SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER TECHNICAL SPECIFICATION VOLTAGE: 20 TO 40V CURRENT: 3.0A FEATURES DO - 201AD • Epitaxial construction for chip • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed: 250oC/10sec/0.375"(9.5mm) lead length at 5 lbs tension MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Molded with UL-94 Class V-O recognized flame retardant epoxy • Polarity: Color band denotes cathode • Mounting position: Any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) RATINGS SYMBOL 1N5820 1N5821 1N5822 UNITS 20 30 40 VRRM Maximum Repetitive Peak Reverse Voltage 14 21 28 VRMS Maximum RMS Voltage 20 30 40 VDC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IF(AV) 3.0 (9.5mm lead length, at TL=95oC) Peak Forward Surge Current (8.3ms single IFSM 80 half sine-wave superimposed on rated load) 0.475 0.5 0.525 VF Maximum Forward Voltage (at 3.0A DC) o 2.0 Maximum DC Reverse Current Ta=25 C IR o 10.0 (at rated DC blocking voltage) Ta=100 C 250 CJ Typical Junction Capacitance (Note 1) 40 Rθ(ja) Typical Thermal Resistance (Note 2) -65 to +125 TSTG,TJ Storage and Operation Junction Temperature Note: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted V V V A A V mA mA pF o C/W o C http://www.sse-diode.com