SLD302B Block-type 200mW High Power Laser Diode Description The SLD302B is a high power laser diode mounted on a 3 × 3 × 5mm Copper block. It is ideal for applications which require a minimal distance between the laser facet and external optical parts. Features • Compact size 3 × 3 × 5mm block • High power output Po = 200mW • Hole for thermistor Applications • Solid state laser excitation • Medical use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 25°C) • Optical power output • Recommended optical power output • Reverse voltage • Operating temperature • Storage temperature Po 200 Po 180 VR LD 2 Topr –10 to +50 Tstg –40 to +85 mW mW V °C °C Pin Configuration No. Function 1 LD cathode 2 LD anode 1 LD cathode 2 LD anode Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E89104A81-PS SLD302B Electrical and Optical Characteristics Item (Tc = 25°C) Symbol Conditions Min. Typ. Max. Unit 150 200 mA Threshold current Ith Operating current Iop PO = 180mW 400 500 mA Operating voltage Vop PO = 180mW 1.9 3.0 V Wavelength λp PO = 180mW 840 nm Radiation angle Perpendicular to junction (F. W. H. M.∗) Parallel to junction θ⊥ Positional accuracy Position Angle Differential efficiency 770 PO = 180mW θ// 28 40 12 17 ∆X ±300 ∆Y, ∆Z PO = 180mW ±100 ∆φ⊥ ηD ±3 PO = 180mW ∗ F. W. H. M. : Full Width at Half Maximum –2– 0.5 0.8 degree µm degree mW/mA SLD302B Example of Representative Characteristics Threshold current vs. Temperature characteristics Optical power output vs. Forward current 1000 200 Ith – Threshold current [mA] Po – Optical power output [mW] Tc = –10°C Tc = 0°C Tc = 25°C 100 Tc = 50°C 500 100 –10 0 0 250 IF – Forward current [mA] Tc = 25°C Radiation intensity (optional scale) Radiation intensity (optional scale) 40 Power depecdence of near field pattern Tc = 25°C (parallel to junction) PO = 180mW PO = 90mW PO = 30mW –20 10 20 30 Tc – Case temperature [°C] 500 Power dependence of far field pattern –30 0 –10 0 10 Angle [degree] 20 PO = 180mW PO = 150mW PO = 100mW PO = 75mW PO = 50mW PO = 25mW 50µm 30 Oscillation wavelength vs. Temperature characteristics Differential efficiency vs. Temperature characteristics 830 1.5 820 ηD – Differential efficiency [mW/mA] λp – Oscillation wavelength [nm] PO = 180mW 810 800 790 780 –10 0 10 20 30 40 1.0 0.5 50 Tc – Case temperature [°C] 0 –10 0 10 20 30 Tc – Case temperature [°C] –3– 40 50 50 SLD302B Optical power output vs. Operating current Power dependence of polarization ratio 3.0 80 Pulse width = 1µs Duty = 10% Tc = 23°C Tc = 25°C Po – Optical power output [W] 2.5 Polarization ratio 60 40 20 PULSE 2.0 1.5 1.0 CW 0.5 0 0 0 50 100 150 200 250 Pulse width dependence of COD∗ power 10 Duty = 10% TC = 23°C COD output [W] 5.0 1.0 CW 0.5 0.1 0.1 0.5 1.0 5.0 10 0 0.5 1.0 1.5 2.0 Iop – Operating current [A] Po – Optical power output [mW] 50 100 Pulse width [µs] ∗ COD (Catastrophic Optical Damage) –4– 2.5 SLD302B Power Dependence of Wavelength Relative radiant intensity Tc = 25°C Po = 80mW Relative radiant intensity Tc = 25°C Po = 40mW 800 805 810 800 Wavelength [nm] 805 810 Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 160mW Relative radiant intensity Tc = 25°C Po = 120mW 800 805 810 800 Wavelength [nm] Relative radiant intensity Tc = 25°C Po = 200mW 800 805 805 Wavelength [nm] 810 Wavelength [nm] –5– 810 SLD302B Temperature Dependence of Wavelength (PO = 180mW) Relative radiant intensity Tc = 12°C Relative radiant intensity Tc = –6°C 805 815 825 805 Wavelength [nm] 815 825 Wavelength [nm] Relative radiant intensity Tc = 35°C Relative radiant intensity Tc = 23°C 805 815 825 805 Wavelength [nm] Relative radiant intensity Tc = 45°C 805 815 815 Wavelength [nm] 825 Wavelength [nm] –6– 825 SLD302B Package Outline Unit: mm M – 261 5.0 ± 0.1 3.0 ± 0.1 1.5 0.2 1.7 0.3 Ø1.5 for Thermistor LD Chip 1.0 Ceramic 1.5 Contact Plate (LD Cathode) 0.2 1.8 3.0 ± 0.1 Body (LD Anode) PACKAGE STRUCTURE SONY CODE M-261 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –7– 1g