Product Description Stanford Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain IP3 P1dB Gain Symbol 2140 MHz 1800-2500 MHz Power Amplifier Product Features • Patented High Reliability GaAs HBT Technology • High Output 3rd Order Intercept : +42 dBm typ. • 45 40 35 30 25 20 15 10 5 0 1960 MHz SXT-289 at 2450 MHz Surface-Mountable Power Plastic Package Applications • PCS Systems • WLL, Wideband CDMA Systems • ISM Systems 2450 MHz Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Units P 1dB Output Power at 1dB Compression f = 1960 MHz f = 2140 MHz f = 2450 MHz dB m dB m dB m S 21 Small signal gain f = 1960 MHz f = 2140 MHz f = 2450 MHz dB dB dB S11 Input VSWR f = 1960 MHz f = 2140 MHz f = 2450 MHz - IP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) f = 1960 MHz f = 2140 MHz f = 2450 MHz dB m dB m dB m NF Noise Figure f = 1960 MHz f = 2140 MHz f = 2450 MHz dB dB dB Device Current V s = 8V Rbias = 27 ohms Vdevice = 5 V typ. mA Id Rth, j-l Thermal Resistance (junction - lead) ° C/W Min. Typ. Max. 23.5 23.5 23.0 13.5 15.0 15.0 13.8 16.6 1.4:1 1.6:1 1.6:1 37.5 41.0 40.0 42.0 4.4 4.5 5.4 85 105 120 108 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101157 Rev D SXT-289 1800-2500 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 26 25C -40C 85C 25C -40C 85C 18 24 dB 16 23 14 22 12 21 1930 0 -5 -10 -15 -20 -25 -30 -35 -40 1930 1940 1950 1960 1970 1980 10 1930 1990 1940 1950 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) S22 S12 1940 1950 1960 1970 40 39 25C -40C 85C 38 1980 37 1930 1990 1940 1950 Third Order Intercept vs Tone Power Device Current (mA) dBm 40 39 25C -40C 85C 37 8 1970 1980 1990 Device Current vs. Source Voltage 41 6 1960 MHz 42 4 1990 41 S11 2 1980 Input/Output Return Loss, Isolation vs Frequency MHz 0 1970 MHz 42 38 1960 MHz dBm dBm 25 dB 20 10 12 14 180 160 140 120 100 80 60 40 20 0 25C -40C 85C 0 .0 16 522 Almanor Ave., Sunnyvale, CA 94085 2 .0 4 .0 6.0 8 .0 10 .0 VS (V) POUT per tone (dBm) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101157 Rev D SXT-289 1800-2500 MHz Power Amplifier 2140 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 Gain vs. Frequency 25 18 24 16 23 14 25C -40C 85C 22 21 2110 dB 25C -40C 85C dB 20 5 0 -5 -10 -15 -20 -25 -30 -35 2110 2120 2130 2140 2150 12 2160 10 2110 2170 2120 2130 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) S11 S22 2130 2140 2150 41 39 37 S12 2120 2160 35 2110 2170 2120 2130 2160 2170 39 37 35 10 12 14 25C -40C 85C Device Current (mA) 41 8 2150 Device Current vs. Source Voltage 180 160 140 120 100 80 60 40 20 0 25C -40C 85C 43 6 2140 MHz Third Order Intercept vs Tone Power 4 2170 25C -40C 85C 43 45 dBm 2160 Input/Output Return Loss, Isolation vs Frequency 45 2 2150 MHz MHz 0 2140 MHz dBm dBm P1dB vs Frequency 26 0 .0 16 4 .0 6 .0 8 .0 1 0 .0 VS (V) POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 2 .0 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101157 Rev D SXT-289 1800-2500 MHz Power Amplifier 2450 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 P1dB vs Frequency Gain vs. Frequency 26 20 25 18 16 dB 23 14 22 25C -40C 85C 21 20 2400 2420 12 2440 2460 2500 2420 2440 2480 MHz Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 46 2500 44 S22 -10 -15 S11 -20 -25 S12 -30 -35 2400 2420 42 40 25C -40C 85C 38 2440 2460 2480 36 2400 2500 2420 2440 Third Order Intercept vs Tone Power 180 160 140 120 100 80 60 40 20 0 42 40 25C -40C 85C 36 2 4 6 8 2500 25C -40C 85C Device Current (mA) 44 0 2480 Device Current vs. Source Voltage 46 38 2460 MHz MHz dBm 2460 MHz 5 0 -5 dB 2480 10 2400 dBm dBm 24 25C -40C 85C 10 12 14 0 .0 16 4 .0 6 .0 8 .0 1 0 .0 VS (V) POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 2 .0 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101157 Rev D 1960 MHz Application Circuit SXT-289 1800-2500 MHz Power Amplifier Note: Circuit tuned for Output IP3 Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Supply Voltage(Vs) Vs Rbias 0.1 µ F (SIZE A) 390 7V 8V 10V 12V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W 18pF Ω Rbias 15 nH 1000pF 180 Ω Z=50 Ω, 8.8 ° 2.7 nH 15 nH 390 Ohms 180 Ohms 0.1uF 1000pF 18pF RFin 39pF 15nH 39pF 15nH 2.7nH 39pF RFout 39pF 1.0pF 0.5pF 0.5 pF Z=50 Ω, 19 ° SXT-289 SXT-289 1.0 pF Z=50 Ω, 13.5 ° STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 1960 MHz Schematic 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 0.1 µ F (SIZE A) 220 Ω 2 6 1 (Rohm) UMZ1N 15.3 Output IP3 (dBm) 39.7* P1dB (dBm) 23.8 22 pF 4.3 1000 pF 1960 MHz Small Signal Gain (dB) *Note: IP3 performance degraded due to lower (4.5V) device voltage. Ω 4 0.1 uF 15 nH 5 220 22pF Ω 4.3 1000pF 1.8K Ω 3 39pF 1.8K Ω UMZ1N Z=50 Ω, 35.5 ° 750 Ω 39pF 39pF 0.5 pF SXT-289 750 1 39pF Ω 0.5p F 1.0 pF Ω 15nH 1.0p F Z=50 Ω, 13.5 ° STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 1960 MHz Schematic NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. 1960 MHz Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101157 Rev D 2140 MHz Application Circuit SXT-289 1800-2500 MHz Power Amplifier Note: Circuit tuned for Output IP3 Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Supply Voltage(Vs) Vs Rbias 0.1 µ F (SIZE A) 390 7V 8V 10V 12V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W 18pF Rbias Ω 15 nH 1000pF 180 Ω 390 Ohms 180 Ohms 0.1uF 1000pF 18pF RFin 15 nH 39pF 39pF Z=50 Ω, 56.7 ° 15nH 15nH 39pF 39pF 1.0pF SXT-289 SXT-289 RFout 1.0 pF STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 2140 MHz Schematic 2140 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 0.1 µ F (SIZE A) 220 Ω 2 6 1 (Rohm) UMZ1N 15.0 Output IP3 (dBm) 39.2* P1dB (dBm) 23.0 22 pF 4.3 1000 pF 2140 MHz Small Signal Gain (dB) *Note: IP3 performance degraded due to lower (4.5V) device voltage. Ω 4 0.1 uF 15 nH 5 220 22pF Ω 4.3 1000pF 1.8K Ω 3 1.8K Ω 39pF UMZ1N 39pF 750 15nH 1 Z=50 Ω, 49.8 ° 750 Ω Ω 39pF Ω 39pF SXT-289 1.0p F 1.0 pF 2140 MHz Schematic NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 2140 MHz Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101157 Rev D 2450 MHz Application Circuit SXT-289 1800-2500 MHz Power Amplifier Note: Circuit tuned for Output IP3 Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) Rbias 0.1 µ F (SIZE A) 390 18pF 7V 8V 10V 12V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W Ω RbiaS 15 nH 1000pF 180 Ω 390 Ohms 180 Ohms 0.1uF 1000pF 18pF RFin 15 nH RFout 39pF Z=50 Ω, 56 ° 39pF 15nH 15nH 39pF 1.0pF 39pF SXT-289 SXT-289 1.0 pF STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 2450 MHz Schematic 2450 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Frequency Vs = 5V 0.1 µ F (SIZE A) 2450 MHz Small Signal Gain (dB) 14.6 Output IP3 (dBm) 39.7* P1dB (dBm) 23.7 22 pF *Note: IP3 performance degraded due to lower (4.5V) device voltage. 220 Ω 4.3 1000 pF 2 6 1 (Rohm) UMZ1N Ω 0.1 uF 4 15 nH 5 220 22pF Ω 4.3 1000pF 1.8K Ω 3 1.8K Ω 39pF 750 Ω UMZ1N 39pF SXT-289 750 15nH 1 Z=50 Ω, 40.9 ° 39pF Ω 39pF Ω 1.0p F 1.0 pF 2450 MHz Schematic STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. 2450 MHz Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-101157 Rev D Absolute Maximum Ratings Parameter Absolute Maximum Device Voltage 6V Device Current 200mA Power Dissipation 1500mW RF Input Power 100mW Part Number Ordering Information Part Number Devices Per Reel Reel Siz e Junction Temperature +150C Operating Temperature -40C to +85C Storage Temperature SXT-289 1800-2500 MHz Power Amplifier SXT-289 1000 7" Part Symbolization The part will be symbolized with a “XA2” designator on the top surface of the package. Pin Description -65C to +150C Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Pin # Function 1 Base 2 GND & Emitter 3 4 Description Base Pin Collector Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin GND & Emitter Same as Pin 2 Package Dimensions .161±.006 .096±.006 .038±.002 .059±.004 .041±.006 .036±.002 .008 .048±.002 .010±.002 TYP(2X) .016REF .010 .118REF .177±.004 .118±.003 .068±.004 .019 +.003 -.002 .059 .059±.003 .034 .016 +.003 -.002 .030±.004 MARKING AREA .105±.002 TOP VIEW DOT DENOTES PIN 1 .117±.002 .041REF +3° 5° -4° .024±.004 .161 REF +.002 .015 -.001 TYP(4X) PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-101157 Rev D