SHANGHAI SUNRISE ELECTRONICS CO., LTD. IN4148 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 75V FORWARD CURRENT: 150mA FEATURES DO - 35 • Small glass structure ensures high reliability • Fast switching • Low leakage • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension 1.0 (25.4) MIN. .120 (3.0) .200 (5.1) .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Polarity: Color band denotes cathode • Mounting position: Any 1.0 (25.4) MIN. .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Ratings at 25oC ambient temperature unless otherwise specified) RATINGS Reverse Voltage Peak Reverse Voltage Forward Current (average) Repetitive Forward Peak Current Forward Voltage (IF=10mA) Reverse Current (VR=20V) Reverse Current (VR=75V) SYMBOL VALUE UNITS VR VRM IO IFRM VF 75 100 150 300 1 25 5 50 4 4 0.35 V V mA mA V nA µA A pF nS IR1 IR2 Reverse Current (VR=20V,TJ=100oC) Capacitance (note 1) Ct IF Reverse Recovery Time (note 2) Rθ(ja) Thermal Resistance (junction to ambient) (note 3) TSTG,TJ Operating Junction and Storage Temperature Range -55 +175 Notes: 1: VR=0V, f=1 MHz 2: IF=10mA to IR=1mA, VR=6V, RL=100 3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. o C/mW o C http://www.sse-diode.com