOP (PLASTIC)
+ 0.2
1.25 – 0.1
∗9.7 ± 0.1
1
7.6 ± 0.2
16
∗5.6 ± 0.1
30
0.10
A
15
+ 0.1
0.22 – 0.05
+ 0.05
0.15 – 0.02
0.65 ± 0.12
0.5 ± 0.2
0.1 ± 0.1
0° to 10°
DETAIL A
NOTE: “∗” Dimension do not include mold protrusion.
PACKAGE STRUCTURE
PACKAGE MATERIAL
EPOXY RESIN
SONY CODE
SSOP-30P-L01
LEAD TREATMENT
SOLDER/PALLADIUM
PLATING
EIAJ CODE
SSOP030-P-0056
LEAD MATERIAL
COPPER/42 ALLOY
PACKAGE WEIGHT
0.1g
JEDEC CODE
—15—