Preliminary Preliminary Product Description SGA-5263 Stanford Microdevices SGA-5263 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4500 MHz, Silicon Germanium Cascadeable Gain Block This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 Ohm impedance, the SGA-5263 requires only DC blocking and bypass capacitors for external components. Product Features DC-4500 MHz Operation Single Voltage Supply Low Current Draw: 60mA at 3.4V typ. High Output Intercept: 29 dBm typ. at 1950MHz Small Signal Gain vs. Frequency 15 dB 10 Applications Oscillator Amplifiers Broadband Gain Blocks IF/RF Buffer Amplifiers 5 25C -40C 85C 0 0.1 1 1.9 2.8 3.7 4.6 5.5 Frequency GHz Sy mbol Parameters: Test C onditions: Z0 = 50 Ohms, ID = 60 mA, T = 25ºC U nits Min. Ty p. Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 16.3 15.0 14.0 IP3 Thi rd Order Intercept Poi nt Power out per tone = -10 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 32.5 29.3 27.3 S 21 Small Si gnal Gai n f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 13.3 12.6 12.3 MHz 4500 P 1dB Bandwi dth S11, S22: Mi ni mum 10db Return Loss (typ.) S11 Input VSWR f = 1950 MHz - 1.2:1 S 22 Output VSWR f = 1950 MHz - 1.4:1 S 12 Reverse Isolati on f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 18.3 19.2 19.5 NF Noi se Fi gure f = 1950 MHz dB 4.0 VD D evi ce Voltage V 3.4 ºC /W 255 Rth, j-l Thermal Resi stance (juncti on - lead) Max. The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Value U nit Supply C urrent 120 mA D evi ce Voltage 6 V -40 to +85 ºC +10 dB m Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature -40 to +150 ºC +150 ºC Key parameters, at typical operating frequencies: Parameter Ty pical 25ºC Test C ondition U nit 100 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 13.6 33.6 16.1 26.0 17.7 3.9 dB dB m dB m dB dB dB 500 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 13.5 33.0 16.4 23.5 18.0 3.9 dB dB m dB m dB dB dB 850 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 13.3 32.5 16.3 21.4 18.3 4.0 dB dB m dB m dB dB dB 1950 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on Noi se Fi gure 12.6 29.3 15.0 20.2 19.2 4.0 dB dB m dB m dB dB dB 2400 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 12.3 27.3 14.0 23.0 19.5 dB dB m dB m dB dB 3500 MH z Gai n Output IP3 Output P1dB Input Return Loss Reverse Isolati on 11.8 23.1 11.6 24.6 19.6 dB dB m dB m dB dB 522 Almanor Ave., Sunnyvale, CA 94085 (ID = 60mA, unless otherwise noted) Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spaci ng = 1 MHz, Pout per tone = -10dBm Tone spaci ng = 1 MHz, Pout per tone = -10dBm Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Pin # 1 Function Description GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. GND Same as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Same as Pin 1 GND Same as Pin 1 RF OUT RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of this bias netw ork should be w ell bypassed. 2 3 4 5 6 Device Schematic Application Schematic R ecommended B ias R esistor Values Supply Voltage(Vs) 5V 7.5V 9V 12V Rbi as (Ohms) 27 68 91 140 Cd1 Cd2 R bias Vs Note: A bias resistor is needed for stability over temperature. Lchoke 50 ohm microstrip 50 ohm microstrip 1,2 3 6 Cb1 Cb2 4,5 R eference D esignator Function 500 MH z 850 MH z 1950 MH z 2400 MH z C b1 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C b2 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C d1 D ecoupli ng 1 uF 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier S21 vs. Temperature, ID = 60mA 15 S12 vs. Temperature, ID = 60mA 0 -10 dB dB 10 5 -20 25C -40C 85C 0 0.1 1 1.9 2.8 3.7 4.6 25C -40C 85C -30 5.5 0.1 1 1.9 GHz S11 vs. Temperature, ID = 60mA 0 3.7 4.6 5.5 S22 vs. Temperature, ID = 60mA 0 -10 dB -10 dB 2.8 GHz -20 -30 -30 25C -40C 85C -40 0.1 1 1.9 2.8 3.7 4.6 -20 25C -40C 85C -40 5.5 0.1 1 1.9 GHz IP3 vs. Temperature, ID = 60mA 40 2.8 3.7 4.6 5.5 GHz P1dB vs. Temperature, ID = 60mA 20 15 dBm dBm 30 20 10 25C 10 25C 5 -40C -40C 85C 85C 0 0 0.1 1 1.9 2.8 3.7 0.1 GHz 522 Almanor Ave., Sunnyvale, CA 94085 1 1.9 2.8 3.7 GHz Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101540 Rev A Preliminary Preliminary SGA-5263 DC-4.5 GHz 3.4V SiGe Amplifier Caution: ESD sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 6 5 1 2 R eel Siz e D ev ices/R eel SGA-5263 7" 3000 4 Note: Pin 1 is on lower left when you can read package marking A52 Package Marking Part N umber 3 Package Dimensions Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101540 Rev A