Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 2150 MHz 1 Watt Power Amplifier with Active Bias This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. Product Features • High Linearity Performance: +47 dBm Typ. OIP3 at 2140 MHz +21.7 dBm W-CDMA Channel Power at -45 dBc ACP VC1 VBIAS Active Bias RFIN RFOUT/ VC2 • On-chip Active Bias Control • High Gain: 23 dB Typ. • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • W-CDMA Systems • Multi-Carrier Applications VPC2 Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, Vcc=5.0V Units Min. Typ. Max. Frequency of Operation MHz 2110 2140 2170 P 1dB Output Power at 1dB Compression dB m 28 S 21 Small Signal Gain dB 23 - 1.5:1 dB m 47 dB 5.0 mA 400 ºC/W 32 Symbol f0 VSWR OIP3 NF Icc Rth j-l Input VSWR Output Third Order Intercept Point Power out per tone = +14dBm Noise Figure Device Current Ibias = 10mA, Ic1 = 70mA, Ic2 = 320 mA Thermal Resistance (junction - lead) The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101432 Rev B Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp 2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency -4 Gain vs. Frequency 30 S22 -10 24 -22 dB dB 27 S11 -16 21 -28 25C -40C 18 -34 -40 2.11 85C S12 2.12 2.13 2.14 2.15 2.16 15 2.11 2.17 2.12 2.13 2.14 2.15 2.16 2.17 GHz Output Third Order Intercept vs. Frequency (POUT per tone = 14dBm) 52 P1dB vs Frequency 30 50 28 dBm dBm 48 25C 85C -40C 26 24 2.11 2.12 2.13 2.14 2.15 2.16 46 44 25C 85C -40C 42 40 2.11 2.17 2.12 2.13 GHz GHz 600 50 500 2.16 2.17 Device Current vs. Source Voltage Device Current (mA) dBm 48 46 44 25C 85C -40C 40 2.15 GHz Output Third Order Intercept vs. Tone Power 2.14GHz 52 42 2.14 38 25C -40C 85C 400 300 200 100 0 10 12 14 16 18 20 0 POUT per tone (dBm) 726 Palomar Ave., Sunnyvale, CA 94085 1 2 3 4 5 6 Vcc (V) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101432 Rev B Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp 2140 MHz Application Circuit Data, Icc=400mA, T=+25C, Vcc=5V The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH Adjacent Channel Power (dBc) W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power -30 -35 -40 -45 Frequency 2140 M H z Small Signal Gain (dB) 23.4 Ch. Pwr. (dBm) @ -45 dBc ACP 21.7 Output IP3 (dBm) 45.4* P1dB (dBm) 29.9 *Note: IP3 performance degraded due to Device being tuned for optimal ACP performance -50 -55 -60 -65 19 20 21 22 23 24 25 Channel Output Power (dBm) W-CDMA at 2.14 GHz 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101432 Rev B Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp 2110 - 2170 MHz Schematic Vcc 10uF Tantalum Z=63 Ω, 23.5 ° 56pF 2.7nH 1000pF 5.6pF 5.6nH 6.8K 1 8 2 7 3 6 4 5 18 nH 300 ohm 1800pF 7 Z=50 Ω, 27.4 ° Z=50 Ω, 13.1 ° 6 5 1.8pF 1.5pF 18 nH 8 39pF 1.8pF Tune for optimal ACP performance Tune for optimal IP3 performance Note: All inductors are Toko LL1608-FS .1uF Tantalum 2110 - 2170 MHz Evaluation Board Layout Vbias Vcc 10uF Tantalum 1000pF 56pF Short 5.6nH 5.6pF 2.7nH 1.5pF 18nH 6.8K Ω 18nH 39pF 1.8pF 1800pF 300 Ω Tune for optimal IP3 performance 1.8pF Tune for optimal ACP performance ECB-101161 Rev. B Note: All inductors are Toko LL1608-FS 726 Palomar Ave., Sunnyvale, CA 94085 .1uF Tantalum Vpc SOIC-8 PA Eval Board Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101432 Rev B Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp Pin # Function Description 1 VC 1 2 V bi as Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. 3 RF In RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. 4 VPC 2 VPC2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. 5, 6, 7, 8 RF Out/VC2 EPAD Gnd VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6). Simplified Device Schematic 4 2 2 ACTIVE BIAS NETW ORK 5-8 1 ACTIVE BIAS NETW ORK 3 Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l Caution: ESD sensitive Parameter Value 150 mA Supply C urrent (VC2) 750 mA D evi ce Voltage (VD) 6.0 V Power D i ssi pati on 4.0 W Operati ng Lead Temperature (TL) RF Input Power Appropriate precautions in handling, packaging and testing devices must be observed. Storage Temperature Range Operati ng Juncti on Temperature (TJ) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 U nit Supply C urrent (VC1) -40 to +85 ºC +40 mW -40 to +150 ºC +150 ºC http://www.stanfordmicro.com EDS-101432 Rev B Preliminary Preliminary SPA-2318 2150 MHz 1 Watt Power Amp Part Number Ordering Information 3 6 Reel Siz e SPA-2318 500 7" EXPOSED PAD .194 [4.93] 2 1 XXXX SPA 2318 5 Devices Per Reel Package Outline Drawing .035 [.889] .045 [1.143] 4 Part Number 7 .155 [3.937] .078 [1.969] .236 [5.994] .061 [1.549] 8 TOP VIEW BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .058 [1.473] .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW END VIEW Recommended Land Pattern PARTING LINE .15 [3.81] .025 .24 [6.22] 5° .16 [4.02] .33 [8.42] DETAIL A Note: XXXX represents the lot code .11 [2.71] .05 [1.27] .02 [.60] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101432 Rev B