Product Description SLN-186 Stanford Microdevices’ SLN-186 is a high performance gallium arsenide heterojunction bipolar transistor MMIC housed in a low-cost surface mount plastic package. A Darlington configuration is used for broadband performance from DC-4.0 GHz. DC-4.0 GHz, 3.5 Volt 50 Ohm LNA MMIC Amplifier The SLN-186 needs only 2 DC-blocking capacitors and a bias resistor for operation. Noise figure may be optimized by using 2-element matching at the input to yield <2.0dB noise figure. This 50 Ohm LNA requires only a single supply voltage and draws only 8mA. For broadband applications, it may be biased at 6mA with minimal effect on noise figure and gain. The SLN-186 is available in tape and reel at 1000, 3000 and 5000 devices per reel. Product Features • Patented, Reliable GaAs HBT Technology • Low Noise Figure: 2.0dB from 0.1 to 1.5 GHz • High Associated Gain: 22dB Typ. at 2.0 GHz • True 50 Ohm MMIC : No External Matching Required Noise Figure vs. Frequency 3 2.5 6 mA dB Applications • AMPS, PCS, DECT, Handsets • Tri-Band & Broadband Receivers 2 8 mA 1.5 0.1 0.5 1 1.5 2 2.5 3 3.5 4 GHz Electrical Specifications at Ta = 25C S ym b ol P a r a m e t e r s : T e s t C o n d i t io n s NF 50 Ohm N o is e F ig u re in 5 0 O h m s : V d s = 3 .5 V, I d s = 8 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z dB dB 5 0 O h m G a in : V d s = 3 .5 V, I d s = 8 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z dB 5 0 O h m M a t c h (In p u t a n d O u tp u t) : V d s = 3 .5 V, I d s = 8 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z - 1 .8 :1 3 .0 :1 N o is e F ig u re in 5 0 O h m s : V d s = 3 .2 V, I d s = 6 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z dB dB 2 .2 2 .6 5 0 O h m G a in : V d s = 3 .2 V, I d s = 6 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z dB 5 0 O h m M a t c h (In p u t a n d O u tp u t) : V d s = 3 .2 V, I d s = 6 m A f = D C -1 .5 G H z f = 1 . 5 - 4 .0 G H z - 1 .4 :1 2 .5 :1 O u t p u t P o w e r a t 1 d B C o m p re s s io n : f = D C -1 .5 G H z V d = 3 .5 V, Id = 8 m A V d = 3 .2 V, Id = 6 m A dBm dBm -1 0 -1 2 T h ir d O r d e r In t e r c e p t P o in t: f = D C -1 .5 G H z V d = 3 .5 V, Id = 8 m A V d = 3 .2 V, Id = 6 m A dBm +5 +3 S 21 VSW R NF 50 Ohm S 21 VSW R P 1dB IP 3 U n its M in . 19 14 Ty p . M ax. 2 .0 2 .4 2 .4 22 20 2 .5 17 16 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4-9 http://www.stanfordmicro.com Low Noise MMICs • Low Current Draw : Only 8mA • Low Cost Surface Mount Plastic Package SLN-186 DC-4.0 GHz LNA MMIC Amplifier Typical Performance at 25° C (Vds = 3.5V, Ids = 8mA) |S11| vs. Frequency |S21| vs. Frequency 0 30 -5 25 8mA dB dB -10 20 6mA -15 15 10 -20 0.1 0.5 1 1.5 2 2.5 3 3.5 0.1 4 0.5 1 1.5 GHz 0 0 -10 -10 dB -20 3 4 3.5 4 -20 -40 -40 Low Noise MMICs 3.5 -30 -30 0.1 2.5 |S22| vs. Frequency |S12| vs. Frequency dB 2 GHz 0.5 1 1.5 2 2.5 3 3.5 0.1 4 0.5 1 1.5 2 2.5 3 GHz GHz Pout & TOIP vs. Frequency 12 8 TOIP 4 dBm 0 -4 -8 -12 Pout -16 0.1 0.5 1 1.5 2 2.5 3 3.5 4 GHz Typical S-Parameters Vds = 3.5V, Ids = 8mA F re q G H z |S 11 | .1 0 0 0 .0 9 2 .2 5 0 0 .0 6 8 .5 0 0 0 .0 6 7 1 .0 0 0 .1 2 5 1 .5 0 2 .0 0 S 11 A n g |S 2 1 | S21 Ang |S 1 2 | S12 Ang |S 2 2 | S22 Ang 122 11 .6 9 -1 2 .0 8 0 -11 .0 4 4 35 -1 5 4 11 .9 9 -4 .0 5 3 5 .0 8 9 -2 2 -1 5 3 1 2 .3 2 -1 3 .0 4 2 16 .0 9 1 -4 6 -1 6 0 1 3 .0 3 -3 9 .0 4 0 29 .1 2 3 -11 2 0 .2 1 5 152 1 4 .0 7 -7 2 .0 4 8 45 .2 4 5 169 0 .3 0 9 90 1 5 .11 -1 3 8 .0 4 5 31 .3 9 4 86 2 .5 0 0 .4 2 3 36 1 5 .2 0 -1 7 3 .0 5 6 14 .4 2 1 12 3 .0 0 0 .5 1 3 8 1 3 .1 8 152 .0 5 9 14 .4 4 5 -2 6 3 .5 0 0 .5 0 9 -1 4 1 0 .4 7 138 .0 6 1 17 .4 4 4 -5 1 4 .0 0 0 .4 9 1 -2 0 8 .8 9 125 .0 7 5 20 .4 6 8 -7 1 (S-Parameters include the effects of two 1.0 mil diameter bond wires, each 30 mils long, connected to the gate and drain pads on the die) 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4-10 http://www.stanfordmicro.com SLN-186 DC-4.0 GHz LNA MMIC Amplifier Part Number Ordering Information Absolute Maximum Ratings P a r a m ete r D e vic e C urre nt A b s o lu te M a xim u m Part Number Devices Per Reel SLN-186-TR1 1000 Reel Size 7" SLN-186-TR2 3000 13" SLN-186-TR3 5000 13" 50mA Po w e r D issipa tion 4 4 0m W R F In p ut Po w er 1 0 0m W Ju n ction Te m p e ra ture +2 0 0 C O p e ra tin g Te m p e ra tu re -4 5 C to +8 5 C Sto ra g e Te m pe ra tu re -6 5 C to +1 5 0 C Recommended Bias Resistor Values Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. Supply Voltage(Vs) 3.3V 5V 7.5V 9V 12V 15V 20V Rbias (Ohms) @ 8mA * 188 500 688 1063 1438 2063 Rbias (Ohms) @ 6mA * 300 717 967 1467 1967 2800 * Needs active biasing for constant current source Pin Function 1 RF Input 2 Ground 3 RF Output and Bias 4 Ground Typical Biasing Configuration Device Outline 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4-11 http://www.stanfordmicro.com Low Noise MMICs Device Pinout