CXA2515AM/AN RF Amplifier for CD Player and CD-ROM For the availability of this product, please contact the sales office. Description The CXA2515AM/AN is an IC for RF signal processing of CD player and CD-ROM. Features • Wide-band RF amplifier. (RF signal fc ≥ 12MHz) • RF equalizer (T type) • EFM time constant can be adjusted (with switching function) • APC (Automatic Power Control) function • Power saving function • Supports laser coupler Functions • RF summing amplifier • RF equalizer • Focus error amplifier • Tracking error amplifier • APC circuit CXA2515AM 20 pin SOP (Plastic) CXA2515AN 20 pin SSOP (Plastic) Absolute Maximum Ratings • Supply voltage VCC • Storage temperature Tstg • Allowable power dissipation PD 7 V –65 to +150 °C 500 mW Operating Conditions • Supply voltage VCC – GND +3.0 to +5.5 V • Operating temperature Topr –20 to +75 °C Applications • CD players • CD-ROM drives Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96317D8Y CXA2515AM/AN Block Diagram VCC 1.25V LD 1 10k 55k 25 40k 56k PD 2 VC BUFFER APC 19 MODE 40k 10k 56k VCC NC 3 VCC PD1 4 17 RF_M BGR 10k 2k PD2 5 VC RF Summing Amp VC 348k VC 6 18 VCC Standby 20k 10k 16 BPF_SW 15 LPF_SW RF Drive Amp 348k GND 7 20 APC_ON 1k 10k 32k 32k 14 RFO_1 VC Focus Error Amp E 8 13 RFO_2 174k 11p 5p F 9 Tracking Error Amp 12 FE 73.4k TE1 10 VC 320k Tracking Drive Amp –2– 11 TE CXA2515AM/AN Pin Description Pin No. Symbol I/O Equivalent circuit Description 10k 1 LD O 2 PD I 1k APC amplifier output. 1 55k 8k APC amplifier input. 2 10k 3 NC No connection. 10k 10k 20k 124 4 5 PD1 PD2 I I 4 Input of RF summing amplifier and focus error amplifier. 32k 32k 124 348k 5 174k 348k VC 120 6 VC 25 6 O 120 7 VC GND (VCC + GND) / 2 DC voltage output. Ground. –3– CXA2515AM/AN Pin No. Symbol I/O Equivalent circuit Description 124 124 8 8 9 10 11 E F TE1 TE I I O O 9 320k 124 124 11 10 73.4k Tracking error amplifier input for Pins 8 and 9; tracking error amplifier output for Pin 10; tracking error drive output for Pin 11. 348k 12 13 FE RFO_2 348k O Focus error amplifier output for Pin 12. 124 12 124 O 13 14 1k 14 17 RFO_1 RF_M O I 124 17 14 2k Buffer switch output which sets the RF signal time constant. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. Non-inversion input of RF drive amplifier for Pin 17; RF signal output for Pin 14; resistance value connected between Pins 14 and 17 which determines the low frequency gain of RF drive amplifier. 124 15 15 LPF_SW O 124 17 –4– Transistor switch output which sets the LPF cut-off frequency of RF amplifier. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. CXA2515AM/AN Pin No. Symbol I/O Equivalent circuit Description 124 16 16 BPF_SW O VC 18 VCC VCC. 50k 124 19 MODE I 19 50k 20 APC_ON Transistor switch output which sets the RF amplifier BPF boost. OFF when Pin 19 is connected to VCC, ON when it is connected to GND. I 20 100k –5– 30k Multiple-speed mode switching input. VCC : High multiple-speed mode GND: Low multiple-speed mode APC amplifier ON/OFF switching. OFF when connecting to VCC; ON when connecting to GND. –6– G2-1 G2-2 Voltage gain 1 Voltage gain 2 F2-1 F2-2 V2-2 V2-3 Frequency response 2 Maximum output amplitude H Maximum output amplitude L 19 20 18 17 Frequency response 1 16 15 14 Voltage gain difference G2-3 V2-1 Offset voltage 13 O O O O O O O O 300mV 300mV 0V –300mV 300mV V1-3 O 2.0V 12 14 13 14 13 14 –3 G2-1 to G2-2 DC voltage measurement DC voltage measurement — 1.9 –4 17.7 V1 = 100mVpp, f = 1kHz V1 = 100mVpp, f = 20kHz Difference for G2-2 17.7 V1 = 100mVpp, f = 1kHz –4 –50 DC voltage measurement V1 = 100mVpp, f = 20kHz Difference for G2-1 — 1.3 DC voltage measurement DC voltage measurement –3 Maximum output amplitude L 12 O –2.0V V1 = 100mVpp, f = 4MHz Difference for G1-2 V1-2 O –3 Maximum output amplitude H 11 O 2.0V V1 = 100mVpp, f = 12MHz Difference for G1-1 F1-2 O Frequency response 10 O F1-1 16.5 Frequency response 9 –2.0V V1 = 100mVpp, f = 100kHz O O G1-3 16.5 Voltage gain 8 –2.0V V1 = 100mVpp, f = 100kHz O O G1-2 14 16.5 Voltage gain 7 2.0V V1 = 100mVpp, f = 100kHz O O G1-1 –50 Pin DC current measurement 13 Voltage gain 6 –2.0V V1-2 Offset voltage 5 –50 Pin DC current measurement 14 –2.0V 0V V1-1 Offset voltage 4 — Pin DC current measurement 18 2.0V 300mV Istb Standby current –12 Pin DC current measurement 3 — Min. Pin DC current measurement 18 7 –2.0V E4 300mV E3 300mV 2.0V E2 IEE RF amplifier FE amplifier –2.3 2.4 — — 0 20.7 20.7 0 –1.3 2.3 — — 20.3 20 20 100 25 1.45 –6.3 6.3 Typ. –1.9 — — — 3 23.7 23.7 50 –0.3 — — — 23.3 23 23 300 150 3 — 12 Max. V V dB dB dB dB dB mV V V dB dB dB dB dB mV mV mA mA mA Unit (Ta = 25°C, VCC = 2.5V, GND = VC, VEE = –2.5V) MeasureDescription of output waveform ment and measurement method point Current consumption 0V E1 Bias conditions 2 S1 S2 S3 S4 SW conditions ICC Symbol Current consumption Measurement item 1 Measurement No. Electrical Characteristics CXA2515AM/AN –7– 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 TE amplifier APC VC Measurement No. 69mV 0V V4-1 V4-2 V4-3 V4-4 V4-5 Offset voltage 1 Offset voltage 2 Offset voltage 3 Offset voltage 4 Offset voltage 5 V5-1 177mV V3-3 Maximum output amplitude L Offset voltage 123mV V3-2 Maximum output amplitude H O F3-4 Frequency response 4 0V 300mV O 300mV O F3-3 Frequency response 3 O F3-2 Frequency response 2 F3-1 O 2.0V 1 11 V1 = 100mVpp, f = 1kHz V1 = 100mVpp, f = 1kHz DC voltage measurement 17.9 17.9 –50 Min. 2.0V –2.0V –2.0V 6 –4 V1 = 100mVpp, f = 200kHz Difference for G3-2 –0.1 — I1 = 0.8mADC, DC voltage measurement DC voltage measurement 1.8 0.8 –1.2 — — DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement DC voltage measurement 1.9 –4 V1 = 100mVpp, f = 200kHz Difference for G3-1 DC voltage measurement –4 V1 = 100mVpp, f = 20kHz Difference for G3-2 –4 –2.0V –2.0V E4 V1 = 100mVpp, f = 20kHz Difference for G3-1 O O 2.0V E3 Frequency response 1 G3-2 Voltage gain 2 O 0V E2 MeasureDescription of output waveform ment and measurement method point –3 G3-1 Voltage gain 1 0V E1 Bias conditions G3-1 to G3-2 V3-1 Offset voltage S1 S2 S3 S4 SW conditions Voltage gain difference G3-3 Symbol Measurement item — — 2.45 2.1 0.1 –1.6 — — — — — — 0 20.9 20.9 0 Typ. 0.1 0 — — 1.6 –0.1 –1.9 — — — — — 3 23.9 23.9 50 Max. V V V V V V V V dB dB dB dB dB dB dB mV Unit CXA2515AM/AN –8– E1 V1 S4 S3 VEE S2 S1 VEE VCC 43k 43k VEE VCC NC PD LD TE1 110k F 110k E GND 33µ VC PD2 PD1 33µ E2 I1 10 9 8 7 6 5 4 3 2 1 10k Electrical Characteristics Measurement Circuit 174k 32k 32k 10k 10k APC 55k 10k 1k Tracking Error Amp 73.4k RF Summing Amp 20k 56k Focus Error Amp 348k 348k VCC 10k 56k 1.25V 2k Tracking Drive Amp 320k 5p BGR 11p VC BUFFER Standby 25 RF Drive Amp 40k 40k VCC VCC 11 12 13 14 15 16 17 18 19 20 TE FE RFO_2 RFO_1 LPF_SW 150p BPF_SW RF_M VCC MODE APC_ON 1p 510 E3 E4 10k 10k 10k 10k 3.9k 1k CXA2515AM/AN 1µ 10µ 22 VCC –9– F IN E IN PD2 IN PD1 IN 100µ 43k 43k NC PD TE1 9 8 7 6 5 4 3 2 1 10 110k VC F 110k E GND VC PD2 PD1 500 100 LD VC 174k 32k 32k 10k 10k APC 55k 10k Tracking Error Amp 1k VC 73.4k RF Summing Amp 20k 56k Focus Error Amp 348k 348k VCC 10k 56k 1.25V 2k Tracking Drive Amp 320k 5p BGR 11p VC BUFFER VC Standby 25 RF Drive Amp 40k 40k VCC VC VCC 11 12 13 14 15 16 17 18 19 20 TE FE 30k RFO_2 RFO_1 LPF_SW BPF_SW RF_M VCC MODE APC_ON RF OUT 1000p 3.9k 1k Tracking Error Out Focus Error Out VC 4700p 1p 68p 390 13p MODE Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. 10k Application Circuit (Double-/sextuple-speed switching) CXA2515AM/AN CXA2515AM/AN Note on Operation The RF AC maximum output amplitude is 1.3Vpp when Pin 13 and 14 are capacitor-coupled shown in Application Circuit. Description of Operation RF Amplifier The signal currents from the photodiodes A, B, C and D become PD1 = A + C and PD2 = B + D by I-V converting, and they are input to Pins 4 and 5. These signals are added at the RF summing amplifier and inverted at the RF drive amplifier and then output to Pin 14. 390 68p 3.9k 1k 4.9k RF_ M A RFO 14 17 LPF_SW 15 20k C PD1 I-V B PD2 I-V 10k 4 5 2k 10k D VC VC RF Summing Amp RF Drive Amp The low frequency component of RFO output voltage is as follows: VRFO = 20k 4.9k × × (PD1 + PD2) 10k 2k = 4.9 × (PD1 + PD2) Focus Error Amplifier The operation of (PD2 – PD1) is performed and the resulting signal is output to Pin 12. 15P 348k PD1 I-V PD2 I-V 32k FE 4 12 5 Focus Error Amp 32k 174k 15P 348k VC The low frequency component of FE output voltage is as follows: VFE = 348k × (PD2 – PD1) 32k = 10.9 × (PD2 – PD1) – 10 – 13p 1p BPF_SW 16 CXA2515AM/AN Tracking Error Amplifier The signal current from the photodiode F is I-V converted and input to Pin 9 via an input resistor. The signal current from the photodiode E is I-V converted, and input to Pin 8 after its gain is adjusted by the volume. These signals undergo operational amplification at the tracking error amplifier and tracking drive amplifier, and are output to Pin 12. 11P 5P VC 320k 62k E 73.4k 8 100k I-V TE VC F 43k 12 9 I-V 110k TE1 10 The low frequency component of TE output voltage is as follows: VTE = 110k 320k × × (F – E) 43k 73.4k = 11.1 × (F – E) Center Voltage Generation Circuit The center voltage of VR = (VCC + GND) is supplied. The maximum current is approximately ±3mA. Vcc Vcc 40k Vc Buffer 25 VR 6 VC 40k APC Circuit When the laser diode is driven with constant current, the optical output possesses large negative temperature characteristics. Therefore, the current must be controlled with the monitor photodiode to ensure the output remains constant. When APC_ON pin is connected to GND, APC is ON; connected to VCC, it is OFF. VCC 100µ 56k PD 22 10k 2 1k 8k 1 55k 10k LD 56k 10k 1µ 1.25V – 11 – 10µH 100 500 CXA2515AM/AN Example of Representative Characteristics RFO_1 Frequency Response (W/O EQ) RFO_2 Frequency Response (W/O EQ) 30 20 20 GAIN [dB] GAIN [dB] 30 10 0 100k 10 1M 10M 0 100k 100M 1M FREQ. [Hz] 10M 100M FREQ. [Hz] RF_Out Frequency Response (T-EQ)∗ TE_Out Frequency Response 30 20 20 GAIN [dB] GAIN [dB] 30 10 10 MODE = LOW MODE = HIGH 0 100k MODE = LOW MODE = HIGH 0 1M 10M 100M 1k 10k FREQ. [Hz] 100k 1M FREQ. [Hz] ∗ T-EQ As shown in Application Circuit FE_Out Frequency Response APC Characteristics 2.5 30 2.0 1.5 20 LD [V] GAIN [dB] 1.0 10 0.5 0 –0.5 –1.0 0 100 1k 10k 100k –1.5 FREQ. [Hz] –2.0 0 – 12 – 100 200 PD [mV] 300 CXA2515AM/AN Package Outline Unit: mm CXA2515AM 20PIN SOP (PLASTIC) 300mil + 0.4 12.45 – 0.1 + 0.4 1.85 – 0.15 20 11 6.9 10 0.45 ± 0.1 + 0.1 0.2 – 0.05 1.27 0.5 ± 0.2 1 + 0.2 0.1 – 0.05 7.9 ± 0.4 + 0.3 5.3 – 0.1 0.15 ± 0.12 M PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY / PHENOL RESIN SONY CODE SOP-20P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE ∗SOP020-P-0300-A LEAD MATERIAL COPPER ALLOY PACKAGE WEIGHT 0.3g JEDEC CODE CXA2515AN 20PIN SSOP (PLASTIC) + 0.2 1.25 – 0.1 ∗6.5 ± 0.1 0.1 11 20 1 6.4 ± 0.2 ∗4.4 ± 0.1 A 10 0.65 b (0.15) (0.22) 0.5 ± 0.2 0.1 ± 0.1 DETAIL B : SOLDER b=0.22 ± 0.03 + 0.03 0.15 – 0.01 + 0.1 b=0.22 – 0.05 + 0.05 0.15 – 0.02 0.13 M DETAIL B : PALLADIUM NOTE: Dimension “∗” does not include mold protrusion. 0° to 10° PACKAGE STRUCTURE DETAIL A PACKAGE MATERIAL EPOXY RESIN SONY CODE SSOP-20P-L01 LEAD TREATMENT SOLDER / PALLADIUM PLATING EIAJ CODE SSOP020-P-0044 LEAD MATERIAL 42/COPPER ALLOY PACKAGE MASS 0.1g JEDEC CODE NOTE : PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame). – 13 –