CXA3238TN/CXA3239TN 6/4-channel Read/Write Amplifier for GMR-Ind Head Hard Disk Drive For the availability of this product, please contact the sales office. Description The CXA3238TN/CXA3239TN is a Read/Write amplifier for GMR-Ind (Giant Magneto ResistiveInductive) heads used in hard disk drives, and is capable of supporting up to six channels. Features • +5 V and –3 V power supply. • Current bias voltage sense type. • Drives up to six heads (CXA3238TN) • Drives up to four heads (CXA3239TN) • Low power 180 mW at Read • Differential read amplifier gain ; ×140/190 (RMR=50 Ω) • Input noise of 0.77 nV/ √ Hz (typ.), RMR=50 Ω, IB=6.0 mA. • • • • • Recovery time write to read ; 300 nsec. (typ.) Write data is triggered by differential P-ECL signal. Servo bank write. (All channels) Write unsafe detection circuit. Serial port … Head selection MR bias Write current 38 pin TSSOP (Plastic) Absolute Maximum Ratings (Ta=25 °C) • Supply voltage VCC –0.3 to +6 V • Supply voltage VEE –4.5 to +0.3 V • Digital input voltage Vdi –0.3 to VCC+0.3 V • Operating temperature Topr –20 to +70 °C • Storage temperature Tstg –55 to +150 °C • Allowable power dissipation TSSOP38 PD 1000 mW Operating Conditions • Supply voltage • MR bias voltage • Bias current • Write current VCC VEE VMR IB IW +4.4 to +5.5 V –4.0 to –2.6 V –300 to +300 mV 3 to 8 mA 15 to 45 mA Applications Hard disk drives with GMR-Ind heads. Structure Bipolar silicon monolithic IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E98346C8Y CXA3238TN/CXA3239TN Block Diagram and Pin Configuration CXA3238TN RS 1 Serial Interface SCLK 2 SDATA 3 WDX 4 Bias current source AMP 38 R5Y 37 R5X Write current source DRIVER 36 W5Y 35 W5X WD BUF 34 W4X WDY 5 VCC 6 33 W4Y GND 7 32 R4X RDY 8 DRIVER AMP 31 R4Y AMP RDX 9 AMP FLT/SE/BHV 10 30 R3Y 29 R3X R/XW 11 28 W3Y DRIVER SDEN 12 27 W3X CAP 13 26 W2X DRIVER VEE 14 25 W2Y W0X 15 24 R2X DRIVER AMP W0Y 16 R0X 17 R0Y 18 AMP AMP 23 R2Y 22 R1Y 21 R1X W1X 19 DRIVER —2— 20 W1Y CXA3238TN/CXA3239TN CXA3239TN RS 1 Serial Interface SCLK 2 SDATA 3 WDX 4 Bias current source AMP 38 R3Y 37 R3X Write current source DRIVER 36 W3Y 35 W3X WD BUF 34 W2X WDY 5 VCC 6 33 W2Y GND 7 32 R2X RDY 8 RDX 9 DRIVER AMP 31 R2Y AMP 30 W1X DRIVER FLT/SE/BHV 10 29 W1Y NC 11 28 R1X AMP NC 12 27 R1Y NC 13 AMP NC 14 26 R0Y 25 R0X 24 W0Y NC 15 DRIVER R/XW 16 23 W0X SDEN 17 22 NC CAP 18 21 NC VEE 19 20 VEE —3— CXA3238TN/CXA3239TN Pin Description Pin No. CXA3238TN Symbol Equivalent circuit Description VCC 250 1 RS Bias current setting resister is connected between this pin and GND. 1 VBGR ≈1.3V GND VEE VCC 2 3 12 SCLK SDATA SDEN 2 7.5k 3 Serial control signal input. 12 14k 2Vf GND VEE VCC 4 5 WDX WDY 100 4 Differential P-ECL write data input. 5 100 GND VEE 6 7 VCC GND 5 V power supply. Ground VCC 100 9 8 RDX RDY Read amplifier output with coupling capacitors. High impedance in the write mode. 9 8 1.8mA VEE GND —4— CXA3238TN/CXA3239TN Pin No. Symbol Equivalent circuit Description VCC 100 10k 10 FLT/SE/BHV Head unsafe detection output. Servo Bank Write Enable input. Buffered Head Voltage output. 10 GND VEE VCC 100k 11 R/XW Read / Write control signal input. Read when high, Write when low. 11 3Vf GND VEE VCC 13 CAP Connect an external capacitor of Read amplifier between this pin and VEE. 13 VEE 14 VEE 15 16 19 20 26 25 27 28 34 33 35 36 W0X W0Y W1X W1Y W2X W2Y W3X W3Y W4X W4Y W5X W5Y –3 V power supply. VCC 15 19 26 Inductive heads for Write. Six channels are provided. 27 34 35 16 20 25 28 33 36 GND VEE —5— CXA3238TN/CXA3239TN Pin No. Symbol 17 18 21 22 24 23 29 30 32 31 37 38 R0X R0Y R1X R1Y R2X R2Y R3X R3Y R4X R4Y R5X R5Y Equivalent circuit Description VCC 17 21 24 MR heads for Read. Six channels are provided. 29 32 37 18 22 23 30 31 38 VEE —6— CXA3238TN/CXA3239TN Pin Description Pin No. CXA3239TN Symbol Equivalent circuit Description VCC 250 1 RS Bias current setting resister is connected between this pin and GND. 1 VBGR ≈1.3V GND VEE VCC 2 3 17 SCLK SDATA SDEN 2 7.5k 3 Serial control signal input. 17 14k 2Vf GND VEE VCC 100 4 5 WDX WDY 4 Differential P-ECL write data input. 5 100 GND VEE 6 7 VCC GND 5 V power supply. Ground VCC 100 9 8 RDX RDY Read amplifier output with coupling capacitors. High impedance in the write mode. 9 8 1.8mA VEE GND —7— CXA3238TN/CXA3239TN Pin No. Symbol Equivalent circuit Description VCC 100 10k 10 FLT/SE/BHV Head unsafe detection output. Servo Bank Write Enable input. Buffered Head Voltage output. 10 GND VEE 11 12 13 14 15 21 22 Non Connection NC VCC 100k 16 R/XW Read / Write control signal input. Read when high, Write when low. 16 3Vf GND VEE VCC 18 CAP Connect an external capacitor of Read amplifier between this pin and VEE. 18 VEE 19, 20 VEE –3 V power supply. —8— CXA3238TN/CXA3239TN Pin No. Symbol 23 24 29 30 33 34 35 36 W0X W0Y W1Y W1X W2Y W2X W3X W3Y 25 26 27 28 31 32 37 38 R0X R0Y R1Y R1X R2Y R2X R3X R3Y Equivalent circuit Description VCC 23 24 29 Inductive heads for Write. Four channels are provided. 30 33 34 35 36 GND VEE VCC MR heads for Read. Four channels are provided. 25 26 27 28 31 32 37 38 VEE —9— CXA3238TN/CXA3239TN Electrical Characteristics (Unless otherwise specified; VCC=5 V, VEE=–3 V, Ta=25 °C, CAP=0.1 µF, RS=7.5 kΩ) No. Item Power Dissipation Symbol Measurement conditions IW=31 mA, IB=6.0 mA Min. Typ. Max. Unit ISP1 SLEEP mode 2.1 2.8 mA 1-2 IID1 IDLE mode 22 29 mA 1-3 IRE1 Read mode 36 47 mA 1-4 IWR1 Write mode 80 100 mA IID2 IDLE mode 10 13 mA 1-7 IRE2 Read mode 10 13 mA 1-8 IWR2 Write mode 10 13 mA ICCBW ICCBW=17+17×N+IW×N, IW=31 mA 300 1-1 1-6 1-9 VCC power supply current VEE power supply current Bank write mode Digital Inputs TTL input 2-1 low input voltage TTL input 2-2 high input voltage TTL input 2-3 input current Serial interface input 2-4 low input voltage Serial interface input 2-5 high input voltage Serial interface input 2-6 input current P ECL input 3-1 Voltage range P ECL input 3-2 Input amplitude 3-3 3-4 3-5 3-6 P ECL input current P ECL input high input voltage 2 P ECL input low input voltage 2 P ECL input differential voltage 2 VIL VIH ITTL VSIL VSIH IST VWDV VWDA IWD TTL input; R/XW Pull-up resister : 100 kΩ High voltage : 5 V Low voltage : 0 V Serial input; SDATA, SCLK, SDEN 0 0.8 V 2.0 VCC+ 0.3 V –100 100 µA 1 V 4 V High voltage : 5 V, Low voltage : 0 V –1000 Pull-down resister : 14 kΩ VCC –2.5 Write data input 0.3 Input voltage : 4 V VPIH mA –20 1000 µA VCC +0.3 V 1.5 V 20 µA VDD–0.2 VDD V VDD=3.3 V VPIL Vdiff 2.0 (VPIH–VPIL) × 2 —10— 400 VDD–0.5 VDD–0.3 800 1300 V mV CXA3238TN/CXA3239TN No. 4-1 4-2 Item Bank Write Enable voltage Bank Write Enable current Symbol Measurement conditions VSEH ISEH FLT output low voltage VFLTL External resistance=2.4 kΩ 5-2 FLT output high voltage VFLTH External resistance=2.4 kΩ BHV gain accuracy Read Characteristics R1 Low Gain R2 High Gain R3 R4 VBHV=VCC–4×IB×(RMR+5.5 Ω) IB=“1,1,1” RMR=50 Ω RMR=50 Ω, IB=6.0 mA [GAIN]=0 AVL RMR=50 Ω, IB=6.0 mA Low frequency cut-off (–3 dB) High frequency cut-off (–3 dB) EBHV AVH Typ. 6 5-1 6 Min. VCC +1.2 [GAIN]=1 RMR=50 Ω, IB=6.0 mA Unit 14 mA 0.8 V 4.5 V V –8 8 % 115 140 165 V/V 155 190 225 V/V 350 550 kHz FCL FCH Max. VCC +1.4 140 Exclusive of Head noise RMR=50 Ω, IB=6.0 mA 200 0.95 nV/ √ Hz R5 Input reflected noise ENI R6 MR bias current range 1 IBR1 3 8 mA R7 MR bias accuracy EIB –7 +7 % R8 MR bias resolution RIB VCC power supply rejection ratio VEE power supply R9-2 rejection ratio Common mode R10-1 rejection ratio 1 Common mode R10-2 rejection ratio 2 Control line input noise R11 rejection RDX/RDY offset difference R12 magnitude RDX/RDY output R13 impedance R9-1 0.77 MHz 3 bit DAC Ripple voltage : 100 mVp-p 100 kHz to 50 MHz Ripple voltage : 100 mVp-p PSRR2 100 kHz to 10 MHz Ripple voltage : 100 mVp-p CMRR1 100 kHz to 50 MHz Ripple voltage : 100 mVp-p CMRR2 51 MHz to 80 MHz Ripple voltage : 100 mVp-p CLRR 4 MHz to 80 MHz PSRR1 VOFF1 Write to Read RDro Differential, read mode —11— 0.714 mA 38 dB 45 dB 37 dB 27 dB 40 dB 30 50 mV 100 Ω CXA3238TN/CXA3239TN No. Item Read Safety Characteristics Symbol Measurement conditions Min. Typ. Max. Unit P1 MR head open threshold MRop Head X - Head Y 600 750 900 mV P2 MR head short threshold MRsh Head X - Head Y IB= ‘000’ to ‘011’ 15 50 90 mV Write Characteristics W1 Write current range IWR DAC code=× ‘0000’ to × ‘1111’ 15 45 mA W2 Write current accuracy EIW RH=0 Ω –7 +7 % W3 Write current resolution RIW 4 bit DAC W4 Leakage current ILEAK Unselected head W6 Damping register RD W7 Write current propagation delay time Tpd LH=0, RH=0 Write DATA to 50 % of Write current W8 Write current rise/fall time TR/TF RH=15 Ω, LH=150 nH, IW=31 mA W9 Erase current accuracy 2 320 EIE VCC=3.5 V DAC code=× ‘0101’ 420 mA 200 µA 520 Ω 10 ns 2.5 –18 ns –9 0 % 1.2 1.4 V 0.1 V 1.8 MHz 300 +T1 ns Write Safety Characteristics U1 Write head open threshold ROP Detect open head U2 Head voltage when short to GND VG Detect short to GND U3 WD frequency too low fWDL U4 Write safety detect time TWS U5 Low VCC threshold VWthL Fault detected 3.7 3.9 4.1 V U6 Low VCC threshold VWthH Fault removed 3.9 4.1 4.3 V U7 Low VCC threshold hysteresis 0.5 T1 : 2 transitions on WDX/WDY Vhys 200 —12— mV CXA3238TN/CXA3239TN No. Item Switching Characteristics Symbol Measurement conditions IW=31 mA, IB=6 mA Signal on WDX/WDY TWR 90 % RD signal or 10 % IW S1 Write to Read S2 Read to Write TRW 90 % IW S3 Idle to Read TIR 90 % RD signal Min. 90 % RD signal ,90 % IB(*1) IB="0,1,1" 90 % RD signal ,90 % IB(*1) S4-2 Sleep to Read(A3239) TSR2 IB="0,1,1" Bank Write Characteristics IW=31 mA, IB=6 mA S4-1 Sleep to Read(A3238) TSR1 Typ. Max. Unit 300 500 ns 50 70 ns 1.0 µs 600 1000 µs 600 2000 µs S5 Read to Bank Write TRB 90 % IW 100 ns S6 Bank Write to Read TBR 10 % IW 100 ns TIW 90 % IW 300 us Idle to Bank Write Idle to Write Serial port timing S7 Tsu SDEN to first SCLK (sden) Th Last SCLK to deassert SDEN (sden) 10 ns 10 ns B1 Set up time B2 Hold time B4 SCLK frequency f (sclk) B5 SCLK pulse width Tw (sclk) 10 ns Tsu (d) 10 ns Th (d) 10 ns TSL 100 ns B6 B7 B8 SCLK-SDATA set up time SCLK-SDATA hold time SDEN low time 30 (∗1) TSR is proportional to IB and external CAP value —13— MHz CXA3238TN/CXA3239TN Serial port characteristics ADR1 0 0 1 ADR0 0 1 0 DATA5 DATA4 XSLP XIDL GAIN BHV MROPN MRSHT DATA3 N/A N/A IW3 DATA2 HS2 IB2 IW2 DATA1 HS1 IB1 IW1 DATA0 HS0 IB0 IW0 ∗IB<2-0> bits are initialized by ‘0’ at power on Code Description Bit XSLP XIDL HS<2-0> GAIN BHV IB<2-0> MROPN MRSHT IW<3-0> Function “0” = Set the pre-amp into low power “sleep” mode “0” = Set preamplifier to idle mode Head select bit Set the pre-amp to high or low gain mode. “1” = Set preamplifier to high gain mode Activate the BHV test point pin. “1” active. MR bias current set “1” = Set MR head open detector active. “1” = Set MR head short detector active. Set write current —14— CXA3238TN/CXA3239TN Mode Control SLEEP XSLP=0 READ IDLE WRITE XSLP=1 XIDL=1 R/XW=H XSLP=1 XIDL=0 R/XW=X XSLP=1 XIDL=1 R/XW=L Serial Port Timing Detail TSL f (sclk) Th (sden) SDEN Tw (sclk) Tsu (sden) SCLK Th (d) Tsu (d) SDATA A1 A0 D5 D4 D3 D2 D1 D0 Serial Port Timing After the SDEN goes high, the last eight bits are transferred into the register. The SCLK will shift the data presented at the SDATA into an internal shift register on the rising edge of each clock. As SCLK initial condition, both of Low and High signal is acceptable. —15— CXA3238TN/CXA3239TN ♦ Unsafe condition 1. Write fault condition FLT is a high level in write fault condition. • Open write head leads. fWD < 15 MHz • Write head leads shorted to ground. • WD frequency is too low. • Power supply is out of tolerance. 2. Read fault condition FLT is a low level in read fault condition. • Open and short MR head. (This function is set by serial register) ♦ Bank write control (refer to ‘Bank write current vs Current accuracy’ characteristic curve) 1. Set the Read mode. 2. Force a certain voltage(min.VCC+1.2V) to FLT/SE pin by using the pull-up resister(Rse=820Ω) #This operation disables all Fault detection. 3. Set VCC at 3.5 V (in case of Erase mode only) 4. Start the write operation by setting R/XW = “L”. 5. Terminate the write operation by setting R/XW = “H”. i) Allow 50 % write duty or less. ii) Low voltage detector is disabled in Bank Write mode and Erase mode. iii) Don’t change the serial register data bits in following conditions : ∗) VCC=3.5 V ∗∗) On entering Write data ♦ BHV (Buffered Head Voltage) 1. Applicable within VCC=5 V±5 % 2. Turn BHV on,but turn off MROPN and MRSHT 3. VBHV is determined by basis of VCC. VBHV =VCC–4 × IB × (RMR+5.5 Ω) ♦ Head select table 6ch HS2 HS1 HS0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Head select, Normal operation 0 1 2 3 4 5 none none —16— CXA3238TN/CXA3239TN ♦ Head select table 4ch HS2 HS1 HS0 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 Head select, Normal operation 0 1 2 3 none none none none IB2 IB1 IB0 IB (mA) 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 3.0 3.714 4.429 5.143 5.857 6.571 7.286 8.0 ♦ MR Bias —17— CXA3238TN/CXA3239TN ♦ Write current IW3 IW2 IW1 IW0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 Write current (mA 0-P) 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 (*1) Actual head current is defined by the following equation: Ihead=Iw/ (I+Rh/Rd) Rh : Head Resistance Rd : Damping Resistance (*2) Short X-Y terminal on un-used head —18— CXA3238TN/CXA3239TN ♦ 6ch CXA3238TN 1 RS R5Y 38 2 SCLK R5X 37 3 SDATA W5Y 36 4 WDX W5X 35 5 WDY W4X 34 6 VCC W4Y 33 7 GND R4X 32 8 RDY R4Y 31 9 RDX R3Y 30 10 FLT/SE/BHV R3X 29 11 R/XW W3Y 28 12 SDEN W3X 27 13 CAP W2X 26 14 VEE W2Y 25 15 W0X R2X 24 16 W0Y R2Y 23 17 R0X R1Y 22 18 R0Y R1X 21 19 W1X W1Y 20 TSSOP 38Pin 0.5 mm pitch Package dimension including leads 6.4 × 9.7 mm —19— CXA3238TN/CXA3239TN ♦ 4ch CXA3239TN 1 RS R3Y 38 2 SCLK R3X 37 3 SDATA W3Y 36 4 WDX W3X 35 5 WDY W2X 34 6 VCC W2Y 33 7 GND R2X 32 8 RDY R2Y 31 9 RDX W1X 30 10 FLT/SE/BHV W1Y 29 11 NC R1X 28 12 NC R1Y 27 13 NC R0Y 26 14 NC R0X 25 15 NC W0Y 24 16 R/XW W0X 23 17 SDEN NC 22 18 CAP NC 21 19 VEE VEE 20 TSSOP 38Pin 0.5 mm pitch Package dimension including leads 6.4 × 9.7 mm —20— CXA3238TN/CXA3239TN Application Circuit CXA3238TN 7.5kΩ 5V 1 RS R5Y 38 2 SCLK R5X 37 3 SDATA W5Y 36 4 WDX W5X 35 5 WDY W4X 34 6 VCC W4Y 33 7 GND R4X 32 8 RDY R4Y 31 9 RDX R3Y 30 0.1µF 10 FLT/SE/BHV R3X 29 11 R/XW W3Y 28 12 SDEN W3X 27 13 CAP W2X 26 14 VEE W2Y 25 15 W0X R2X 24 16 W0Y R2Y 23 17 R0X R1Y 22 18 R0Y R1X 21 19 W1X W1Y 20 0.1µF –3V 0.1µF —21— CXA3238TN/CXA3239TN CXA3239TN 7.5kΩ 5V 1 RS R3Y 38 2 SCLK R3X 37 3 SDATA W3Y 36 4 WDX W3X 35 5 WDY W2X 34 6 VCC W2Y 33 7 GND R2X 32 8 RDY R2Y 31 9 RDX W1X 30 0.1µF 10 FLT/SE/BHV W1Y 29 11 NC R1X 28 12 NC R1Y 27 13 NC R0Y 26 14 NC R0X 25 15 NC W0Y 24 16 R/XW W0X 23 17 SDEN NC 22 18 CAP NC 21 19 VEE VEE 20 0.1µF –3V 0.1µF —22— CXA3238TN/CXA3239TN Measurement Spec.Circuit 25Ω 7.5kΩ 1 RS R5Y 38 2 SCLK R5X 37 3 SDATA W5Y 36 4 WDX W5X 35 5 WDY W4X 34 6 VCC W4Y 33 7 GND R4X 32 8 RDY R4Y 31 9 RDX R3Y 30 25Ω 180nH VCC V WDX 3300µH V1 S7 1µF 1000pF S6 VPSRR Amp1 Gain=×1 180nH V WDY R13 1k 10µF 25Ω 25Ω 0.1µF V VM1 R14 1k 25Ω VCC 2.4k 0.1µF V CXA3238TN 10 FLT/SE/BHV R3X 29 11 R/XW W3Y 28 12 SDEN W3X 27 13 CAP W2X 26 14 VEE W2Y 25 15 W0X R2X 24 16 W0Y R2Y 23 17 R0X R1Y 22 18 R0Y R1X 21 25Ω VSE Amp2 Gain=×100 180nH V R/XW 3300µH BPF 100kHz to 50MHz V VM2 10µF VPSRR’ 1µF 1kΩ S/I S7’ 180nH S6’ 0.1µF VEE 25Ω 180nH 25Ω 25Ω 25Ω 25Ω 25Ω 19 W1X W1Y 20 180nH —23— CXA3238TN/CXA3239TN 25Ω 7.5kΩ 1 RS R3Y 38 2 SCLK R3X 37 3 SDATA W3Y 36 4 WDX W3X 35 5 WDY W2X 34 6 VCC W2Y 33 7 GND R2X 32 8 RDY R2Y 31 9 RDX 25Ω 180nH VCC V WDX 3300µH V1 S7 1µF 1000pF S6 VPSRR Amp1 Gain=×1 180nH V WDY R13 1k 10µF 25Ω 25Ω 0.1µF V VM1 R14 1k VCC 2.4k 0.1µF V W1X 30 CXA3239TN 180nH 10 FLT/SE/BHV W1Y 29 11 NC R1X 28 12 NC R1Y 27 13 NC R0Y 26 14 NC R0X 25 15 NC W0Y 24 16 R/XW W0X 23 17 SDEN NC 22 18 CAP NC 21 19 VEE VEE 20 25Ω VSE Amp2 Gain=×100 25Ω BPF 100kHz to 50MHz V VM2 25Ω 1kΩ 25Ω S/I 180nH V R/XW 3300µH 10µF VPSRR’ 1µF S7’ S6’ 0.1µF VEE —24— CXA3238TN/CXA3239TN Normalized bias current vs Ambient temperature Normalized bias current vs Power supply voltage 1.04 1.04 VCC=5V VEE=–3V RMR=50Ω IBn=“100” Low gain 1.02 IB/IB (VCC=5V) IB/IB (Ta=25°C) 1.02 1 1 0.98 0.98 0.96 –25.0 0.0 25.0 50.0 0.96 3.5 75.0 4 4.5 5 5.5 VCC (V) Normalized read amplifier voltage gain vs Ambient temperature Normalized read amplifier voltage gain vs Power supply voltage 6.5 1.04 VEE=–3V RMR=50Ω IBn=“100” Low gain Ta=25°C 1.02 AV/AV (VCC=5V) 1.02 VCC=5V VEE=–3V RMR=50Ω IBn=“100” Low gain 1 1 0.98 0.98 0.96 –25.0 0.0 25.0 50.0 0.96 3.5 75.0 Ambient temperature Ta (°C) 4 4.5 5 5.5 VCC (V) Bank write current vs Current accuracy 8 Bank write current accuracy (%) 6 Ambient temperature Ta (°C) 1.04 AV/AV (Ta=25°C) VEE=–3V RMR=50Ω IBn=“100” Low gain Ta=25°C VCC=5V Ta=25°C 6 Bank Write (A3238) Bank Write (A3239) 4 RH=0Ω Read 170µs Write 30µs 2 0 –2 –4 –6 –8 10 15 20 25 30 35 Bank write current (mA) 40 45 50 Deviation of Bank write current is within ±7% at basis of the chart —25— 6 6.5 CXA3238TN/CXA3239TN Input refered noise voltage vs Ambient temperature Normalized write current vs Ambient temperature 0.82 1.04 VCC=5V VEE=–3V RMR=50Ω IBn=“100” 1.02 IW/IW (Ta=25°C) 0.8 VCC=5V VEE=–3V IWn=“1000” EN [nV/ √Hz] 0.78 0.76 1 0.98 0.74 0.96 0.72 –25.0 0.0 25.0 50.0 75.0 Ambient temperature Ta (°C) 0.7 –25.0 0.0 25.0 50.0 75.0 Ambient temperature Ta (°C) 1.04 IW/IW (VCC=5V) 1.02 VEE=–3V IWn=“1000” Ta=25°C 1 0.98 0.96 3.5 4 4.5 5 VCC (V) 5.5 6 6.5 Power supply ON/OFF detector threshold voltage (V) Normalized write current vs Power supply voltage Power supply ON/OFF detector threshold voltage vs Ambient temperature 4.15 4.1 ON→OFF OFF→ON 4.05 4 3.95 3.9 3.85 –25.0 0.0 25.0 50.0 Ambient temperature Ta (°C) —26— 75.0 CXA3238TN/CXA3239TN Unit : mm 38PIN TSSOP(PLASTIC) 1.2MAX 9.8 ± 0.2 0.1 6.4 ± 0.3 20 38 4.5 ± 0.2 1 0.5 A 19 0.225 ± 0.075 0.15 0.1 M 0.25 0.05MIN 0.5 ± 0.1 Package Outline 0° to 10° DETAIL A PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER PLATING EIAJ CODE LEAD MATERIAL COPPER ALLOY JEDEC CODE PACKAGE MASS 0.1g SONY CODE TSSOP-38P-L121 —27—